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“High throughput first-principles calculations of bixbyite oxides for TCO applications”. Sarmadian N, Saniz R, Partoens B, Lamoen D, Volety K, Huyberechts G, Paul J, Physical chemistry, chemical physics 16, 17724 (2014). http://doi.org/10.1039/c4cp02788d
Abstract: We present a high-throughput computing scheme based on density functional theory (DFT) to generate a class of oxides and screen them with the aim of identifying those that might be electronically appropriate for transparent conducting oxide (TCO) applications. The screening criteria used are a minimum band gap to ensure sufficient transparency, a band edge alignment consistent with easy n- or p-type dopability, and a minimum thermodynamic phase stability to be experimentally synthesizable. Following this scheme we screened 23 binary and 1518 ternary bixbyite oxides in order to identify promising candidates, which can then be a subject of an in-depth study. The results for the known TCOs are in good agreement with the reported data in the literature. We suggest a list of several new potential TCOs, including both n- and p-type compounds.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 23
DOI: 10.1039/c4cp02788d
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“Native point defects in CuIn1-xGaxSe2 : hybrid density functional calculations predict the origin of p- and n-type conductivity”. Bekaert J, Saniz R, Partoens B, Lamoen D, Physical chemistry, chemical physics 16, 22299 (2014). http://doi.org/10.1039/c4cp02870h
Abstract: We have performed a first-principles study of the p- and n-type conductivity in CuIn1−xGaxSe2 due to native point defects, based on the HSE06 hybrid functional. Band alignment shows that the band gap becomes larger with x due to the increasing conduction band minimum, rendering it hard to establish n-type conductivity in CuGaSe2. From the defect formation energies, we find that In/GaCu is a shallow donor, while VCu, VIn/Ga and CuIn/Ga act as shallow acceptors. Using the total charge neutrality of ionized defects and intrinsic charge carriers to determine the Fermi level, we show that under In-rich growth conditions InCu causes strongly n-type conductivity in CuInSe2. Under increasingly In-poor growth conditions, the conductivity type in CuInSe2 alters to p-type and compensation of the acceptors by InCu reduces, as also observed in photoluminescence experiments. In CuGaSe2, the native acceptors pin the Fermi level far away from the conduction band minimum, thus inhibiting n-type conductivity. On the other hand, CuGaSe2 shows strong p-type conductivity under a wide range of Ga-poor growth conditions. Maximal p-type conductivity in CuIn1−xGaxSe2 is reached under In/Ga-poor growth conditions, in agreement with charge concentration measurements on samples with In/Ga-poor stoichiometry, and is primarily due to the dominant acceptor CuIn/Ga.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 43
DOI: 10.1039/c4cp02870h
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“The origin of p-type conductivity in ZnM2O4 (M = Co, Rh, Ir) spinels”. Amini MN, Dixit H, Saniz R, Lamoen D, Partoens B, Physical chemistry, chemical physics 16, 2588 (2014). http://doi.org/10.1039/c3cp53926a
Abstract: ZnM2O4 (M = Co, Rh, Ir) spinels are considered as a class of potential p-type transparent conducting oxides (TCOs). We report the formation energy of acceptor-like defects using first principles calculations with an advanced hybrid exchange-correlation functional (HSE06) within density functional theory (DFT). Due to the discrepancies between the theoretically obtained band gaps with this hybrid functional and the – scattered – experimental results, we also perform GW calculations to support the validity of the description of these spinels with the HSE06 functional. The considered defects are the cation vacancy and antisite defects, which are supposed to be the leading source of disorder in the spinel structures. We also discuss the band alignments in these spinels. The calculated formation energies indicate that the antisite defects ZnM (Zn replacing M, M = Co, Rh, Ir) and VZn act as shallow acceptors in ZnCo2O4, ZnRh2O4 and ZnIr2O4, which explains the experimentally observed p-type conductivity in those systems. Moreover, our systematic study indicates that the ZnIr antisite defect has the lowest formation energy in the group and it corroborates the highest p-type conductivity reported for ZnIr2O4 among the group of ZnM2O4 spinels. To gain further insight into factors affecting the p-type conductivity, we have also investigated the formation of localized small polarons by calculating the self-trapping energy of the holes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 47
DOI: 10.1039/c3cp53926a
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“A quantum Monte Carlo study on electron correlation in all-metal aromatic clusters MAl4 –, (M = Li, Na, K, Rb, Cu, Ag and Au)”. Brito BGA, Hai G-Q, Teixeira Rabelo JN, Cândido L, Physical chemistry, chemical physics 16, 8639 (2014). http://doi.org/10.1039/c4cp00416g
Abstract: Using fixed-node diffusion quantum Monte Carlo (FN-DMC) simulation we investigate the electron correlation in all-metal aromatic clusters MAl4- (with M = Li, Na, K, Rb, Cu, Ag and Au). The electron detachment energies and electron affinities of the clusters are obtained. The vertical electron detachment energies obtained from the FN-DMC calculations are in very good agreement with the available experimental results. Calculations are also performed within the Hartree-Fock approximation, density-functional theory (DFT), and the couple-cluster (CCSD(T)) method. From the obtained results, we analyse the impact of the electron correlation effects in these bimetallic clusters and find that the correlation of the valence electrons contributes significantly to the detachment energies and electron affinities, varying between 20% and 50% of their total values. Furthermore, we discuss the electron correlation effects on the stability of the clusters as well as the accuracy of the DFT and CCSD(T) calculations in the present systems.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 10
DOI: 10.1039/c4cp00416g
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“ZnN and ZnP as novel graphene-like materials with high Li-ion storage capacities”. Mortazavi B, Bafekry A, Shahrokhi M, Rabczuk T, Zhuang X, Materials today energy 16, Unsp 100392 (2020). http://doi.org/10.1016/J.MTENER.2020.100392
Abstract: In this work, we employed first-principles density functional theory (DFT) calculations to investigate the dynamical and thermal stability of graphene-like ZnX (X = N, P, As) nanosheets. We moreover analyzed the electronic, mechanical and optical properties of these novel two-dimensional (2D) systems. Acquired phonon dispersion relations reveal the absence of imaginary frequencies and thus confirming the dynamical stability of predicted monolayers. According to ab-initio molecular dynamics results however only ZnN and ZnP exhibit the required thermally stability. The elastic modulus of ZnN, ZnP and ZnAs are estimated to be 31, 21 and 17 N/m, respectively, and the corresponding tensile strengths values are 6.0, 4.9 and 4.0 N/m, respectively. Electronic band structure analysis confirms the metallic electronic character for the predicted monolayers. Results for the optical characteristics also indicate a reflectivity of 100% at extremely low energy levels, which is desirable for photonic and optoelectronic applications. According to our results, graphene-like ZnN and ZnP nanosheets can yield high capacities of 675 and 556 mAh/g for Li-ion storage, respectively. Acquired results confirm the stability and acceptable strength of ZnN and ZnP nanosheets and highlight their attractive application prospects in optical and energy storage systems.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 9.3
Times cited: 13
DOI: 10.1016/J.MTENER.2020.100392
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“Optimization of tungsten beta-phase window for spin-orbit-torque magnetic random-access memory”. Sethu KKV, Ghosh S, Couet S, Swerts J, Sorée B, De Boeck J, Kar GS, Garello K, Physical Review Applied 16, 064009 (2021). http://doi.org/10.1103/PHYSREVAPPLIED.16.064009
Abstract: Switching induced by spin-orbit torque (SOT) is being vigorously explored, as it allows the control of magnetization using an in-plane current, which enables a three-terminal magnetic-tunnel-junction geometry with isolated read and write paths. This significantly improves the device endurance and the read stability, and allows reliable subnanosecond switching. Tungsten in the beta phase, beta-W, has the largest reported antidamping SOT charge-to-spin conversion ratio (theta(AD) approximate to -60%) for heavy metals. However, beta-W has a limitation when one is aiming for reliable technology integration: the beta phase is limited to a thickness of a few nanometers and enters the alpha phase above 4 nm in our samples when industry-relevant deposition tools are used. Here, we report our approach to extending the range of beta-W, while simultaneously improving the SOT efficiency by introducing N and O doping of W. Resistivity and XRD measurements confirm the extension of the beta phase from 4 nm to more than 10 nm, and transport characterization shows an effective SOT efficiency larger than -44.4% (reaching approximately -60% for the bulk contribution). In addition, we demonstrate the possibility of controlling and enhancing the perpendicular magnetic anisotropy of a storage layer (Co-Fe-B). Further, we integrate the optimized W(O, N) into SOT magnetic random-access memory (SOT-MRAM) devices and project that, for the same thickness of SOT material, the switching current decreases by 25% in optimized W(O, N) compared with our standard W. Our results open the path to using and further optimizing W for integration of SOT-MRAM technology.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.808
DOI: 10.1103/PHYSREVAPPLIED.16.064009
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“Tailoring dirac plasmons via anisotropic dielectric environment by design”. Tao ZH, Dong HM, Milošević, MV, Peeters FM, Van Duppen B, Physical Review Applied 16, 054030 (2021). http://doi.org/10.1103/PHYSREVAPPLIED.16.054030
Abstract: Dirac plasmons in a two-dimensional (2D) crystal are strongly affected by the dielectric properties of the environment, due to interaction of their electric field lines with the surrounding medium. Using graphene as a 2D reservoir of free carriers, one can engineer a material configuration that provides an anisotropic environment to the plasmons. In this work, we discuss the physical properties of Dirac plasmons in graphene surrounded by an arbitrary anisotropic dielectric and exemplify how h-BN-based heterostructures can be designed to bear the required anisotropic characteristics. We calculate how dielec-tric anisotropy impacts the spatial propagation of the plasmons and find that an anisotropy-induced plasmon mode emerges, together with a damping pathway, that stem from the out-of-plane off-diagonal elements in the dielectric tensor. Furthermore, we find that one can create hyperbolic plasmons by inher-iting the dielectric hyperbolicity of the designed material environment. Strong control over plasmon propagation patterns can be realized in a similar manner. Finally, we show that in this way one can also control the polarization of the light-matter excitations that constitute the plasmon. Taken together, our results promote the design of the dielectric environment as an effective path to tailor the plasmonic response of graphene on the nanoscopic level.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.808
Times cited: 1
DOI: 10.1103/PHYSREVAPPLIED.16.054030
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“Current fluctuations in boundary driven diffusive systems in different dimensions : a numerical study”. Becker T, Nelissen K, Cleuren B, New journal of physics 17, 055023 (2015). http://doi.org/10.1088/1367-2630/17/5/055023
Abstract: We use kinetic Monte Carlo simulations to investigate current fluctuations in boundary driven generalized exclusion processes, in different dimensions. Simulation results are in full agreement with predictions based on the additivity principle and the macroscopic fluctuation theory. The current statistics are independent of the shape of the contacts with the reservoirs, provided they are macroscopic in size. In general, the current distribution depends on the spatial dimension. For the special cases of the symmetric simple exclusion process and the zero-range process, the current statistics are the same for all spatial dimensions.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.786
Times cited: 5
DOI: 10.1088/1367-2630/17/5/055023
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“Electric quadrupole interactions and the γ-&alpha, phase transition in Ce: the role of conduction electrons”. Nikolaev AV, Michel KH, European physical journal : B : condensed matter and complex systems 17, 15 (2000). http://doi.org/10.1007/s100510070156
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.461
Times cited: 8
DOI: 10.1007/s100510070156
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“Multiply connected mesoscopic superconductors”. Baelus BJ, Peeters FM, Modern physics letters B
T2 –, 3rd International Conference on Modern Problems in Superconductivity, SEP 09-14, 2002, YALTA, UKRAINE 17, 527 (2003). http://doi.org/10.1142/S021798490300555X
Abstract: Multiply connected mesoscopic: superconductors are considered within the framework of the nonlinear Ginzburg-Landau theory. The two coupled nonlinear equations are solved numerically and we investigated the properties of a superconducting ring, two concentric rings, and an asymmetric ring. We find that (i) for a mesoscopic superconducting ring the flux through the hole is not quantized, (ii) two concentric mesoscopic superconducting rings are magnetically coupled and the interaction energy increases with increasing sample thickness, and (iii) in asymmetric rings, a stationary phase slip state is predicted.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 0.617
DOI: 10.1142/S021798490300555X
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“Realization of a p-n junction in a single layer boron-phosphide”. Çakir D, Kecik D, Sahin H, Durgun E, Peeters FM, Physical chemistry, chemical physics 17, 13013 (2015). http://doi.org/10.1039/c5cp00414d
Abstract: Two-dimensional (2D) materials have attracted growing interest due to their potential use in the next generation of nanoelectronic and optoelectronic applications. On the basis of first-principles calculations based on density functional theory, we first investigate the electronic and mechanical properties of single layer boron phosphide (h-BP). Our calculations show that h-BP is a mechanically stable 2D material with a direct band gap of 0.9 eV at the K-point, promising for both electronic and optoelectronic applications. We next investigate the electron transport properties of a p-n junction constructed from single layer boron phosphide (h-BP) using the non-equilibrium Green's function formalism. The n-and p-type doping of BP are achieved by substitutional doping of B with C and P with Si, respectively. C(Si) substitutional doping creates donor (acceptor) states close to the conduction (valence) band edge of BP, which are essential to construct an efficient p-n junction. By modifying the structure and doping concentration, it is possible to tune the electronic and transport properties of the p-n junction which exhibits not only diode characteristics with a large current rectification but also negative differential resistance (NDR). The degree of NDR can be easily tuned via device engineering.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 104
DOI: 10.1039/c5cp00414d
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“The application of laser beam diffraction and scattering methods in the measurement of shape and determination of material parameters”. Sreckovic MZ, Tomic E, Ostojic SM, Ilic JT, Bundaleski N, Sekulic RS, Mlinar V, Lasers in Engineering (Old City Publishing) 17, 179 (2007)
Abstract: Lasers can be used for many applications including determination of size, in addition to the theory of diffraction and material dispersion phenomena. In this paper we calculated the corrections in angular intensity for the Gaussian and uniform particle distributions, the scattering intensity on cylindrical objects. We also evaluated the necessary mathematical summations. In addition, we analyse and Simulate the special positions of detectors using laser Doppler anemometric (LDA) methods, which can be used to determine the particle diameter. The dispersion measurements for actual fibres are given at the end. The geometric and material parameters of these fibres were taken before the evaluation of the angular scattering intensity.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 0.214
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“The role of the VZn-NO-H complex in the p-type conductivity in ZnO”. Amini MN, Saniz R, Lamoen D, Partoens B, Physical chemistry, chemical physics 17, 5485 (2015). http://doi.org/10.1039/c4cp05894a
Abstract: Past research efforts aiming at obtaining stable p-type ZnO have been based on complexes involving nitrogen doping. A recent experiment by (J. G. Reynolds et al., Appl. Phys. Lett., 2013, 102, 152114) demonstrated a significant ([similar]1018 cm−3) p-type behavior in N-doped ZnO films after appropriate annealing. The p-type conductivity was attributed to a VZnNOH shallow acceptor complex, formed by a Zn vacancy (VZn), N substituting O (NO), and H interstitial (Hi). We present here a first-principles hybrid functional study of this complex compared to the one without hydrogen. Our results confirm that the VZnNOH complex acts as an acceptor in ZnO. We find that H plays an important role, because it lowers the formation energy of the complex with respect to VZnNO, a complex known to exhibit (unstable) p-type behavior. However, this additional H atom also occupies the hole level at the origin of the shallow behavior of VZnNO, leaving only two states empty higher in the band gap and making the VZnNOH complex a deep acceptor. Therefore, we conclude that the cause of the observed p-type conductivity in experiment is not the presence of the VZnNOH complex, but probably the formation of the VZnNO complex during the annealing process.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 20
DOI: 10.1039/c4cp05894a
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“The Split-operator technique for the study of spinorial wavepacket dynamics”. Chaves A, Farias GA, Peeters FM, Ferreira R, Communications in computational physics 17, 850 (2015). http://doi.org/10.4208/cicp.110914.281014a
Abstract: The split-operator technique for wave packet propagation in quantum systems is expanded here to the case of propagatingwave functions describing Schrodinger particles, namely, charge carriers in semiconductor nanostructures within the effective mass approximation, in the presence of Zeeman effect, as well as of Rashba and Dresselhaus spin-orbit interactions. We also demonstrate that simple modifications to the expanded technique allow us to calculate the time evolution of wave packets describing Dirac particles, which are relevant for the study of transport properties in graphene.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.004
Times cited: 24
DOI: 10.4208/cicp.110914.281014a
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“A three-dimensional model for artificial atoms and molecules: influence of substrate orientation and magnetic field dependence”. Mlinar V, Peeters FM, Journal of materials chemistry 17, 3687 (2007). http://doi.org/10.1039/b701231d
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Times cited: 7
DOI: 10.1039/b701231d
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“Fluorographane : a promising material for bipolar doping of MoS2”. Çakir D, Peeters FM, Physical chemistry, chemical physics 17, 27636 (2015). http://doi.org/10.1039/c5cp04438c
Abstract: Using first principles calculations we investigate the structural and electronic properties of interfaces between fluorographane and MoS2. Unsymmetrical functionalization of graphene with H and F results in an intrinsic dipole moment perpendicular to the plane of the buckled graphene skeleton. Depending on the orientation of this dipole moment, the electronic properties of a physically absorbed MoS2 monolayer can be switched from n-to p-type or vice versa. We show that one can realize vanishing n-type/p-type Schottky barrier heights when contacting MoS2 to fluorographane. By applying a perpendicular electric field, the size of the Schottky barrier and the degree of doping can be tuned. Our calculations indicate that a fluorographane monolayer is a promising candidate for bipolar doping of MoS2, which is vital in the design of novel technological applications based on two-dimensional materials.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 7
DOI: 10.1039/c5cp04438c
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“Mechanical properties of monolayer sulphides : a comparative study between MoS2, HfS2 and TiS3”. Kang J, Sahin H, Peeters FM, Physical chemistry, chemical physics 17, 27742 (2015). http://doi.org/10.1039/c5cp04576b
Abstract: The in-plane stiffness (C), Poisson's ratio (nu), Young's modulus and ultimate strength (sigma) along two different crystallographic orientations are calculated for the single layer crystals: MoS2, HfS2 and TiS3 in 1H, 1T and monoclinic phases. We find that MoS2 and HfS2 have isotropic in-plane stiffnesses of 124.24 N m(-1) and 79.86 N m(-1), respectively. While for TiS3 the in-plane stiffness is highly anisotropic due to its monoclinic structure, with C-x = 83.33 N m(-1) and C-y = 133.56 N m(-1) (x and y are parallel to its longer and shorter in-plane lattice vectors.). HfS2 which is in the 1T phase has the smallest anisotropy in its ultimate strength, whereas TiS3 in the monoclinic phase has the largest. Along the armchair direction MoS2 has the largest sigma of 23.48 GPa, whereas along y TiS3 has the largest sigma of 18.32 GPa. We have further analyzed the band gap response of these materials under uniaxial tensile strain, and find that they exhibit different behavior. Along both armchair and zigzag directions, the band gap of MoS2 (HfS2) decreases (increases) as strain increases, and the response is almost isotropic. For TiS3, the band gap decreases when strain is along x, while if strain is along y, the band gap increases first and then decreases beyond a threshold strain value. The different characteristics observed in these sulphides with different structures shed light on the relationship between the structure and properties, which is useful for applications in nanotechnology.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 83
DOI: 10.1039/c5cp04576b
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“Quantum-Transport Characteristics of a p-n Junction on Single-Layer TiS3”. Iyikanat F, Senger RT, Peeters FM, Sahin H, ChemPhysChem : a European journal of chemical physics and physical chemistry 17, 3985 (2016). http://doi.org/10.1002/CPHC.201600751
Abstract: By using density functional theory and non-equilibrium Green's function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p-n junction. We constructed a lateral p-n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p-n junction. In addition, the spin-dependent current-volt-age characteristics of the constructed TiS3 p-n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p-n junction. These prominent conduction properties of the TiS3 p-n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.075
Times cited: 12
DOI: 10.1002/CPHC.201600751
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“Black phosphorus as tunable Van der Waals quantum wells with high optical quality”. Zhang G, Huang S, Chaves A, Yan H, ACS nano 17, 6073 (2023). http://doi.org/10.1021/ACSNANO.3C00904
Abstract: Van der Waals quantum wells, naturally formed in two-dimensional layered materials with nanoscale thickness, possess many inherent advantages over conventional molecular beam epitaxy grown counterparts, and could bring up intriguing physics and applications. However, optical transitions originated from the series of quantized states in these emerging quantum wells are still elusive. Here, we show that multilayer black phosphorus appears to be an excellent candidate for van der Waals quantum wells with well-defined subbands and high optical quality. Using infrared absorption spectroscopy, we probe subband structures of multilayer black phosphorus with tens of atomic layers, revealing clear signatures for optical transitions with subband index as high as 10, far from what was attainable previously. Surprisingly, in addition to allowed transitions, an unexpected series of “forbidden” transitions is also evidently observed, which enables us to determine energy spacings separately for conduction and valence subbands. Furthermore, the linear tunability of subband spacings by temperature and strain is demonstrated. Our results are expected to facilitate potential applications for infrared optoelectronics based on tunable van der Waals quantum wells.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 17.1
DOI: 10.1021/ACSNANO.3C00904
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“Dynamic spectral cues do not affect human sound localization during small head movements”. McLachlan G, Majdak P, Reijniers J, Mihocic M, Peremans H, Frontiers in neuroscience 17, 1027827 (2023). http://doi.org/10.3389/FNINS.2023.1027827
Abstract: Natural listening involves a constant deployment of small head movement. Spatial listening is facilitated by head movements, especially when resolving front-back confusions, an otherwise common issue during sound localization under head-still conditions. The present study investigated which acoustic cues are utilized by human listeners to localize sounds using small head movements (below ±10° around the center). Seven normal-hearing subjects participated in a sound localization experiment in a virtual reality environment. Four acoustic cue stimulus conditions were presented (full spectrum, flattened spectrum, frozen spectrum, free-field) under three movement conditions (no movement, head rotations over the yaw axis and over the pitch axis). Localization performance was assessed using three metrics: lateral and polar precision error and front-back confusion rate. Analysis through mixed-effects models showed that even small yaw rotations provide a remarkable decrease in front-back confusion rate, whereas pitch rotations did not show much of an effect. Furthermore, MSS cues improved localization performance even in the presence of dITD cues. However, performance was similar between stimuli with and without dMSS cues. This indicates that human listeners utilize the MSS cues before the head moves, but do not rely on dMSS cues to localize sounds when utilizing small head movements.
Keywords: A1 Journal article; Psychology; Condensed Matter Theory (CMT); Engineering Management (ENM)
DOI: 10.3389/FNINS.2023.1027827
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“Dispersion relations for circular single and double dusty plasma chains”. Tkachenko DV, Sheridan TE, Misko VR, Physics of plasmas 18, 103709 (2011). http://doi.org/10.1063/1.3651194
Abstract: We derive dispersion relations for a system of identical particles confined in a two-dimensional annular harmonic well and which interact through a Yukawa potential, e.g., a dusty plasma ring. When the particles are in a single chain (i.e., a one-dimensional ring), we find a longitudinal acoustic mode and a transverse optical mode which show approximate agreement with the dispersion relation for a straight configuration for large radii of the ring. When the radius decreases, the dispersion relations modify: there appears an anticrossing of the modes near the crossing point resulting in a frequency gap between the lower and upper branches of the modified dispersion relations. For the double chain (i.e., a two-dimensional zigzag configuration), the dispersion relation has four branches: longitudinal acoustic and optical and transverse acoustic and optical.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.115
Times cited: 7
DOI: 10.1063/1.3651194
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“Electron-vortex interaction in a quantum dot”. Tavernier MB, Anisimovas E, Peeters FM, International journal of modern physics: B: condensed matter physics, statistical physics, applied physics
T2 –, 16th International Conference on High Magnetic Fields in Semiconductor, Physics, AUG 02-06, 2004, Florida State Univ, NHMFL, Tallahassee, FL 18, 3633 (2004). http://doi.org/10.1142/S0217979204027177
Abstract: Small numbers N < 5 of two-dimensional Coulomb-interacting electrons trapped in a parabolic potential placed in a perpendicular magnetic field are investigated. The reduced wave function of this system, which is obtained by fixing the positions of N-1 electrons, exhibits strong correlations between the electrons and the zeros. These zeros axe often called vortices. An exact-diagonalization scheme is used to obtain the wave functions and the results are compared with results obtained from the recently proposed rotating electron molecule (REM) theory. We find that the vortices gather around the fixed electrons and repel each other, which is to a much lesser extend so for the REM results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 0.736
DOI: 10.1142/S0217979204027177
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“Exciton states in cylindrical nanowires”. Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Journal of physics : condensed matter 18, 3951 (2006). http://doi.org/10.1088/0953-8984/18/16/005
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 27
DOI: 10.1088/0953-8984/18/16/005
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“Influence of spin-orbit interaction on the magnetotransport of a periodically modulated two-dimensional electron gas”. Wang XF, Vasilopoulos P, Peeters FM, International journal of modern physics: B: condensed matter physics, statistical physics, applied physics
T2 –, 16th International Conference on High Magnetic Fields in Semiconductor, Physics, AUG 02-06, 2004, Florida State Univ, NHMFL, Tallahassee, FL 18, 3653 (2004). http://doi.org/10.1142/S0217979204027220
Abstract: Transport properties of a two-dimensional electron gas (2DEG) are studied in the presence of a normal magnetic field B, of a weak one-dimensional (1D) periodic potential modulation V(x) = V(0)cos(Kx), and of the Rashba spin-orbit interaction (SOI) of strength a. For V(x) = 0 the SOI mixes the up and down spin states of neighboring Landau levels into two, unequally spaced energy branches. For V(x) not equal 0 these levels broaden into bands and their bandwidths oscillate with B. The n-th level bandwidth of each series vanishes at different values of B. Relative to the ID-modulated 2DEG without SOI and one flat-band condition, there are two flat-band conditions that depend on a and the transport coefficients can change considerably. For weak a the Weiss oscillations show beating patterns while for strong a the Shubnikov-de Haas ones axe split in two.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 0.736
DOI: 10.1142/S0217979204027220
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“Magnetoconductance through a chain of rings in the presence of spin-orbit interaction”. Vasilopoulos P, Molnar B, Peeters FM, International journal of modern physics: B: condensed matter physics, statistical physics, applied physics 18, 3661 (2004). http://doi.org/10.1142/S0217979204027244
Abstract: Ballistic electron transport through a finite chain of quantum circular rings is studied in the presence of the Rashba coupling, of strength a, and of a perpendicular magnetic field B. The transmission and reflection coefficients for a single ring, obtained analytically, help obtain the conductance through a chain of rings as a function of the strength a, the field B, and of the wave vector k of the incident electron. Due to destructive spin interferences caused by the Rashba coupling the chain can be totally opaque for certain ranges of k the width of which depends on values of a and B. Outside these ranges the conductance oscillates with high values between e(2)/h and 2e(2)/h. The effect of a periodic modulation of a or B on the conductance gaps is investigated. A periodic, square-wave conductance pattern, pertinent to the development of the spin transistor, results within wide stripes in the parameter space spanned by k, a, and B. Finite temperatures smoothen the square-wave profile of the conductance but do not alter its periodic character.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 0.736
Times cited: 2
DOI: 10.1142/S0217979204027244
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“Melting of a two-dimensional binary cluster of charged particles confined in a parabolic trap”. Ferreira WP, Munarin FF, Farias GA, Peeters FM;, Journal of physics : condensed matter 18, 9385 (2006). http://doi.org/10.1088/0953-8984/18/41/006
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 12
DOI: 10.1088/0953-8984/18/41/006
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“Vortex states in mescopic superconductors”. Peeters FM, Baelus BJ, Milošević, MV, Physica. E: Low-dimensional systems and nanostructures 18, 312 (2003). http://doi.org/10.1016/S1386-9477(02)01058-5
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 1
DOI: 10.1016/S1386-9477(02)01058-5
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“First-principles analysis of the spectroscopic limited maximum efficiency of photovoltaic absorber layers for CuAu-like chalcogenides and silicon”. Bercx M, Sarmadian N, Saniz R, Partoens B, Lamoen D, Physical chemistry, chemical physics 18, 20542 (2016). http://doi.org/10.1039/c6cp03468c
Abstract: Chalcopyrite semiconductors are of considerable interest for application as absorber layers in thin-film photovoltaic cells. When growing films of these compounds, however, they are often found to contain CuAu-like domains, a metastable phase of chalcopyrite. It has been reported that for CuInS2, the presence of the CuAu-like phase improves the short circuit current of the chalcopyrite-based photovoltaic cell. We investigate the thermodynamic stability of both phases for a selected list of I-III-VI2 materials using a first-principles density functional theory approach. For the CuIn-VI2 compounds, the difference in formation energy between the chalcopyrite and CuAu-like phase is found to be close to 2 meV per atom, indicating a high likelihood of the presence of CuAu-like domains. Next, we calculate the spectroscopic limited maximum efficiency (SLME) of the CuAu-like phase and compare the results with those of the corresponding chalcopyrite phase. We identify several candidates with a high efficiency, such as CuAu-like CuInS2, for which we obtain an SLME of 29% at a thickness of 500 nm. We observe that the SLME can have values above the Shockley-Queisser (SQ) limit, and show that this can occur because the SQ limit assumes the absorptivity to be a step function, thus overestimating the radiative recombination in the detailed balance approach. This means that it is possible to find higher theoretical efficiencies within this framework simply by calculating the J-V characteristic with an absorption spectrum. Finally, we expand our SLME analysis to indirect band gap absorbers by studying silicon, and find that the SLME quickly overestimates the reverse saturation current of indirect band gap materials, drastically lowering their calculated efficiency.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 34
DOI: 10.1039/c6cp03468c
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“A first-principles study of stable few-layer penta-silicene”. Aierken Y, Leenaerts O, Peeters FM, Physical chemistry, chemical physics 18, 18486 (2016). http://doi.org/10.1039/c6cp03200a
Abstract: Recently penta-graphene was proposed as a stable two-dimensional carbon allotrope consisting of a single layer of interconnected carbon pentagons [Zhang et al., PNAS, 2015, 112, 2372]. Its silicon counterpart, penta-silicene, however, is not stable. In this work, we show that multilayers of penta-silicene form stable materials with semiconducting or metallic properties, depending on the stacking mode. We demonstrate their dynamic stability through their phonon spectrum and using molecular dynamics. A particular type of bilayer penta-silicene is found to have lower energy than all of the known hexagonal silicene bilayers and forms therefore the most stable bilayer silicon material predicted so far. The electronic and mechanical properties of these new silicon allotropes are studied in detail and their behavior under strain is investigated. We demonstrate that strain can be used to tune its band gap.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 42
DOI: 10.1039/c6cp03200a
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“Nitrogenated, phosphorated and arsenicated monolayer holey graphenes”. Yagmurcukardes M, Horzum S, Torun E, Peeters FM, Senger RT, Physical chemistry, chemical physics 18, 3144 (2016). http://doi.org/10.1039/c5cp05538e
Abstract: Motivated by a recent experiment that reported the synthesis of a new 2D material nitrogenated holey graphene (C2N) [Mahmood et al., Nat. Commun., 2015, 6, 6486], the electronic, magnetic, and mechanical properties of nitrogenated (C2N), phosphorated (C2P) and arsenicated (C2As) monolayer holey graphene structures are investigated using first-principles calculations. Our total energy calculations indicate that, similar to the C2N monolayer, the formation of the other two holey structures are also energetically feasible. Calculated cohesive energies for each monolayer show a decreasing trend going from the C2N to C2As structure. Remarkably, all the holey monolayers considered are direct band gap semiconductors. Regarding the mechanical properties (in-plane stiffness and Poisson ratio), we find that C2N has the highest in-plane stiffness and the largest Poisson ratio among the three monolayers. In addition, our calculations reveal that for the C2N, C2P and C2As monolayers, creation of N and P defects changes the semiconducting behavior to a metallic ground state while the inclusion of double H impurities in all holey structures results in magnetic ground states. As an alternative to the experimentally synthesized C2N, C2P and C2As are mechanically stable and flexible semiconductors which are important for potential applications in optoelectronics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 36
DOI: 10.1039/c5cp05538e
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