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“Layer-by-layer delithiation during lattice collapse as the origin of planar gliding and microcracking in Ni-rich cathodes”. Yu R, Zeng W, Zhou L, Van Tendeloo G, Mai L, Yao Z, Wu J, Cell reports physical science 4, 101480 (2023). http://doi.org/10.1016/J.XCRP.2023.101480
Abstract: High-energy-density nickel (Ni)-rich cathode materials are used in commercial lithium (Li)-ion batteries for electric vehicles, but they suffer from severe structural degradation upon cycling. Planar gliding and microcracking are seeds for fatal mechanical fracture, but their origin remains unclear. Herein, we show that “layer-by -layer delithiation”is activated at high voltages during the charge process when the “lattice collapse”(a characteristic high-voltage lattice evolution in Ni-rich cathodes) occurs. Layer-by-layer deli-thiation is evidenced by direct observation of the consecutive lattice collapse using in situ scanning transmission electron micro-scopy (STEM). The collapsing of the lattice initiates in the expanded planes and consecutively extends to the whole crystal. Localized strain will be induced at lattice-collapsing interface where planar gliding and intragranular microcracks are generated to release this strain. Our study reveals that layer-by-layer delithia-tion during lattice collapse is the fundamental origin of the mechanical instability in single-crystalline Ni-rich cathodes.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
DOI: 10.1016/J.XCRP.2023.101480
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“Direct observation of cation diffusion driven surface reconstruction at van der Waals gaps”. Cui W, Lin W, Lu W, Liu C, Gao Z, Ma H, Zhao W, Van Tendeloo G, Zhao W, Zhang Q, Sang X, Nature communications 14, 554 (2023). http://doi.org/10.1038/S41467-023-35972-9
Abstract: Weak interlayer van der Waals (vdW) bonding has significant impact on the surface/interface structure, electronic properties, and transport properties of vdW layered materials. Unraveling the complex atomistic dynamics and structural evolution at vdW surfaces is therefore critical for the design and synthesis of the next-generation vdW layered materials. Here, we show that Ge/Bi cation diffusion along the vdW gap in layered GeBi2Te4 (GBT) can be directly observed using in situ heating scanning transmission electron microscopy (STEM). The cation concentration variation during diffusion was correlated with the local Te-6 octahedron distortion based on a quantitative analysis of the atomic column intensity and position in time-elapsed STEM images. The in-plane cation diffusion leads to out-of-plane surface etching through complex structural evolutions involving the formation and propagation of a non-centrosymmetric GeTe2 triple layer surface reconstruction on fresh vdW surfaces, and GBT subsurface reconstruction from a septuple layer to a quintuple layer. Our results provide atomistic insight into the cation diffusion and surface reconstruction in vdW layered materials. Weak interlayer van der Waals (vdW) bonding has significant impact on the structure and properties of vdW layered materials. Here authors use in-situ aberration-corrected ADF-STEM for an atomistic insight into the cation diffusion in the vdW gaps and the etching of vdW surfaces at high temperatures.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
DOI: 10.1038/S41467-023-35972-9
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“2D atomic mapping of oxidation states in transition metal oxides by scanning transmission electron microscopy and electron energy-loss spectroscopy : reply”. Tan H, Turner S, Yucelen E, Verbeeck J, Van Tendeloo G, Physical review letters 108, 259702 (2012). http://doi.org/10.1103/PHYSREVLETT.108.259702
Keywords: Editorial; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
DOI: 10.1103/PHYSREVLETT.108.259702
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“A-site ordering and stripe phases in manganite films”. Sudheendra L, Moshnyaga V, Lebedev OI, Gehrke K, Belenciuc A, Shapoval O, Van Tendeloo G, Samwer K, Physica: B : condensed matter
T2 –, International Conference on Strongly Correlated Electron Systems (SCES, 2007), MAY 13-18, 2007, Houston, TX 403, 1645 (2008). http://doi.org/10.1016/j.physb.2007.10.332
Abstract: Insulating and metallic stripes above and below the Curie temperature, T-C, respectively, were observed by a high-resolution scanning tunneling microscopy (STM) and/or spectroscopy (STS) in A-site ordered and macroscopically strain free epitaxial La0.75Ca0.25MnO3 film grown on MgO substrate. The “insulating” stripes were found to be incommensurable to the lattice and aligned along (110) direction. Metallic stripes were commensurable with periodicity 2a(p)similar to 0.8 nm and aligned parallel to the crystallographic a/b-axis. Formation of these stripes involves competing charge, orbital, and lattice orders and is an outcome of an overlapping of electron wave functions mediated by the local lattice-strain distribution, existed even in A-site ordered film due to the difference in cation radii of La and Ca. (C) 2007 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.386
DOI: 10.1016/j.physb.2007.10.332
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“Anion ordering in fluorinated La2CuO4”. Hadermann J, Abakumov AM, Van Tendeloo G, Shpanchenko RV, Oleinikov PN, Antipov EV s.l., page 133 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“Atomic structure of alloys close to phase transitions”. Van Tendeloo G, Schryvers D, Nucleation and growth processes in materials 580, 283 (2000)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Catalyst traces after chemical purification in CVD grown carbon nanotubes”. Biró, LP, Khanh NQ, Horváth ZE, Vértesy Z, Kocsonya A, Konya Z, Osváth Z, Koós A, Guylai J, Zhang XB, Van Tendeloo G, Fonseca A, Nagy JB, , 183 (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“CdSe quantum dot formation induced by amorphous Se”. Aichele T, Robin I-C, Bougerol C, André, R, Tatarenko S, Van Tendeloo G, Surface science : a journal devoted to the physics and chemistry of interfaces
T2 –, International Conference on NANO-Structures Self Assembling, JUL 02-06, 2006, Aix en Provence, FRANCE 601, 2664 (2007). http://doi.org/10.1016/j.susc.2006.12.001
Abstract: The mechanism allowing the transition from a two-dimensional strained layer of CdSe on ZnSe to self-assembled islands induced by the use of amorphous selenium is still not fully understood. For a better understanding, atomic force microscopy and transmission electron microscopy studies were performed on CdSe films with a thickness close to that for quantum dot formation. Below this thickness, the sample surface results in undulations along the [110] crystal direction, while few quantum dots are situated in the wave valleys. Plan view transmission electron microscopy studies reveal a strong anisotropy of the islands and show that the Se desorption conditions are crucial. (C) 2006 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.062
DOI: 10.1016/j.susc.2006.12.001
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“Characterisation of multilayer ramp-type REBa2Cu3O7-\delta structures by scanning probe microscopy and high-resolution electron microscopy”. Blank DHA, Rijnders AJHM, Verhoeven MAJ, Bergs RMH, Rogalla H, Verbist K, Lebedev O, Van Tendeloo G, Journal of alloys and compounds
T2 –, Symposium on High Temperature Superconductor Thin Films, Growth, Mechanisms, Interfaces, Multilayers, at the 1996 Spring Meeting of the European-Materials-Society, June 04-07, 1996, Strasbourg, France 251, 206 (1997). http://doi.org/10.1016/S0925-8388(96)02799-5
Abstract: We studied the morphology of ramps in REBa2CU3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TIN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence, Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, con even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.133
DOI: 10.1016/S0925-8388(96)02799-5
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“Characterization of MO derived nanostructured titania powders”. Ahonen PP, Kauppinen EI, Tapper U, Nenonen P, Joubert JC, Deschanvres JL, Van Tendeloo G, Electron microscopy: vol. 2 , 373 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition”. Mortet V, Zhang L, Echert M, Soltani A, d' Haen J, Douheret O, Moreau M, Osswald S, Neyts E, Troadec D, Wagner P, Bogaerts A, Van Tendeloo G, Haenen K, Materials Research Society symposium proceedings (2009). http://doi.org/10.1557/PROC-1203-J05-03
Abstract: Nanocrystalline diamond films have generated much interested due to their diamond-like properties and low surface roughness. Several techniques have been used to obtain a high re-nucleation rate, such as hydrogen poor or high methane concentration plasmas. In this work, the properties of nano-diamond films grown on silicon substrates using a continuous DC bias voltage during the complete duration of growth are studied. Subsequently, the layers were characterised by several morphological, structural and optical techniques. Besides a thorough investigation of the surface structure, using SEM and AFM, special attention was paid to the bulk structure of the films. The application of FTIR, XRD, multi wavelength Raman spectroscopy, TEM and EELS yielded a detailed insight in important properties such as the amount of crystallinity, the hydrogen content and grain size. Although these films are smooth, they are under a considerable compressive stress. FTIR spectroscopy points to a high hydrogen content in the films, while Raman and EELS indicate a high concentration of sp2 carbon. TEM and EELS show that these films consist of diamond nano-grains mixed with an amorphous sp2 bonded carbon, these results are consistent with the XRD and UV Raman spectroscopy data.
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1557/PROC-1203-J05-03
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“Charcaterization by high-resolution transmission electron microscopy”. van Landuyt J, Van Tendeloo G Stt, Den Haag, page 187 (1998).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Corrigendum: Structural phase transition at the percolation threshold in epitaxial (La0.7Ca0.3MnO3)1-x:(MgO)x nanocomposite films”. Moshnyaga V, Damaschke B, Shapoval O, Belenchuk A, Faupel J, Lebedev OI, Verbeeck J, Van Tendeloo G, Mücksch M, Tsurkan V, Tidecks R, Samwer K, Nature materials 4, 104 (2005)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 39.737
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“Crystalline and amorphous frameworks with giant pores: what information ca we expect from advanced TEM?”.Lebedev OI, Van Tendeloo G, Electron microscopy and multiscale modeling: proceedings of the AIP conference proceedings 999, 245 (2008)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Crystallography of fullerites and related graphene textures”. van Landuyt J, Van Tendeloo G, Amelinckx S, Zhang XF, Zhang XB, Luyten W, Materials science forum 150/151, 53 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Defect structure of Hg-based ceramic superconductors (invited)”. Van Tendeloo G, Hervieu M, Chaillout C, Sciences , 949 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Direct observation of clusters in some FCC alloys by HREM”. De Meulenaere P, Van Tendeloo G, van Landuyt J, Icem 13, 447 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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Blumenau AT, Frauenheim T, Ö,berg S, Willems B, Van Tendeloo G (2004) Dislocation structures in diamond: density-functional based modelling and high resolution electron microscopy. Trans Tech Publications, s.l
Keywords: MA1 Book as author; Electron microscopy for materials research (EMAT)
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“Effect of the substitution Ba\leftrightarrow Sr on the Ga-1222 superstructure : an electron diffraction study”. Milat O, Van Tendeloo G, Amelinckx S, Wright AJ, Greaves C, Chemistry of materials 7, 1709 (1995). http://doi.org/10.1021/cm00057a021
Abstract: The superstructure of the RE(2)(Sr0.85-xBaxNd0.15)(2)GaCU2O9 compound is found to change significantly with increasing substitution of Ba for Sr. Most of the changes take place in the (Sr0.85-xBaxNd0.15)O-GaO-(Sr0.85-xBaxNd0.15)O lamella, the rest of the basic structure being hardly affected. The structural changes for O less than or equal to x less than or equal to 0.65 are studied by electron diffraction. The arrangement of the chains of GaO4 tetrahedra in the Ba-free compound becomes disordered at x > 0.25. At x similar to 0.65 a rearrangement of the chains in the GaO layers takes place; they form a meandering arrangement, which can be described on a 4a(p) x 2a(p) x c(p) superlattice. This rearrangement is accompanied by ordering of Ba and Sr atoms in the adjacent (ST0.85-xBaxNd0.15)O layers. A simple scheme is proposed to explain the influence of the substitution of Ba for Sr on the linking of the GaO4 tetrahedra and on the geometry of the ''chains'' in the GaO layer.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.354
DOI: 10.1021/cm00057a021
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“Electrochemical growth and characterization of nanostructured ZnO thin films”. Ghica C, Enculescu I, Nistor LC, Matei E, Van Tendeloo G, Journal of optoelectronics and advanced materials 10, 3237 (2008)
Abstract: ZnO is a wide band-gap (ca. 3.4 eV) semiconductor, piezoelectric, pyroelectric, biocompatible, transparent in the visible spectrum and UV light emitting material. The fabrication in 2001 of the first nanobelts of semiconductor oxide materials lead to a rapid expansion of researches concerning one dimensional nanostructures (nanotubes, nanowires, nanobelts), given their possible application in optics, optoelectronics, piezoelectricity, catalysis. Researches carried on up to date evidenced the possibility to obtain an extraordinary variety of ZnO nanostructures, in function of the experimental parameters and the used growth methods. In this work we present morphostructural results on nanostructured ZnO layers obtained by electrochemical deposition. The films have been grown on gold covered glass plates and Si wafers, in various experimental conditions such as: nature of the wetting agents, electrical polarization of the substrate (continuous, pulsed). The influence of the growth conditions on the crystalline structure and morphology of the films is revealed by scanning and transmission electron microscopy studies. The films show a variety of growth morphologies, from entangled-wires-like to honeycomb-like layers. These large-specific-surface layers will be tested as nanostructured substrates for photovoltaic cells with improved efficiency.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.449
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“Electron diffraction of nanotubes bundles : unique helicity and tube-tube atomically coherent packing”. Colomer J-F, Henrard L, Lambin P, Van Tendeloo G, AIP conference proceedings
T2 –, 16th International Winterschool on Electronic Properties of Novel, Materials, MAR 02-09, 2002, KIRCHBERG, AUSTRIA , 314 (2002). http://doi.org/10.1063/1.1514131
Abstract: The atomic structure of single-wall carbon nanotube bundles produced by three different techniques has been characterized by electron diffraction and microscopy. Small bundles produced by Catalytical Chemical Vapor Deposition (CCVD) exhibit only one or two tube chiralities within a single bundle while bundles produced by arc-discharge or laser-ablation exhibit more chiralities. A detailed analysis of the central line of diffraction is also presented. The CCVD nanotubes present more intense spots around 1.7 Angstrom(-1) < k < 2Angstrom(-1) (k is the momentum transfer) compared to what is observed for nanotubes produced by other methods. Amongst the possible explanation for such an anomaly, we put forward that in this range of momentum transfer, the relative tube orientations and translations are important for what concerns the interpretation of the diffraction peaks intensities.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
DOI: 10.1063/1.1514131
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“Electron-microscopy and the structural studies of superconducting materials and fullerites”. Van Tendeloo G, Amelinckx S, NATO Advanced Study Institutes series: series E : applied sciences
T2 –, NATO Advanced Study Institute on Materials and crystallographic Aspects, of HT(c)-Superconductivity, May 17-30, 1993, Erice, Italy , 521 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Evidence for another low-temperature phase transition in tetragonal Pb(ZrxTi1-x)O3 (x=0.515,0.520)”. Mishra RSK, Pandey D, Lemmens H, Van Tendeloo G, Physical review : B : condensed matter and materials physics 64, 054104 (2001). http://doi.org/10.1103/PhysRevB.64.054101
Abstract: Results of dielectric and resonance frequency (f(r)) measurements below room temperature are presented for Pb(ZrxTi1-x)O-3, x = 0.515 and 0.520. It is shown that the temperature coefficient of f(r) changes sign from negative to positive around 210 and 265 K for x = 0.520 and 200 and 260 K for x = 0.515. Anomalies in the real part of the dielectric constant (epsilon') are observed around the same temperatures at which the temperature coefficient of f(r) changes sign because of the electrostrictive coupling between the elastic and dielectric responses. Low-temperature powder x-ray-diffraction (XRD) data, however, reveal only one transition from the tetragonal to monoclinic phase similar to that reported by Noheda et al. [Phys. Rev. B, 61, 8687 (2000)]. Electron-diffraction data, on the other hand, reveal yet another structural transition at lower temperatures corresponding to the second anomaly in the epsilon' vs T and f(r) vs T curves. This second transition is shown to be a cell-doubling transition not observed by Noheda et al. in their XRD studies. The observation of superlattice reflections raises doubts about the correctness of the Cm space group proposed by Noheda et al. for the monoclinic phase of Pb(ZrxTi(1-x))O-3 below the second transition temperature.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
DOI: 10.1103/PhysRevB.64.054101
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“Fine structure of CMR perovskites by HREM and CBEM”. Van Tendeloo G, Richard O, Schuddinck W, Hervieu M, Electron microscopy: vol. 1 , 383 (1998)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited)”. Schryvers D, Van Tendeloo G, van Landuyt J, Le Tanner, , 659 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“HREM investigation of La(1-x)Ca(x)MnO3-delta thin films”. Lebedev O, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier HU, , 517 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“HREM investigation of La1-xCaxMnO3- thin films”. Lebedev OI, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier H-U, Electron microscopy: vol. 2 , 517 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“HREM study of Rb6C60 and helical shaped carbon nanotubules”. Bernaerts D, Zhang X, Zhang X, Van Tendeloo G, Vanlanduyt J, Amelinckx S, Sciences , 305 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Layered structures accomodating stoichiometry in M2X2O7 systems, as seen by diffraction and HREM”. Nihoul G, Leroux C, Cesari C, Van Tendeloo G, Electron microscopy: vol. 2 , 295 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“The local structure of YBCO based materials by TEM”. Van Tendeloo G, Lebedev OI, Verbist K, Abakumov AM, Shpanchenko RV, Antipov EV, Blank DHA Kluwer Academic, Dordrecht, page 11 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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