Abstract: Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.

Abstract: Results of dielectric and resonance frequency (f(r)) measurements below room temperature are presented for Pb(ZrxTi1-x)O-3, x = 0.515 and 0.520. It is shown that the temperature coefficient of f(r) changes sign from negative to positive around 210 and 265 K for x = 0.520 and 200 and 260 K for x = 0.515. Anomalies in the real part of the dielectric constant (epsilon') are observed around the same temperatures at which the temperature coefficient of f(r) changes sign because of the electrostrictive coupling between the elastic and dielectric responses. Low-temperature powder x-ray-diffraction (XRD) data, however, reveal only one transition from the tetragonal to monoclinic phase similar to that reported by Noheda et al. [Phys. Rev. B, 61, 8687 (2000)]. Electron-diffraction data, on the other hand, reveal yet another structural transition at lower temperatures corresponding to the second anomaly in the epsilon' vs T and f(r) vs T curves. This second transition is shown to be a cell-doubling transition not observed by Noheda et al. in their XRD studies. The observation of superlattice reflections raises doubts about the correctness of the Cm space group proposed by Noheda et al. for the monoclinic phase of Pb(ZrxTi(1-x))O-3 below the second transition temperature.

Abstract: The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved.

Abstract: We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].

Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.

Abstract: A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].

Abstract: Using a combination of electron holography and energy filtering, interference fringes produced after inelastic interaction of electrons with hydrogen molecules are examined. Surprisingly, the coherence of inelastic scattering increases when moving from the surface of a hydrogen-containing bubble to the vacuum. This phenomenon can be understood in terms of the Feynman two-slit thought experiment with a variable ambiguity of the which-way registration. (C) 2006 Elsevier B.V. All rights reserved.

Abstract: Platinum metal was dispersed on microporous, mesoporous, and nonporous support materials including the zeolites Na-Y, Ba-Y, Ferrierite, ZSM-22, ETS-10, and AlPO-11, alumina, and titania. The oxidation of carbon black loosely mixed with catalyst powder was monitored gravimetrically in a gas stream containing nitric oxide, oxygen, and water. The carbon oxidation activity of the catalysts was found to be uniquely related to the Pt dispersion and little influenced by support type. The optimum dispersion is around 3-4% corresponding to relatively large Pt particle sizes of 2040 nm. The carbon oxidation activity reflects the NO oxidation activity of the platinum catalyst, which reaches an optimum in the 20-40 nm Pt particle size range. The lowest carbon oxidation temperatures were achieved with platinum loaded ZSM-22 and AlPO-11 zeolite crystallites bearing platinum of optimum dispersion on their external surfaces.

Abstract: The one-step preparation of capped PbS nanoparticles in an inorganic matrix via UV-induced decomposition of lead thiosulfate complexes intercalated into a hydrotalcite-type layered double hydroxide is reported.

Abstract: Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved.

Abstract: Single-chain elasticity of polyethylene at theta point up to 90% of stretching with respect to its contour length is computed by Monte Carlo simulation of an atomistic model in continuous space. The elasticity law together with the free-energy and the internal energy variations with stretching are found to be very well represented by the wormlike chain model up to 65% of the chain elongation, provided the persistence length is treated as a temperature-dependent parameter. Beyond this value of elongation simple ideal chain models are not able to describe the Monte Carlo data in a thermodynamic consistent way. This study reinforces the use of the wormlike chain model to interpret experimental data on the elasticity of synthetic polymers in the finite extensibility regime, provided the chain is not yet in its fully stretched regime. Specific solvent effects on the elasticity law and the partition between energetic and entropic contributions to single chain elasticity are investigated. (C) 2002 American Institute of Physics.

Abstract: The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.

Abstract: The large-scale production of single-wall carbon nanotubes (SWNTs) is reported. Large quantities of SWNTs can be synthesised by catalytic decomposition of methane over well-dispersed metal particles supported on MgO at 1000 degrees C. The thus produced SWNTs can be separated easily from the support by a simple acidic treatment to obtain a product with high yields (70-80%) of SWNTs. Because the typical synthesis time is 10 min, 1 g of SWNTs can be synthesised per day by this method. The SWNTs are characterized by high-resolution transmission electron microscopy and by Raman spectroscopy, showing the quality and the quantity of products. (C) 2000 Elsevier Science B.V. All rights reserved.

Abstract: Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer.

Abstract: We present energy filtered holography experiments on a thin foil of Al. By propagating the reduced density matrix of the probe electron through the microscope, we quantitatively predict the fringe contrast as a function of energy loss. Fringe contrast simulations include the effect of Fresnel fringes created at the edges of the defocused biprism, the effect of partial coherence in combination with inelastic scattering, and the effect of a finite energy distribution of the incoming beam. (c) 2007 Elsevier B.V. All rights reserved.