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Author Shanenko, A.A.; Tempère, J.; Brosens, F.; Devreese, J.T. doi  openurl
  Title Mesoscopic samples: the superconducting condensate via the Gross.Pitaevskii scenario Type A1 Journal article
  Year 2004 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 131 Issue Pages 409-414  
  Keywords A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000223011700012 Publication Date 2004-03-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.554; 2004 IF: 1.523  
  Call Number UA @ lucian @ c:irua:48282 Serial 2000  
Permanent link to this record
 

 
Author Brosens, F.; Magnus, W. doi  openurl
  Title Newtonian trajectories : a powerful tool for solving quantum dynamics Type A1 Journal article
  Year 2010 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 150 Issue 43/44 Pages 2102-2105  
  Keywords A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT)  
  Abstract Since Ehrenfests theorem, the role and importance of classical paths in quantum dynamics have been examined by several means. Along this line, we show that the classical equations of motion provide a solution to quantum dynamics, if appropriately incorporated into the Wigner distribution function, exactly reformulated in a type of Boltzmann equation. Also the quantum-mechanical features of the canonical ensemble can be studied in this framework of Newtonian dynamics, if the initial distribution function is appropriately constructed from the statistical operator.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000284251700006 Publication Date 2010-09-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 7 Open Access  
  Notes ; The authors thank J.T. Devreese and J. Tempere for interesting and helpful discussions, and, in particular, L.F. Lemmens for several valuable suggestions. One of the authors (F.B.) acknowledges the FWO projects G.0115.06 and G.0365.08 as well as the WOG project WO.033.09N, for financial support. ; Approved Most recent IF: 1.554; 2010 IF: 1.981  
  Call Number UA @ lucian @ c:irua:85795 Serial 2338  
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Author Masir, M.R.; Moldovan, D.; Peeters, F.M. pdf  doi
openurl 
  Title Pseudo magnetic field in strained graphene : revisited Type A1 Journal article
  Year 2013 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 175 Issue Pages 76-82  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We revisit the theory of the pseudo magnetic field as induced by strain in graphene using the tight- binding approach. A systematic expansion of the hopping parameter and the deformation of the lattice vectors is presented from which we obtain an expression for the pseudo magnetic field for low energy electrons. We generalize and discuss previous results and propose a novel effective Hamiltonian. The contributions of the different terms to the pseudo field expression are investigated for a model triaxial strain profile and are compared with the full solution. Our work suggests that the previous proposed pseudo magnetic field expression is valid up to reasonably high strain (15%) and there is no K-dependent pseudo-magnetic field.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000329538200010 Publication Date 2013-04-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 57 Open Access  
  Notes This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EURO- CORES Program EuroGRAPHENE within the project CONGRAN and the Methusalem programme of the Flemish government. Approved Most recent IF: 1.554; 2013 IF: 1.698  
  Call Number UA @ lucian @ c:irua:114805 Serial 2737  
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Author Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. doi  openurl
  Title Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics Type A1 Journal article
  Year 2008 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 147 Issue 1/2 Pages 31-35  
  Keywords A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000257220400009 Publication Date 2008-04-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.554; 2008 IF: 1.557  
  Call Number UA @ lucian @ c:irua:69748 Serial 2794  
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Author Chang, K.; Peeters, F.M. doi  openurl
  Title Spin-polarized tunneling through diluted magnetic semiconductor barriers Type A1 Journal article
  Year 2001 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 120 Issue Pages 181-184  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000171685400001 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 35 Open Access  
  Notes Approved Most recent IF: 1.554; 2001 IF: 1.381  
  Call Number UA @ lucian @ c:irua:37303 Serial 3099  
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Author Ivanov, V.A.; van den Broek, M.; Peeters, F.M. doi  openurl
  Title Strongly interacting σ-electrons and MgB2 superconductivity Type A1 Journal article
  Year 2001 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 120 Issue Pages 53-57  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000171221900001 Publication Date 2002-10-31  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 5 Open Access  
  Notes Approved Most recent IF: 1.554; 2001 IF: 1.381  
  Call Number UA @ lucian @ c:irua:37304 Serial 3187  
Permanent link to this record
 

 
Author Piacente, G.; Schweigert, I.V.; Betouras, J.J.; Peeters, F.M. pdf  doi
openurl 
  Title Structural properties and melting of a quasi-one dimensional classical Wigner crystal Type A1 Journal article
  Year 2003 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 128 Issue 2-3 Pages 57-61  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The structural and melting properties of a quasi-one dimensional system of charged particles, interacting through a screened Coulomb potential are investigated. Depending on the density and the screening length, the system crystallizes in different lattice structures. The structural phase transitions between them are of first or second order. The melting of the system is studied through Monte Carlo simulations and reentrant behavior as a function of density is observed as well as evidence of anisotropic melting. (C) 2003 Published by Elsevier Ltd.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000185533100004 Publication Date 2003-08-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 9 Open Access  
  Notes Approved Most recent IF: 1.554; 2003 IF: 1.602  
  Call Number UA @ lucian @ c:irua:102790 Serial 3253  
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Author Ferreira, W.P.; Farias, G.A.; Carmona, H.A.; Peeters, F.M. doi  openurl
  Title Structural transitions in a classical two-dimensional molecule system Type A1 Journal article
  Year 2002 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 122 Issue 12 Pages 665-669  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The ground state of a classical two-dimensional (2D) system with a finite number of charge particles, trapped by two positive impurity charges localized at a distance (z(0)) from the. 2D plane and separated from each other by a distance chi(p) are obtained. The impurities are allowed to carry more than one positive charge. This classical system can form a 2D-like classical molecule that exhibits structural transitions and spontaneous symmetry breaking as function of the separation between the positive charges before it transforms into two 2D-like classical atoms. We also observe structural transitions as a function of the dielectric constant of the substrate which supports the charged particles, in addition to broken symmetry states and unbinding of particles. (C) 2002 Elsevier Science Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000177129500008 Publication Date 2002-10-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.554; 2002 IF: 1.671  
  Call Number UA @ lucian @ c:irua:95137 Serial 3268  
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Author Matulis, A.; Peeters, F.M. doi  openurl
  Title Wigner crystallization in the two electron quantum dot Type A1 Journal article
  Year 2001 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 117 Issue Pages 655-660  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000167475900006 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 34 Open Access  
  Notes Approved Most recent IF: 1.554; 2001 IF: 1.381  
  Call Number UA @ lucian @ c:irua:37305 Serial 3920  
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Author Govaerts, K.; Partoens, B.; Lamoen, D. pdf  url
doi  openurl
  Title Extended homologous series of Sn–O layered systems: A first-principles study Type A1 Journal article
  Year 2016 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 243 Issue 243 Pages 36-43  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)  
  Abstract Apart from the most studied tin-oxide compounds, SnO and SnO2, intermediate states have been claimed to exist for more than a hundred years. In addition to the known homologous series (Seko et al., Phys. Rev. Lett. 100, 045702 (2008)), we here predict the existence of several new compounds with an O concentration between 50 % (SnO) and 67 % (SnO2). All these intermediate compounds are constructed from removing one or more (101) oxygen layers of SnO2. Since the van der Waals (vdW) interaction is known to be important for the Sn-Sn interlayer distances, we use a vdW-corrected functional, and compare these results with results obtained with PBE and hybrid functionals. We present the electronic properties of the intermediate structures and we observe a decrease of the band gap when (i) the O concentration increases and (ii) more SnO-like units are present for a given concentration. The contribution of the different atoms to the valence and conduction band is also investigated.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000381544200007 Publication Date 2016-06-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 10 Open Access  
  Notes We gratefully acknowledge financial support from a GOA fund of the University of Antwerp. K.G. thanks the University of Antwerp for a PhD fellowship. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), both funded by the Hercules Foundation and the Flemish Government – department EWI. Approved Most recent IF: 1.554  
  Call Number c:irua:134037 Serial 4085  
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Author Petrovic, M.D.; Peeters, F.M. pdf  doi
openurl 
  Title Quantum transport in graphene Hall bars : effects of side gates Type A1 Journal article
  Year 2017 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 257 Issue 257 Pages 20-26  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau levels, and creates new propagating states in the Landau spectrum (i.e. snake states). The existence of these new states leads to an interesting modification of the bend and Hall resistances, with new quantizing plateaus appearing in close proximity of the Landau levels. The electron guiding in this system can be understood by studying the current density profiles of the incoming and outgoing modes. From the fact that guided electrons fully transmit without any backscattering (similarly to edge states), we are able to analytically predict the values of the quantized resistances, and they match the resistance data we obtain with our numerical (tight-binding) method. These insights in the electron guiding will be useful in predicting the resistances for other side-gate configurations, and possibly in other system geometries, as long as there is no backscattering of the guided states.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000401101400005 Publication Date 2017-04-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record  
  Impact Factor (up) 1.554 Times cited Open Access  
  Notes ; This work was supported by the Methusalem programme of the Flemish government. One of us (F. M. Peeters) acknowledges correspondence with K. Novoselov. ; Approved Most recent IF: 1.554  
  Call Number UA @ lucian @ c:irua:143761 Serial 4604  
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Author Zhao, C.X.; Xu, W.; Dong, H.M.; Yu, Y.; Qin, H.; Peeters, F.M. pdf  doi
openurl 
  Title Enhancement of plasmon-photon coupling in grating coupled graphene inside a Fabry-Perot cavity Type A1 Journal article
  Year 2018 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 280 Issue 280 Pages 45-49  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We present a theoretical investigation of the plasmon-polariton modes in grating coupled graphene inside a Fabry-Perot cavity. The cavity or photon modes of the device are determined by the Finite Difference Time Domain (FDTD) simulations and the corresponding plasmon-polariton modes are obtained by applying a many-body self-consistent field theory. We find that in such a device structure, the electric field strength of the incident electromagnetic (EM) field can be significantly enhanced near the edges of the grating strips. Thus, the strong coupling between the EM field and the plasmons in graphene can be achieved and the features of the plasmon-polariton oscillations in the structure can be observed. It is found that the frequencies of the plasmon-polariton modes are in the terahertz (THz) bandwidth and depend sensitively on electron density which can be tuned by applying a gate voltage. Moreover, the coupling between the cavity photons and the plasmons in graphene can be further enhanced by increasing the filling factor of the device. This work can help us to gain an in-depth understanding of the THz plasmonic properties of graphene-based structures.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000439059600008 Publication Date 2018-06-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 1 Open Access  
  Notes ; This work is supported by the National Natural Science Foundation of China (Grand No. 11604192 and Grant No. 11574319); the Center of Science and Technology of Hefei Academy of Science; the Ministry of Science and Technology of China (Grant No. 2011YQ130018); Department of Science and Technology of Yunnan Province; Chinese Academy of Sciences. ; Approved Most recent IF: 1.554  
  Call Number UA @ lucian @ c:irua:152369UA @ admin @ c:irua:152369 Serial 5024  
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Author Wang, W.; Li, L.; Kong, X.; Van Duppen, B.; Peeters, F.M. pdf  url
doi  openurl
  Title T4,4,4-graphyne : a 2D carbon allotrope with an intrinsic direct bandgap Type A1 Journal article
  Year 2019 Publication Solid state communications Abbreviated Journal Solid State Commun  
  Volume 293 Issue 293 Pages 23-27  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract A novel two-dimensional (2D) structurally stable carbon allotrope is proposed using first-principles calculations, which is a promising material for water purification and for electronic devices due to its unique porous structure and electronic properties. Rectangular and hexagonal rings are connected with acetylenic linkages, forming a nanoporous structure with a pore size of 6.41 angstrom, which is known as T-4,T-4,T-4-graphyne. This 2D sheet exhibits a direct bandgap of 0.63 eV at the M point, which originates from the p(z)( )atomic orbitals of carbon atoms as confirmed by a tight-binding model. Importantly, T-4,T-4,T-4-graphyne is found to be energetically more preferable than the experimentally realized beta-graphdiyne, it is dynamically stable and can withstand temperatures up to 1500 K.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000460909600005 Publication Date 2019-02-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 10 Open Access  
  Notes ; This work was supported by National Natural Science Foundation of China (Grant Nos. 11404214 and 11455015), the China Scholarship Council (CSC), the Science and Technology Research Foundation of Jiangxi Provincial Education Department (Grant Nos. GJJ180868 and GJJ161062) the Fonds Wetenschappelijk Onderzoek (FWO-V1), and the FLAG-ERA project TRANS2DTMD. BVD was supported by the Research Foundation – Flanders (FWO-V1) through a postdoctoral fellowship. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center), funded by the Research Foundation – Flanders (FWO) and the Flemish Government department EWI. ; Approved Most recent IF: 1.554  
  Call Number UA @ admin @ c:irua:158503 Serial 5234  
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Author Saniz, R.; Bekaert, J.; Partoens, B.; Lamoen, D. pdf  url
doi  openurl
  Title First-principles study of defects at Σ3 grain boundaries in CuGaSe2 Type A1 Journal article
  Year 2021 Publication Solid State Communications Abbreviated Journal Solid State Commun  
  Volume Issue Pages 114263  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract We present a first-principles computational study of cation–Se 3 (112) grain boundaries in CuGaSe. We discuss the structure of these grain boundaries, as well as the effect of native defects and Na impurities on their electronic properties. The formation energies show that the defects will tend to form preferentially at the grain boundaries, rather than in the grain interiors. We find that in Ga-rich growth conditions Cu vacancies as well as Ga at Cu and Cu at Ga antisites are mainly responsible for having the equilibrium Fermi level pinned toward the middle of the gap, resulting in carrier depletion. The Na at Cu impurity in its +1 charge state contributes to this. In Ga-poor growth conditions, on the other hand, the formation energies of Cu vacancies and Ga at Cu antisites are comparatively too high for any significant influence on carrier density or on the equilibrium Fermi level position. Thus, under these conditions, the Cu at Ga antisites give rise to a -type grain boundary. Also, their formation energy is lower than the formation energy of Na at Cu impurities. Thus, the latter will fail to act as a hole barrier preventing recombination at the grain boundary, in contrast to what occurs in CuInSe grain boundaries. We also discuss the effect of the defects on the electronic properties of bulk CuGaSe, which we assume reflect the properties of the grain interiors.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000652668500013 Publication Date 2021-03-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.554 Times cited 1 Open Access OpenAccess  
  Notes Fwo; We acknowledge the financial support of FWO-Vlaanderen, Belgium through project G.0150.13. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), both funded by FWO-Vlaanderen and the Flemish Government-department EWI. Approved Most recent IF: 1.554  
  Call Number EMAT @ emat @c:irua:176544 Serial 6703  
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Author Chaves, A.; Peeters, F.M. pdf  doi
openurl 
  Title Tunable effective masses of magneto-excitons in two-dimensional materials Type A1 Journal article
  Year 2021 Publication Solid State Communications Abbreviated Journal Solid State Commun  
  Volume 334 Issue Pages 114371  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Excitonic properties of Ge2H2 and Sn2H2, also known as Xanes, are investigated within the effective mass model. A perpendicularly applied magnetic field induces a negative shift on the exciton center-of-mass kinetic energy that is approximately quadratic with its momentum, thus pushing down the exciton dispersion curve and flattening it. This can be interpreted as an increase in the effective mass of the magneto-exciton, tunable by the field intensity. Our results show that in low effective mass two-dimensional semiconductors, such as Xanes, the applied magnetic field allows one to tune the magneto-exciton effective mass over a wide range of values.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000670329600003 Publication Date 2021-05-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record  
  Impact Factor (up) 1.554 Times cited Open Access Not_Open_Access  
  Notes Approved Most recent IF: 1.554  
  Call Number UA @ admin @ c:irua:179762 Serial 7037  
Permanent link to this record
 

 
Author Zografos, O.; Dutta, S.; Manfrini, M.; Vaysset, A.; Sorée, B.; Naeemi, A.; Raghavan, P.; Lauwereins, R.; Radu, I.P. pdf  doi
openurl 
  Title Non-volatile spin wave majority gate at the nanoscale Type A1 Journal article
  Year 2017 Publication AIP advances T2 – 61st Annual Conference on Magnetism and Magnetic Materials (MMM), OCT 31-NOV 04, 2016, New Orleans, LA Abbreviated Journal Aip Adv  
  Volume 7 Issue 5 Pages 056020  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract A spin wave majority fork-like structure with feature size of 40 nm, is presented and investigated, through micromagnetic simulations. The structure consists of three merging out-of-plane magnetization spin wave buses and four magneto-electric cells serving as three inputs and an output. The information of the logic signals is encoded in the phase of the transmitted spin waves and subsequently stored as direction of magnetization of the magneto-electric cells upon detection. The minimum dimensions of the structure that produce an operational majority gate are identified. For all input combinations, the detection scheme employed manages to capture the majority phase result of the spin wave interference and ignore all reflection effects induced by the geometry of the structure. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).  
  Address  
  Corporate Author Thesis  
  Publisher Amer inst physics Place of Publication Melville Editor  
  Language Wos 000402797100177 Publication Date 2017-02-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2158-3226 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.568 Times cited 13 Open Access  
  Notes ; ; Approved Most recent IF: 1.568  
  Call Number UA @ lucian @ c:irua:144288 Serial 4673  
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Author Leliaert, J.; Mulkers, J.; De Clercq, J.; Coene, A.; Dvornik, M.; Van Waeyenberge, B. pdf  url
doi  openurl
  Title Adaptively time stepping the stochastic Landau-Lifshitz-Gilbert equation at nonzero temperature: Implementation and validation in MuMax3 Type A1 Journal article
  Year 2017 Publication AIP advances Abbreviated Journal Aip Adv  
  Volume 7 Issue 12 Pages 125010  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract Thermal fluctuations play an increasingly important role in micromagnetic research relevant for various biomedical and other technological applications. Until now, it was deemed necessary to use a time stepping algorithm with a fixed time step in order to perform micromagnetic simulations at nonzero temperatures. However, Berkov and Gorn have shown in [D. Berkov and N. Gorn, J. Phys.: Condens. Matter,14, L281, 2002] that the drift term which generally appears when solving stochastic differential equations can only influence the length of the magnetization. This quantity is however fixed in the case of the stochastic Landau-Lifshitz-Gilbert equation. In this paper, we exploit this fact to straightforwardly extend existing high order solvers with an adaptive time stepping algorithm. We implemented the presented methods in the freely available GPU-accelerated micromagnetic software package MuMax3 and used it to extensively validate the presented methods. Next to the advantage of having control over the error tolerance, we report a twenty fold speedup without a loss of accuracy, when using the presented methods as compared to the hereto best practice of using Heun’s solver with a small fixed time step.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000418492500010 Publication Date 2017-12-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2158-3226 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.568 Times cited 13 Open Access  
  Notes This work was supported by the Fonds Wetenschappelijk Onderzoek (FWO-Vlaanderen) through Project No. G098917N and a postdoctoral fellowship (A.C.). J. L. is supported by the Ghent University Special Research Fund (BOF postdoctoral fellowship). We gratefully acknowl- edge the support of NVIDIA Corporation with the donation of the Titan Xp GPU used for this research. Approved Most recent IF: 1.568  
  Call Number CMT @ cmt @c:irua:147860 Serial 4799  
Permanent link to this record
 

 
Author Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. pdf  doi
openurl 
  Title Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current Type A1 Journal article
  Year 2011 Publication Solid state electronics Abbreviated Journal Solid State Electron  
  Volume 65-66 Issue Pages 64-71  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs are investigated including important aspects like CV characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 × 6 k · p Schrödinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (1 1 0) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (0 0 1) surface orientation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000297182700012 Publication Date 2011-07-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.58 Times cited 2 Open Access  
  Notes ; ; Approved Most recent IF: 1.58; 2011 IF: 1.397  
  Call Number UA @ lucian @ c:irua:92866 Serial 433  
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Author Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. pdf  doi
openurl 
  Title Modeling the impact of junction angles in tunnel field-effect transistors Type A1 Journal article
  Year 2012 Publication Solid state electronics Abbreviated Journal Solid State Electron  
  Volume 69 Issue Pages 31-37  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We develop an analytical model for a tunnel field-effect transistor (TFET) with a tilted source junction angle. The tunnel current is derived by using circular tunnel paths along the electric field. The analytical model predicts that a smaller junction angle improves the TFET performance, which is supported by device simulations. An analysis is also made based on straight tunnel paths and tunnel paths corresponding to the trajectory of a classical particle. In all the aforementioned cases, the same conclusions are obtained. A TFET configuration with an encroaching polygon source junction is studied to analyze the junction angle dependence at the smallest junction angles. The improvement of the subthreshold swing (SS) with decreasing junction angle can be achieved by using thinner effective oxide thickness, smaller band gap material and longer encroaching length of the encroaching junction. A TFET with a smaller junction angle on the source side also has an innate immunity against the degradation of the fringing field from the gate electrode via a high-k spacer. A large junction angle on the drain side can suppress the unwanted ambipolar current of TFETs. (c) 2011 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000301561600009 Publication Date 2012-01-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.58 Times cited 9 Open Access  
  Notes ; We acknowledge the input on nanowire processing of Rita Rooyackers and useful discussions with Wim Magnus. William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was also supported by imec's Industrial Affiliation Program. ; Approved Most recent IF: 1.58; 2012 IF: 1.482  
  Call Number UA @ lucian @ c:irua:97816 Serial 2145  
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Author Carrillo-Nunez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. pdf  doi
openurl 
  Title Phonon-assisted Zener tunneling in a p-n diode silicon nanowire Type A1 Journal article
  Year 2013 Publication Solid state electronics Abbreviated Journal Solid State Electron  
  Volume 79 Issue Pages 196-200  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The Zener tunneling current flowing through a biased, abrupt p-n junction embedded in a cylindrical silicon nanowire is calculated. As the band gap becomes indirect for sufficiently thick wires, Zener tunneling and its related transitions between the valence and conduction bands are mediated by short-wavelength phonons interacting with mobile electrons. Therefore, not only the high electric field governing the electrons in the space-charge region but also the transverse acoustic (TA) and transverse optical (TO) phonons have to be incorporated in the expression for the tunneling current. The latter is also affected by carrier confinement in the radial direction and therefore we have solved the Schrodinger and Poisson equations self-consistently within the effective mass approximation for both conduction and valence band electrons. We predict that the tunneling current exhibits a pronounced dependence on the wire radius, particularly in the high-bias regime. (C) 2012 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000313611000037 Publication Date 2012-09-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.58 Times cited 2 Open Access  
  Notes ; This work is supported by the Flemish Science Foundation (FWO-VI), and the Interuniversity Attraction Poles, Belgium State, Belgium Science Policy, and IMEC. One of the authors (W. Vandenberghe) gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). ; Approved Most recent IF: 1.58; 2013 IF: 1.514  
  Call Number UA @ lucian @ c:irua:110104 Serial 2600  
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Author Pham, A.-T.; Sorée, B.; Magnus, W.; Jungemann, C.; Meinerzhagen, B.; Pourtois, G. pdf  doi
openurl 
  Title Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations Type A1 Journal article
  Year 2012 Publication Solid state electronics Abbreviated Journal Solid State Electron  
  Volume 71 Issue Pages 30-36  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Simulation results of electrostatics in Si cylindrical junctionless nanowire transistors with a homogenous channel are presented. Junctionless transistors including strain and arbitrary crystallographic orientations are studied. Size quantization effects are simulated by self-consistent solutions of the Poisson and Schrodinger equations. The 6 x 6 k.p method is employed for the calculation of the valence subband structure in a junctionless nanowire pFET. The influence of stress/strain and crystallographic channel orientation on to the electrostatics in terms of subband structure, charge density, and C-V curve is systematically studied. (C) 2011 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000303033800007 Publication Date 2011-12-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.58 Times cited 2 Open Access  
  Notes ; ; Approved Most recent IF: 1.58; 2012 IF: 1.482  
  Call Number UA @ lucian @ c:irua:98245 Serial 2786  
Permanent link to this record
 

 
Author Xiao, Y.M.; Xu, W.; Peeters, F.M. doi  openurl
  Title Infrared to terahertz absorption window in mono- and multi-layer graphene systems Type A1 Journal article
  Year 2014 Publication Optics communications Abbreviated Journal Opt Commun  
  Volume 328 Issue Pages 135-142  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We present a theoretical study on optical properties such as optical conductance and light transmission coefficient for mono- and multi-layer graphene systems with AB- and ABC-stacking. Considering an air/graphene/dielectric-water structure, the optical coefficients for those graphene systems are examined and compared. The universal optical conductance sigma(N)(0)=N pi e(2)/(2h) for N layer graphene systems in the visible region is verified. For N 3 layer graphene, the mini-gap induced absorption edges can be observed in odd layers AB-stacked multilayer graphene, where the number and position of the absorption edges are decided by the layers number N. Meanwhile, we can observe the optical absorption windows for those graphene systems in the infrared to terahertz bandwidth (0.2-150 THz). The absorption window is induced by different transition energies required for inter- and intra-band optical absorption channels. We find that the depth and width of the absorption window can be tuned not only via varying temperature and electron density but also by changing the number of graphene layers and the stacking order. These theoretical findings demonstrate that mono- and multi-layer graphene systems can be applied as frequency tunable optoelectronic devices working in infrared to terahertz bandwidth. (C) 2014 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000336970000022 Publication Date 2014-05-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0030-4018; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.588 Times cited 7 Open Access  
  Notes ; This work was supported by the Ministry of Science and Technology of China (Grant no, 2011YQ130018), Department of Science and Technology of Yunnan Province, and by the Chinese Academy of Sciences. ; Approved Most recent IF: 1.588; 2014 IF: 1.449  
  Call Number UA @ lucian @ c:irua:118364 Serial 1666  
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Author Bafekry, A.; Stampfl, C.; Peeters, F.M. pdf  doi
openurl 
  Title The electronic, optical, and thermoelectric properties of monolayer PbTe and the tunability of the electronic structure by external fields and defects Type A1 Journal article
  Year 2020 Publication Physica Status Solidi B-Basic Solid State Physics Abbreviated Journal Phys Status Solidi B  
  Volume Issue Pages 2000182-12  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract First‐principles calculations, within the framework of density functional theory, are used to investigate the structural, electronic, optical, and thermoelectric properties of monolayer PbTe. The effect of layer thickness, electric field, strain, and vacancy defects on the electronic and magnetic properties is systematically studied. The results show that the bandgap decreases as the layer thickness increases from monolayer to bulk. With application of an electric field on bilayer PbTe, the bandgap decreases from 70 meV (0.2 V Å⁻¹) to 50 meV (1 V Å⁻¹) when including spin–orbit coupling (SOC). Application of uniaxial strain induces a direct‐to‐indirect bandgap transition for strain greater than +6%. In addition, the bandgap decreases under compressive biaxial strain (with SOC). The effect of vacancy defects on the electronic properties of PbTe is also investigated. Such vacancy defects turn PbTe into a ferromagnetic metal (single vacancy Pb) with a magnetic moment of 1.3 μB, and into an indirect semiconductor with bandgap of 1.2 eV (single Te vacancy) and 1.5 eV (double Pb + Te vacancy). In addition, with change of the Te vacancy concentration, a bandgap of 0.38 eV (5.55%), 0.43 eV (8.33%), and 0.46 eV (11.11%) is predicted.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000527679200001 Publication Date 2020-04-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.6 Times cited 37 Open Access  
  Notes ; This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2017R1A2B2011989). In addition, this work was supported by the FLAG-ERA project 2DTRANS TMD and the Flemish Science Foundation (FWO-Vl). The authors are thankful for comments by Mohan Verma from the Computational Nanoionics Research Lab, Department of Applied Physics, Bhilai, India and to Francesco Buonocore from ENEA, Casaccia Research Centre, Rome, Italy. ; Approved Most recent IF: 1.6; 2020 IF: 1.674  
  Call Number UA @ admin @ c:irua:168730 Serial 6502  
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Author Bafekry, A.; Van Nguyen, C.; Stampfl, C.; Akgenc, B.; Ghergherehchi, M. pdf  doi
openurl 
  Title Oxygen vacancies in the single layer of Ti₂CO₂ MXene: effects of gating voltage, mechanical strain, and atomic impurities Type A1 Journal article
  Year 2020 Publication Physica Status Solidi B-Basic Solid State Physics Abbreviated Journal Phys Status Solidi B  
  Volume Issue Pages 2000343-2000349  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Herein, using first-principles calculations the structural and electronic properties of the Ti(2)CO(2)MXene monolayer with and without oxygen vacancies are systematically investigated with different defect concentrations and patterns, including partial, linear, local, and hexagonal types. The Ti(2)CO(2)monolayer is found to be a semiconductor with a bandgap of 0.35 eV. The introduction of oxygen vacancies tends to increase the bandgap and leads to electronic phase transitions from nonmagnetic semiconductors to half-metals. Moreover, the semiconducting characteristic of O-vacancy Ti(2)CO(2)can be adjusted via electric fields, strain, and F-atom substitution. In particular, an electric field can be used to alter the nonmagnetic semiconductor of O-vacancy Ti(2)CO(2)into a magnetic one or into a half-metal, whereas the electronic phase transition from a semiconductor to metal can be achieved by applying strain and F-atom substitution. The results provide a useful guide for practical applications of O-vacancy Ti(2)CO(2)monolayers in nanoelectronic and spinstronic nanodevices.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000571060800001 Publication Date 2020-09-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.6 Times cited Open Access  
  Notes ; This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (NRF-2017R1A2B2011989). ; Approved Most recent IF: 1.6; 2020 IF: 1.674  
  Call Number UA @ admin @ c:irua:171948 Serial 6576  
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Author Riva, C.; Schweigert, V.A.; Peeters, F.M. doi  openurl
  Title Angular momentum transitions and magnetic evaporation in off-center D- centers in quantum well Type A1 Journal article
  Year 1998 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 210 Issue Pages 599-603  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000077607400058 Publication Date 2002-09-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.674 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.674; 1998 IF: 0.818  
  Call Number UA @ lucian @ c:irua:24182 Serial 117  
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Author Verberck, B.; Michel, K.H. doi  openurl
  Title Anisotropic packing of C-70 molecules in carbon nanotubes Type A1 Journal article
  Year 2007 Publication Physica status solidi B-basic solid state physics Abbreviated Journal Phys Status Solidi B  
  Volume 244 Issue 11 Pages 4279-4282  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000251355800092 Publication Date 2007-10-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record  
  Impact Factor (up) 1.674 Times cited Open Access  
  Notes Approved Most recent IF: 1.674; 2007 IF: 1.071  
  Call Number UA @ lucian @ c:irua:67350 Serial 128  
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Author Riva, C.; Varga, K.; Schweigert, V.A.; Peeters, F.M. doi  openurl
  Title Binding energy and structure of localized biexcitons in quantum wells Type A1 Journal article
  Year 1998 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 210 Issue Pages 689-692  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000077607400073 Publication Date 2002-09-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.674 Times cited 12 Open Access  
  Notes Approved Most recent IF: 1.674; 1998 IF: 0.818  
  Call Number UA @ lucian @ c:irua:24181 Serial 238  
Permanent link to this record
 

 
Author Pokatilov, E.P.; Croitoru, M.D.; Fomin, V.M.; Devreese, J.T. doi  openurl
  Title Bipolaron stability in an ellipsoidal potential well Type A1 Journal article
  Year 2003 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 237 Issue Pages 244-251  
  Keywords A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000182801800022 Publication Date 2003-04-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.674 Times cited 7 Open Access  
  Notes Approved Most recent IF: 1.674; 2003 IF: 0.987  
  Call Number UA @ lucian @ c:irua:44283 Serial 243  
Permanent link to this record
 

 
Author Brosens, F.; Magnus, W. doi  openurl
  Title Carrier transport in nanodevices: revisiting the Boltzmann and Wigner distribution functions Type A1 Journal article
  Year 2009 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 246 Issue 7 Pages 1656-1661  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract In principle, transport of charged carriers in nanometer sized solid-state devices can be fully characterized once the non-equilibrium distribution function describing the carrier ensemble is known. In this light, we have revisited the Boltzmann and the Wigner distribution functions and the framework in which they emerge from the classical respectively quantum mechanical Liouville equation. We have assessed the method of the characteristic curves as a potential workhorse to solve the time dependent Boltzmann equation for carriers propagating through spatially non-uniform systems, such as nanodevices. In order to validate the proposed solution strategy, we numerically solve the Boltzmann equation for a one-dimensional conductor mimicking the basic features of a biased low-dimensional transistor operating in the on-state. Finally, we propose a computational scheme capable of extending the benefits of the above mentioned solution strategy when it comes to solve the Wigner-Liouville equation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000268659100033 Publication Date 2009-04-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.674 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.674; 2009 IF: 1.150  
  Call Number UA @ lucian @ c:irua:77953 Serial 284  
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Author Krugel, A.; Axt, V.M.; Kuhn, T.; Vagov, A.; Peeters, F.M. doi  openurl
  Title Coherent nonlinear optical response of excitons and biexcitons in quantum dots coupled to phonons Type A1 Journal article
  Year 2006 Publication Physica status solidi B – basic solid state physics Abbreviated Journal Phys Status Solidi B  
  Volume 243 Issue 10 Pages 2241-2246  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000239932300006 Publication Date 2006-08-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.674 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.674; 2006 IF: 0.967  
  Call Number UA @ lucian @ c:irua:60892 Serial 380  
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