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Modeling of the sputtering process of cubic silver halide microcrystals and its relevance in depth profiling by secondary ion-mass spectrometry (SIMS)”. Lenaerts J, Verlinden G, Ignatova VA, van Vaeck L, Gijbels R, Geuens I, Fresenius' journal of analytical chemistry 370, 654 (2001). http://doi.org/10.1007/s002160100880
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Ion beam synthesis of Te and Bi nanoclusters in silicon: the effect of post-implantation high frequency electromagnetic field”. Kalitzova M, Peeva A, Ignatova V, Lebedev OI, Zollo G, Vitali G, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms 242, 209 (2006). http://doi.org/10.1016/j.nimb.2005.08.017
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Depth profiling of ZrO2/SiO2/Si stacks : a TOF-SIMS and computer simulation study”. Ignatova VA, Conard T, Möller W, Vandervorst W, Gijbels R, Applied surface science 231/232, 603 (2004). http://doi.org/10.1016/j.apsusc.2004.03.121
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Molecular speciation of inorganic mixtures by Fourier transform laser microprobe mass sepctrometry”. Ignatova VA, van Vaeck L, Gijbels R, Adams F, International journal of mass spectrometry 225, 213 (2003). http://doi.org/10.1016/S1387-3806(02)01116-8
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Dynamic Monte Carlo simulation for reactive sputtering of aluminium”. Chen ZY, Bogaerts A, Depla D, Ignatova V, Nuclear instruments and methods in physics research: B 207, 415 (2003). http://doi.org/10.1016/S0168-583X(03)01120-0
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Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation”. Ignatova VA, Lebedev OI, Wätjen U, van Vaeck L, van Landuyt J, Gijbels R, Adams F, Microchimica acta 139, 77 (2002). http://doi.org/10.1007/s006040200043
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Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions”. Ignatova VA, Lebedev OI, Watjen U, van Vaeck L, van Landuyt J, Gijbels R, Adams F, Journal of applied physics 92, 4336 (2002). http://doi.org/10.1063/1.1508425
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Interpretation of TOF-SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation”. Ignatova VA, Möller W, Conard T, Vandervorst W, Gijbels R, Applied physics A : materials science &, processing 81, 71 (2005). http://doi.org/10.1007/s00339-005-3239-8
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Effect of high-frequency electromagnetic field on Te+-implanted (001) Si</tex>”. Kalitzova M, Vlakhov E, Marinov Y, Gesheva K, Ignatova VA, Lebedev O, Muntele C, Gijbels R, Vacuum: the international journal and abstracting service for vacuum science and technology 76, 325 (2004). http://doi.org/10.1016/j.vacuum.2004.07.055
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Capabilities and limitations of Fourier transform laser microprobe mass spectrometry for molecular analysis of solids”. Ignatova VA, van Vaeck L, Gijbels R, Adams F, Vacuum 69, 307 (2002). http://doi.org/10.1016/S0042-207X(02)00350-0
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Modeling of the target surface modification by reactive ion implantation during magnetron sputtering”. Depla D, Chen ZY, Bogaerts A, Ignatova V, de Gryse R, Gijbels R, Journal of vacuum science and technology: A: vacuum surfaces and films 22, 1524 (2004). http://doi.org/10.1116/1.1705641
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