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Author Van Tendeloo, G.; Schryvers, D. openurl 
  Title Atomic structure of alloys close to phase transitions Type A1 Journal article
  Year (up) 2000 Publication Nucleation and growth processes in materials Abbreviated Journal  
  Volume 580 Issue Pages 283-292  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000165506200043 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:48377 Serial 197  
Permanent link to this record
 
 
Author Hervieu, M.; Martin, C.; Van Tendeloo, G.; Mercey, B.; Maignan, A.; Jirak, Z.; Raveau, B. openurl 
  Title Charge ordering and phase transitions in perovskite manganites: correlation with CMR properties Type H3 Book chapter
  Year (up) 2000 Publication Abbreviated Journal  
  Volume Issue Pages 179-182  
  Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication s.l. Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54728 Serial 336  
Permanent link to this record
 
 
Author Vernochet, C.; Vannier, R.-N.; Huvé, M.; Pirovano, C.; Nowogrocki, G.; Mairesse, G.; Van Tendeloo, G. pdf  doi
openurl 
  Title Chemical, structural and electrical characterizations in the BIZNVOX family Type A1 Journal article
  Year (up) 2000 Publication Journal of materials chemistry Abbreviated Journal J Mater Chem  
  Volume 10 Issue 12 Pages 2811-2817  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge Editor  
  Language Wos 000165487800037 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0959-9428;1364-5501; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 13 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54757 Serial 351  
Permanent link to this record
 
 
Author Gordon, I.; Wagner, P.; Das, A.; Vanacken, J.; Moshchalkov, V.V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Ziese, M.; Borghs, G. doi  openurl
  Title Comparative Hall studies in the electron- and hole-doped manganites La0.33Ca0.67MnO3 and La0.70Ca0.30MnO3 Type A1 Journal article
  Year (up) 2000 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 62 Issue 17 Pages 11633-11638  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000165201900064 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 18 Open Access  
  Notes Approved Most recent IF: 3.836; 2000 IF: NA  
  Call Number UA @ lucian @ c:irua:54734 Serial 417  
Permanent link to this record
 
 
Author Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. pdf  openurl
  Title Comparative study of structural properties and photoluminescence in InGaN layers with a high In content Type A1 Journal article
  Year (up) 2000 Publication Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS Abbreviated Journal Mrs Internet J N S R  
  Volume 5 Issue s:[1] Pages art. no.-W11.38  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.  
  Address  
  Corporate Author Thesis  
  Publisher Materials research society Place of Publication Warrendale Editor  
  Language Wos 000090103600097 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1092-5783 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103471 Serial 423  
Permanent link to this record
 
 
Author Willems, I.; Konya, Z.; Colomer, J.F.; Van Tendeloo, G.; Nagaraju, N.; Fonseca, A.; Nagy, J.B. pdf  doi
openurl 
  Title Control of the outer diameter of thin carbon nanotubes synthesized by catalytic decomposition of hydrocarbons Type A1 Journal article
  Year (up) 2000 Publication Chemical physics letters Abbreviated Journal Chem Phys Lett  
  Volume 317 Issue 1-2 Pages 71-76  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Multi-wall carbon nanotubes have been produced by the catalytic decomposition of acetylene. Go-Mo, Co-V and Co-Fe mixtures supported either on zeolite or corundum alumina were used as catalysts. When Fe or V is added to Co, the carbon deposit increases. The nanotubes were characterized by both low and high resolution TEM. From histograms representing the outer diameter distributions, it is clear that the outer diameter of the nanotubes can be controlled by choosing the appropriate catalyst. (C) 2000 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000085128300013 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0009-2614; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.815 Times cited 130 Open Access  
  Notes Approved Most recent IF: 1.815; 2000 IF: 2.364  
  Call Number UA @ lucian @ c:irua:103956 Serial 499  
Permanent link to this record
 
 
Author Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. openurl 
  Title Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study Type P1 Proceeding
  Year (up) 2000 Publication Abbreviated Journal  
  Volume Issue Pages 38-43  
  Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Defects in AgG tabular crystals with {111} surfaces are characterised by transmission electron microscopy (TEM) and their influence on the growth process is discussed. In the tabular crystals, twins parallel to the tabular face as well as dislocations along different directions are observed. The twins induce the tabular growth, while the dislocations do not influence the morphology. In 10 to 30% of the crystals that have been characterised, thickness growth is observed and it is shown that in all cases twins on other planes than the tabular ones are present. Two configurations occur more frequently and are analysed in detail. For the first group, twins parallel to the tabular face as well as a microtwin along a non-parallel {111} plane and ending inside the crystal are present. In the crystals of the second group only one extra non-parallel twin occurs giving rise to a bicrystal built up by a tetrahedral shaped part and a flat triangular or trapezoidal part. More complex twin configurations give rise to various, less characteristic morphologies.  
  Address  
  Corporate Author Thesis  
  Publisher Soc imaging science technology Place of Publication Springfield Editor  
  Language Wos 000183315900012 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-89208-229-1 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:95777 Serial 617  
Permanent link to this record
 
 
Author Lemmens, H.; Czank, M.; Van Tendeloo, G.; Amelinckx, S. pdf  doi
openurl 
  Title Defect structure of the low temperature α-cristobalite phase and the cristobalite <-> tridymite transformation in (Si-Ge)O2 Type A1 Journal article
  Year (up) 2000 Publication Physics and chemistry of minerals Abbreviated Journal Phys Chem Miner  
  Volume 27 Issue 6 Pages 386-397  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000087959700004 Publication Date 2002-10-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0342-1791;1432-2021; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.521 Times cited 5 Open Access  
  Notes Approved Most recent IF: 1.521; 2000 IF: 1.513  
  Call Number UA @ lucian @ c:irua:54725 Serial 622  
Permanent link to this record
 
 
Author Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. pdf  doi
openurl 
  Title Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer Type A1 Journal article
  Year (up) 2000 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 77 Issue 4 Pages 507-509  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000088225400016 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 44 Open Access  
  Notes Approved Most recent IF: 3.411; 2000 IF: 3.906  
  Call Number UA @ lucian @ c:irua:103448 Serial 712  
Permanent link to this record
 
 
Author Dluzewski, P.; Pietraszko, A.; Kozlowski, M.; Szczepanska, A.; Gorecka, J.; Baran, M.; Leonyuk, L.; Babonas, G.J.; Lebedev, O.I.; Szymczak, R. pdf  openurl
  Title Electron microscopy and X-ray structural investigations of incommensurate spin-ladder Sr4.1Ca4.7Bi0.3Cu17O29 single crystals Type A1 Journal article
  Year (up) 2000 Publication Acta physica Polonica: A: general physics, solid state physics, applied physics Abbreviated Journal Acta Phys Pol A  
  Volume 98 Issue 6 Pages 729-737  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Transmission electron microscopy and X-ray diffraction proved chain/ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3 degrees around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Warszawa Editor  
  Language Wos 000166377600007 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0587-4246 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor 0.469 Times cited Open Access  
  Notes Approved Most recent IF: 0.469; 2000 IF: 0.409  
  Call Number UA @ lucian @ c:irua:104226 Serial 951  
Permanent link to this record
 
 
Author Van Tendeloo, G.; Amelinckx, S. openurl 
  Title Electron microscopy of fullerenes and related materials Type H3 Book chapter
  Year (up) 2000 Publication Abbreviated Journal  
  Volume Issue Pages 353-396  
  Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Wiley-VCH Place of Publication Weinheim Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29722 Serial 961  
Permanent link to this record
 
 
Author Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. openurl 
  Title Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization Type A1 Journal article
  Year (up) 2000 Publication Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA Abbreviated Journal Mater Sci Forum  
  Volume 338-3 Issue Pages 309-312  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.  
  Address  
  Corporate Author Thesis  
  Publisher Trans tech publications ltd Place of Publication Zurich-uetikon Editor  
  Language Wos 000165996700075 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0255-5476 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 2 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:104262 Serial 1071  
Permanent link to this record
 
 
Author Yandouzi, M.; Toth, L.; Vasudevan, V.; Cannaerts, M.; van Haesendonck, C.; Schryvers, D. pdf  doi
openurl 
  Title Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer Type A1 Journal article
  Year (up) 2000 Publication Philosophical magazine letters Abbreviated Journal Phil Mag Lett  
  Volume 80 Issue Pages 719-724  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000165158000003 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0950-0839;1362-3036; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.941 Times cited 2 Open Access  
  Notes Approved Most recent IF: 0.941; 2000 IF: 1.504  
  Call Number UA @ lucian @ c:irua:48375 Serial 1072  
Permanent link to this record
 
 
Author Razavi, F.S.; Gross, G.; Habermeier, H.-U.; Lebedev, O.; Amelinckx, S.; Van Tendeloo, G.; Vigliante, A. pdf  doi
openurl 
  Title Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films Type A1 Journal article
  Year (up) 2000 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 76 Issue 2 Pages 155-157  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We are reporting an unexpected metal insulator transition at the ferromagnetic phase-transition temperature for thin films of La0.9Sr0.1MnO3 (< 50 nm), grown on a (100) face of SrTiO3 substrate. For the thicker films (> 50 nm), similar to the single crystal, no such transition is observed below T-C. Additionally, we observe the suppression of the features associated with charge or orbital ordering in intentionally La-deficient thin films of La0.88Sr0.1MnO3 (< 75 nm). In thin films, transmission electron microscopy reveals a compressive strain due to the epitaxial growth, that is, lattice parameters adopt those of the cubic lattice of SrTiO3. As the film thickness increases, coherent microtwinning is observed in the films and the films relax to a orthorhombic structure. (C) 2000 American Institute of Physics. [S0003-6951(00)00402-2].  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000084541000009 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 91 Open Access  
  Notes Approved Most recent IF: 3.411; 2000 IF: 3.906  
  Call Number UA @ lucian @ c:irua:99441 Serial 1073  
Permanent link to this record
 
 
Author Bismayer, U.; Mathes, D.; Oroyo, M.; Bosbach, D.; Putnis, A.; Van Tendeloo, G.; Güttler, B. pdf  doi
openurl 
  Title Ferroelastic domains in lead phosphate-arsenate: an AFM, X-ray diffraction, TEM and raman study Type A1 Journal article
  Year (up) 2000 Publication Phase transitions Abbreviated Journal Phase Transit  
  Volume 71 Issue Pages 243-270  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York Editor  
  Language Wos 000088137000006 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-1594;1029-0338; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.06 Times cited 6 Open Access  
  Notes Approved Most recent IF: 1.06; 2000 IF: NA  
  Call Number UA @ lucian @ c:irua:54723 Serial 1177  
Permanent link to this record
 
 
Author Bismayer, U.; Mathes, D.; Bosbach, D.; Putnis, A.; Van Tendeloo, G.; Novak, J.; Salje, E.K.H. pdf  doi
openurl 
  Title Ferroelastic orientation states and domain walls in lead phosphate type crystals Type A1 Journal article
  Year (up) 2000 Publication Mineralogical magazine Abbreviated Journal Mineral Mag  
  Volume 64 Issue 2 Pages 233-239  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000087015800007 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1471-8022;0026-461X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.285 Times cited 16 Open Access  
  Notes Approved Most recent IF: 1.285; 2000 IF: 1.570  
  Call Number UA @ lucian @ c:irua:54694 Serial 1178  
Permanent link to this record
 
 
Author Abakumov, A.M.; Lebedev, O.I.; Nistor, L.; Van Tendeloo, G.; Amelinckx, S. pdf  doi
openurl 
  Title The ferroelectric phase transition in tridymite type BaAl2O4 studied by electron microscopy Type A1 Journal article
  Year (up) 2000 Publication Phase transitions Abbreviated Journal Phase Transit  
  Volume 71 Issue Pages 143-160  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York Editor  
  Language Wos 000088795800005 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-1594;1029-0338; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.06 Times cited 21 Open Access  
  Notes Approved Most recent IF: 1.06; 2000 IF: NA  
  Call Number UA @ lucian @ c:irua:54724 Serial 1181  
Permanent link to this record
 
 
Author Giorgio, S.; Henry, C.R.; Pauwels, B.; Van Tendeloo, G. openurl 
  Title Gold particles supported on TiO2 Type P3 Proceeding
  Year (up) 2000 Publication Abbreviated Journal  
  Volume Issue Pages 369-370  
  Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication s.l. Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29732 Serial 1358  
Permanent link to this record
 
 
Author Lamoen, D.; March, N.H. doi  openurl
  Title Gradient expansion and beyond for stress tensor and tangential pressure deficit through a planar liquid-vapour interface Type A1 Journal article
  Year (up) 2000 Publication Physics And Chemistry Of Liquids Abbreviated Journal Phys Chem Liq  
  Volume 38 Issue Pages 495-504  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000087986300011 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-9104;1029-0451; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.145 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.145; 2000 IF: 0.267  
  Call Number UA @ lucian @ c:irua:27831 Serial 1362  
Permanent link to this record
 
 
Author Kuhn, L.T.; Vanhoutte, F.; Cannaerts, M.; Neukermans, S.; Verschoren, G.; Bouwen, W.; van Haesendonck, C.; Lievens, P.; Silverans, R.E.; Pauwels, B.; Van Tendeloo, G. openurl 
  Title Granular films assembled of CoN, CrM and mixtures of CoN and CrM clusters: structure and electron transport properties Type P3 Proceeding
  Year (up) 2000 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication s.l. Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29729 Serial 1365  
Permanent link to this record
 
 
Author Lebedev, O.I.; Van Tendeloo, G.; Amelinckx, S.; Ju, H.L.; Krishnan, K.M. pdf  doi
openurl 
  Title High-resolution electron microscopy study of strained epitaxial La0.7Sr0.3MnO3 thin films Type A1 Journal article
  Year (up) 2000 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal Philos Mag A  
  Volume 80 Issue 3 Pages 673-691  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000085873500011 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-8610;1460-6992; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 52 Open Access  
  Notes IUAP 4-10; reprint Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54751 Serial 1456  
Permanent link to this record
 
 
Author Van Tendeloo, G.; Krekels, T. openurl 
  Title Identification of new superconducting compounds by electron microscopy Type H3 Book chapter
  Year (up) 2000 Publication Abbreviated Journal  
  Volume Issue Pages 161-191  
  Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Cambridge University Press Place of Publication Cambridge Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54732 Serial 1547  
Permanent link to this record
 
 
Author Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. url  doi
openurl 
  Title In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures Type A1 Journal article
  Year (up) 2000 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 61 Issue 15 Pages 10336-10345  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000086606200082 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 27 Open Access  
  Notes Conference Name: Microsc. Semicond. Mater. Conf. Approved Most recent IF: 3.836; 2000 IF: NA  
  Call Number UA @ lucian @ c:irua:103456 Serial 1577  
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Author Schuddinck, W.; Van Tendeloo, G.; Martin, C.; Hervieu, M.; Raveau, B. openurl 
  Title Influence of oxygen content on the charge-ordering process in La0.5Ca0.5MnO3 Type H3 Book chapter
  Year (up) 2000 Publication Abbreviated Journal  
  Volume Issue Pages 199-200  
  Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication s.l. Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54727 Serial 1631  
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Author Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. pdf  doi
openurl 
  Title Interaction of a Ti-capped Co thin film with Si3N4 Type A1 Journal article
  Year (up) 2000 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 77 Issue 26 Pages 4307-4309  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7].  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000166120500021 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 3 Open Access  
  Notes Approved Most recent IF: 3.411; 2000 IF: 3.906  
  Call Number UA @ lucian @ c:irua:104225 Serial 1683  
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Author Colomer, J.F.; Stephan, C.; Lefrant, S.; Van Tendeloo, G.; Willems, I.; Konya, Z.; Fonseca, A.; Laurent, C.; Nagy, J.B. pdf  doi
openurl 
  Title Large-scale synthesis of single-wall carbon nanotubes by catalytic chemical vapor deposition (CCVD) method Type A1 Journal article
  Year (up) 2000 Publication Chemical physics letters Abbreviated Journal Chem Phys Lett  
  Volume 317 Issue 1-2 Pages 83-89  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The large-scale production of single-wall carbon nanotubes (SWNTs) is reported. Large quantities of SWNTs can be synthesised by catalytic decomposition of methane over well-dispersed metal particles supported on MgO at 1000 degrees C. The thus produced SWNTs can be separated easily from the support by a simple acidic treatment to obtain a product with high yields (70-80%) of SWNTs. Because the typical synthesis time is 10 min, 1 g of SWNTs can be synthesised per day by this method. The SWNTs are characterized by high-resolution transmission electron microscopy and by Raman spectroscopy, showing the quality and the quantity of products. (C) 2000 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000085128300015 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0009-2614; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.815 Times cited 344 Open Access  
  Notes Approved Most recent IF: 1.815; 2000 IF: 2.364  
  Call Number UA @ lucian @ c:irua:103957 Serial 1782  
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Author Floros, N.; Hervieu, M.; Van Tendeloo, G.; Michel, C.; Maignan, A.; Raveau, B. doi  openurl
  Title The layered manganate Sr4-xBaxMn3O10: synthesis, structural and magnetic properties Type A1 Journal article
  Year (up) 2000 Publication Solid state sciences Abbreviated Journal Solid State Sci  
  Volume 2 Issue 1 Pages 1-9  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000087149500001 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1293-2558; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.811 Times cited 29 Open Access  
  Notes Approved Most recent IF: 1.811; 2000 IF: 0.625  
  Call Number UA @ lucian @ c:irua:54695 Serial 1805  
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Author Pauwels, B.; Van Tendeloo, G.; Bouwen, W.; Kuhn, L.T.; Lievens, P.; Lei, H.; Hou, M. doi  openurl
  Title Low-energy-deposited Au clusters investigated by high-resolution electron microscopy and molecular dynamics simulations Type A1 Journal article
  Year (up) 2000 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 62 Issue 15 Pages 10383-10393  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000089977100084 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 88 Open Access  
  Notes Approved Most recent IF: 3.836; 2000 IF: NA  
  Call Number UA @ lucian @ c:irua:54733 Serial 1849  
Permanent link to this record
 
 
Author Schryvers, D.; Boullay, P.; Potapov, P.; Satto, C. openurl 
  Title Martensitic transformations studied on nano- and microscopic length scales Type A1 Journal article
  Year (up) 2000 Publication Festkörperprobleme Abbreviated Journal  
  Volume 40 Issue Pages 375-387  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Braunschweig Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0430-3393 ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:48376 Serial 1950  
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Author Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H. pdf  doi
openurl 
  Title Microstructural characterization of diamond films deposited on c-BN crystals Type A1 Journal article
  Year (up) 2000 Publication Diamond and related materials T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC Abbreviated Journal Diam Relat Mater  
  Volume 9 Issue 3-6 Pages 269-273  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000087382400009 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.561 Times cited 9 Open Access  
  Notes Approved Most recent IF: 2.561; 2000 IF: 1.591  
  Call Number UA @ lucian @ c:irua:102877 Serial 2041  
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