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“Study of ramp-type Josephson junctions by HREM”. Verbist K, Lebedev OI, Van Tendeloo G, Verhoeven MAJ, Rijnders AJHM, Blank DHA, Electronic Applications, Vol 2: Large Scale And Power Applications , 49 (1997)
Abstract: Structural aspects of ramp-type Josephson junctions based on REBa2Cu3O7-delta high-T-c superconductors, are investigated by cross-section transmission electron microscopy and results related to fabrication process or physical properties. The barrier layer material is PrBa2Cu3-xGaxO7-delta. The ramp-geometry depends on the etching conditions. High levels of Ga doping (x>0.7) influence the microstructure of the barrier layer thereby changing the junctions properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Biaxially aligned yttria stabilized zirconia and titanium nitride layers deposited by unbalanced magnetron sputtering”. Mahieu S, Ghekiere P, de Winter G, de Gryse R, Depla D, Lebedev OI, Diffusion and defect data : solid state data : part B : solid state phenomena
T2 –, 2nd International Conference on Texture and Anisotropy of Polycrystals, JUL 07-09, 2004, Metz, FRANCE 105, 447 (2005)
Abstract: Control of the texture and the biaxial alignment of sputter deposited films has provoked a great deal of interest due to its technological importance. indeed, many physical properties of thin films are influenced by the biaxial alignment. In this context, extensive research has been established to understand the growth mechanism of biaxially aligned Yttria Stabilized Zirconia (YSZ) as a buffer layer for high temperature superconducting copper oxides. In this work, the growth mechanism in general and the mechanism responsible of the biaxial alignment in detail were investigated for thin films of YSZ and TiN deposited by unbalanced magnetron sputtering using non-aligned polycrystalline stainless steel substrates. The mechanism responsible for the preferential out-of-plane alignment has been investigated by performing depositions on a non-tilted substrate. However, to study the in-plane alignment a tilted substrate was used. The microstructure of the deposited layers was characterised by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The crystallographic alignment has been investigated by X-ray diffraction (XRD) (angular scans and pole figures) and by Selective Area Diffraction (SAD). It was observed that the deposited layers show a zone T or zone II structure and the layers with a zone T structure consist of faceted grains. There seems to be a correlation between the crystal habit of these faceted grains and the measured biaxial alignment. A model for the preferential out-of-plane orientation, the in-plane alignment and the correlation between the microstructure and the biaxial alignment is proposed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Electron microscopy and X-ray structural investigations of incommensurate spin-ladder Sr4.1Ca4.7Bi0.3Cu17O29 single crystals”. Dluzewski P, Pietraszko A, Kozlowski M, Szczepanska A, Gorecka J, Baran M, Leonyuk L, Babonas GJ, Lebedev OI, Szymczak R, Acta physica Polonica: A: general physics, solid state physics, applied physics 98, 729 (2000)
Abstract: Transmission electron microscopy and X-ray diffraction proved chain/ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3 degrees around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.469
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“Structure determination of YBCO fluorinated phases by HREM”. Van Tendeloo G, Lebedev OI, Shpanchenko RV, Antipov EV, Journal of electron microscopy 1, 23 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
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“Ga segregation in DyBa2Cu3O7-\delta/PrBa2Cu3-xGaxO7-\delta/DyBa2Cu3O7-\delta ramp-type Josephson junctions”. Verbist K, Lebedev OI, Van Tendeloo G, Verhoeven MAJ, Rijnders AJHM, Blank DHA, Rogalia H, Applied physics letters 70, 1167 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 8
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“In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Conference series of the Institute of Physics 157, 55 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
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“The crystal structure of Ca3ReO6”. Abakumov AM, Shpanchenko RV, Antipov EV, Lebedev OI, Van Tendeloo G, Journal of solid state chemistry 131, 305 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 10
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“HREM study of ion implantation in 6H-SiC at high temperatures”. Lebedev OI, Van Tendeloo G, Suvorova AA, Usov IO, Suvorov AV, Journal of electron microscopy 46, 271 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 7
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“Inducing superconductivity and structural transformations by fluorination of reduced YBCO”. Shpanchenko RV, Rozova MG, Abakumov AM, Ardashnikova EI, Kovba ML, Putilin SN, Antipov EV, Lebedev OI, Van Tendeloo G, Physica: C : superconductivity 280, 272 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 35
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“HREM investigation of La1-xCaxMnO3- thin films”. Lebedev OI, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier H-U, Electron microscopy: vol. 2 , 517 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Structure of Y123 and Y247 fluorinated phases by HREM”. Lebedev OI, Van Tendeloo G, Abakumov AM, Shpanchenko RV, Rozova MG, Antipov EV, Electron microscopy: vol. 3 , 297 (1998)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“The local structure of YBCO based materials by TEM”. Van Tendeloo G, Lebedev OI, Verbist K, Abakumov AM, Shpanchenko RV, Antipov EV, Blank DHA Kluwer Academic, Dordrecht, page 11 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“Phase competition between Y2BaCuO5 and Y2O3 precipitates in Y-rich YBCO thin films”. Scotti di Uccio U, Miletto Granozio F, di Chiara A, Tafuri F, Lebedev OI, Verbist K, Van Tendeloo G, Physica: C : superconductivity 321, 162 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 17
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“Structural changes in fluorinated T{'} and T* phases”. Hadermann J, Abakumov AM, Lebedev OI, Antipov EV, Van Tendeloo G, , 193 (2000)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Synthesis and structure of fluorinated RBa2Cu2O6+. (R=Dy, Ho and Tm) phases”. Oleynikov PN, Shpanchenko RV, Rozova MG, Abakumov AM, Antipov EV, Hadermann J, Lebedev OI, Van Tendeloo G, Russian journal of inorganic chemistry 46, 153 (2001)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.787
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“Structure of nanoscale mesoporous silica spheres?”.Van Tendeloo G, Lebedev OI, Collart O, Cool P, Vansant EF, Journal of physics : condensed matter 15, S3037 (2003)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
Impact Factor: 2.649
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“Accurate measurements of atomic displacements in La0.9Sr0.1MnO3 thin films grown on a SrTiO3 substrate”. Geuens P, Lebedev OI, van Dyck D, Van Tendeloo G s.l., page 1133 (2000).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
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“Strained La1-xSrxMnO3 (x = 0.1 – 0.3) thin films studied by HREM”. Lebedev OI, Van Tendeloo G, Amelinckx S s.l., page 201 (2000).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Periodic microtwinning as a possible mechanism for the accommodation of the epitaxial film-substrate mismatch in the La1-xSrxMnO3/SrTiO3 system”. Lebedev OI, Van Tendeloo G, Amelinckx S, Razavi F, Habermeier H-U, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 81, 797 (2001)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Corrigendum: Structural phase transition at the percolation threshold in epitaxial (La0.7Ca0.3MnO3)1-x:(MgO)x nanocomposite films”. Moshnyaga V, Damaschke B, Shapoval O, Belenchuk A, Faupel J, Lebedev OI, Verbeeck J, Van Tendeloo G, Mücksch M, Tsurkan V, Tidecks R, Samwer K, Nature materials 4, 104 (2005)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 39.737
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“Crystalline and amorphous frameworks with giant pores: what information ca we expect from advanced TEM?”.Lebedev OI, Van Tendeloo G, Electron microscopy and multiscale modeling: proceedings of the AIP conference proceedings 999, 245 (2008)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Phase selection enabled formation of abrupt axial heterojunctions in branched oxide nanowires”. Gao J, Lebedev OI, Turner S, Li YF, Lu YH, Feng YP, Boullay P, Prellier W, Van Tendeloo G, Wu T, Nano letters 12, 275 (2012). http://doi.org/10.1021/nl2035089
Abstract: Rational synthesis of nanowires via the vaporliquidsolid (VLS) mechanism with compositional and structural controls is vitally important for fabricating functional nanodevices from bottom up. Here, we show that branched indium tin oxide nanowires can be in situ seeded in vapor transport growth using tailored AuCu alloys as catalyst. Furthermore, we demonstrate that VLS synthesis gives unprecedented freedom to navigate the ternary InSnO phase diagram, and a rare and bulk-unstable cubic phase can be selectively stabilized in nanowires. The stabilized cubic fluorite phase possesses an unusual almost equimolar concentration of In and Sn, forming a defect-free epitaxial interface with the conventional bixbyite phase of tin-doped indium oxide that is the most employed transparent conducting oxide. This rational methodology of selecting phases and making abrupt axial heterojunctions in nanowires presents advantages over the conventional synthesis routes, promising novel composition-modulated nanomaterials.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.712
Times cited: 25
DOI: 10.1021/nl2035089
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“From spin induced ferroelectricity to dipolar glasses : spinel chromites and mixed delafossites”. Maignan A, Martin C, Singh K, Simon C, Lebedev OI, Turner S, Journal of solid state chemistry 195, 41 (2012). http://doi.org/10.1016/j.jssc.2012.01.063
Abstract: Magnetoelectric multiferroics showing coupling between polarization and magnetic order are attracting much attention. For instance, they could be used in memory devices. Metal-transition oxides are provided several examples of inorganic magnetoelectric multiferroics. In the present short review, spinel and delafossite chromites are described. For the former, an electric polarization is evidenced in the ferrimagnetic state for ACr2O4 polycrystalline samples (A=Ni, Fe, Co). The presence of a JahnTeller cation such as Ni2+ at the A site is shown to yield larger polarization values. In the delafossites, substitution by V3+ at the Cr or Fe site in CuCrO2 (CuFeO2) suppresses the complex antiferromagnetic structure at the benefit of a spin glass state. The presence of cation disorder, probed by transmission electron microscopy, favors relaxor-like ferroelectricity. The results on the ferroelectricity of ferrimagnets and insulating spin glasses demonstrate that, in this research field, transition-metal oxides are worth to be studied.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 27
DOI: 10.1016/j.jssc.2012.01.063
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“Classification and control of the origin of photoluminescence from Si nanocrystals”. Godefroo S, Hayne M, Jivanescu M, Stesmans A, Zacharias M, Lebedev OI, Van Tendeloo G, Moshchalkov VV, Nature nanotechnology 3, 174 (2008). http://doi.org/10.1038/nnano.2008.7
Abstract: Silicon dominates the electronics industry, but its poor optical properties mean that III-V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they arise from highly localized defect states or quantum confinement effects?) has been the subject of intense debate ever since. Attention has subsequently shifted from porous Si to Si nanocrystals, but the same fundamental question about the origin of the photoluminescence has remained. Here we show, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals. Moreover, we show that it is possible to control the origin of the photoluminescence in a single sample: passivation with hydrogen removes the defects, resulting in photoluminescence from quantum-confined states, but subsequent ultraviolet illumination reintroduces the defects, making them the origin of the light again.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 38.986
Times cited: 426
DOI: 10.1038/nnano.2008.7
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“Novel MoVSbOx-type catalysts for selective isobutane oxidation”. Paul JS, Groothaert MH, Kirschhock CEA, Lebedev OI, Jacobs PA, Maier WF, Catalysis today
T2 –, 7th European Workshop Meeting on Selective Oxidation, AUG 31-SEP 04, 2003, Innsbruck, AUSTRIA 91-2, 265 (2004). http://doi.org/10.1016/j.cattod.2004.03.041
Abstract: A new sol-gel synthesis procedure is proposed for the preparation of MoVSbOx catalysts for the selective oxidation of isobutane. Physico-chemical characterization of the materials calcined at 400 degreesC, showed essentially amorphous catalysts, with long-range order. Increase of calcination temperature, however, resulted in the formation of small crystalline regions, confirmed through TEM. EPR measurements on the calcined samples pointed to the presence of isolated and magnetically interacting V(IV) species. The reported catalysts proved to be much more selective for partial oxidation compared to a literature reference catalyst. Furthermore, it is shown that this versatile synthesis recipe forms an excellent start for high-throughput and combinatorial studies. (C) 2004 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.636
Times cited: 12
DOI: 10.1016/j.cattod.2004.03.041
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“The superconducting bismuth-based mixed oxides”. Antipov EV, Khasanova NR, Pshirkov JS, Putilin SN, Bougerof C, Lebedev OI, Van Tendeloo G, Baranov A, Park YW, Journal of low temperature physics
T2 –, International Conference on Physics and Chemistry of Molecular and Oxide, Superconductors (MOS2002), AUG 13-18, 2002, HSINCHU, TAIWAN 131, 575 (2003). http://doi.org/10.1023/A:1022923924607
Abstract: The present paper describes the synthesis, characterization of mixed-valence bismuthates with 3- or 2-dimensional perovskite-like structures and structural criteria that influence superconductivity in these compounds. Single-phase samples of Sr1-xKxBiO3 were prepared for the broad range of K-content: 0.25 less than or equal to x less than or equal to 0.65. For these bismuthates the symmetry of the structure changes from monoclinic to orthorhombic and finally to tetragonal upon increasing the K-content thus resulting in the decrease of the Bi-O distances and reduction of the network distortions. Superconductivity with maximum T-c = 12K exists in the narrow range (x approximate to 0.5 – 0.6) within the stability field of the tetragonal phase (0.33 less than or equal to x less than or equal to 0.65), when the 3-dimensional octahedral framework has close to the ideal perovskite structure arrangement. At the same time compositions with close to optimal Bi-valence (x = 0.33 and 0.43) do not show any sign of superconductivity, probably, due to structural distortions. The layered type (BaK)(3)Bi2O7 and (Ba,K)(2)BiO4 bismuthates belonging to the A(n+1)B(n)O(3n+1) homologous series were investigated Buckling of the (BiO2) layers in the structure of the n = 2 member was revealed The formation of the n=1 bismuthate was found by Electron Microscopy and X-ray powder diffraction studies. Both types of compounds are considered to be possible candidates for new superconducting materials among bismuthates.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.3
Times cited: 3
DOI: 10.1023/A:1022923924607
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“A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction”. Verbist K, Lebedev OI, Van Tendeloo G, Tafuri F, Granozio FM, Di Chiara A, Bender H, Applied physics letters 74, 1024 (1999). http://doi.org/10.1063/1.123443
Abstract: A method to correlate microstructure from cross-section transmission electron microscopy (TEM) investigations and transport properties of a single well characterized high-T-c artificial grain boundary junction is reported. A YBa2Cu3O7-delta 45 degrees twist junction exhibiting the typical phenomenology of high T-c Josephson weak links was employed. The TEM sample preparation is based on focused ion beam etching and allows to easily localize the electron transparent area on a microbridge. The reported technique opens clear perspectives in the determination of the microstructural origin of variations in Josephson junction properties, such as the spread in I-c and IcRN values and the presence of different transport regimes in nominally identical junctions. (C) 1999 American Institute of Physics. [S0003-6951(99)03404-X].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 5
DOI: 10.1063/1.123443
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“Evidence of strain induced structural change in hetero-epitaxial NdNiO3 thin films with metal-insulator transition”. Laffez P, Lebedev OI, Ruello P, Desfeux R, Banerjee G, Capon F, European physical journal: applied physics 25, 25 (2004). http://doi.org/10.1051/epjap:2003087
Abstract: Neodymium nickelate thin films have been prepared on NdGaO3 substrates by RF magnetron sputtering and post-annealing treatment under oxygen pressure. Transport properties are found to depend strongly on film thickness. Thick films show transport properties close to bulk ceramics, while very thin films exhibit a large transition from metal to insulator which occurs over a wide temperature range with high resistivity. Structure and surface morphology of the films have been investigated by Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM). Thin films (approximate to17 nm) grow heteroepitaxially, while thicker films (approximate to73 nm) show a granular structure. The thinnest sample suggests a symmetry change induced by the epitaxial strain of the substrate. This paper discusses the relationship between microstructure and transport properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.684
Times cited: 12
DOI: 10.1051/epjap:2003087
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“The superconducting bismuth-based mixed oxides”. Antipov EV, Khasanova NR, Pshirkov JS, Putilin SN, Bougerol C, Lebedev OI, Van Tendeloo G, Baranov AN, Park YW, Current applied physics
T2 –, QTSM and QFS 02 Symposium, MAY 08-10, 2002, SEOUL, SOUTH KOREA 2, 425 (2002). http://doi.org/10.1016/S1567-1739(02)00105-0
Abstract: The present paper describes the synthesis, characterization of mixed-valence bismuthates with three- or two-dimensional perovskite-like structures and structural criteria that influence superconductivity in these compounds. Single-phase samples of Sr1-xKxBiO3 were prepared for the broad range of K-content: 0.25 less than or equal to x less than or equal to 0.65. For these bismuthates the symmetry of the structure changes from monoclinic to orthorhombic and finally to tetragonal upon increasing the K-content thus resulting in the decrease of the Bi-O distances and reduction of the network distortions. Superconductivity with maximum T-c = 12 K exists in the narrow range (x approximate to 0.5-0.6) within the stability field of the tetragonal phase (0.33 less than or equal to x less than or equal to 0.65), when the three-dimensional octahedral framework has close to the ideal perovskite structure arrangement. The layered type (Ba,K)(3)Bi2O7 and (Ba,K)(2)BiO4 bismuthates belonging to the A(n+1)B(n)O(3n+1) homologous series were investigated. Buckling of the (BiO2) layers in the structure of the n = 2 member occurs due to the ordering of alkaline- and alkaline-earth cations between two independent positions. The formation of the one-layer bismuthate was revealed by Electron Microscopy and XRPD studies. Both types of compounds are considered to be possible candidates for new superconducting materials among bismuthates. (C) 2002 Published by Elsevier Science B.V.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.971
Times cited: 2
DOI: 10.1016/S1567-1739(02)00105-0
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“In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Mironov OA, Parker EHC, Physical review : B : condensed matter and materials physics 61, 10336 (2000). http://doi.org/10.1103/PhysRevB.61.10336
Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.61.10336
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