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  Author (up) Title Year Publication Volume Times cited Additional Links Links
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. The study of partially ordered 11/20 alloys by HREM 1993 Microscopy research and technique 25 UA library record; WoS full record pdf doi
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; Mommaert, C.; Severne, G. Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy 1993 Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 67 1 UA library record; https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993; WoS full record; WoS citing articles pdf doi
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. On the interpretation of HREM images of partially ordered alloys 1995 Ultramicroscopy 60 20 UA library record; WoS full record; WoS citing articles pdf doi
Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. Defects in high-dose oxygen implanted silicon : a TEM study 1991 Vacuum: the international journal and abstracting service for vacuum science and technology T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND 42 4 UA library record; WoS full record; WoS citing articles pdf doi
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy 1992 Applied physics letters 60 20 UA library record; WoS full record; WoS citing articles pdf doi
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy 1992 Applied physics letters 600 32 UA library record; WoS full record; WoS citing articles pdf doi
Fanidis, C.; van Dyck, D.; van Landuyt, J. Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: 1: theoretical framework 1992 Ultramicroscopy 41 17 UA library record; WoS full record; WoS citing articles doi
Fanidis, C.; van Dyck, D.; van Landuyt, J. Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: part 2: solution of the equations and applications to concrete cases 1993 Ultramicroscopy 48 6 UA library record; WoS full record; WoS citing articles
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation 1999 Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM 1999 Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171 40 UA library record; WoS full record; WoS citing articles doi
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM 1999 Physica status solidi: A: applied research 171 40 UA library record; WoS full record; WoS citing articles
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation 1997 UA library record
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. New intermediate defect configuration in Si studied by in situ HREM irradiation 1997 Conference series of the Institute of Physics 157 UA library record; WoS full record;
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope 1998 Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 77 23 UA library record; WoS full record; WoS citing articles
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J. In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure 1997 Conference series of the Institute of Physics 157 1 UA library record; WoS full record; WoS citing articles
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures 2000 Physical review : B : condensed matter and materials physics 61 27 UA library record; WoS full record; WoS citing articles url doi
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope 1996 Materials Research Society symposium proceedings 404 1 UA library record; WoS full record; WoS citing articles
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope 1996 Nuclear instruments and methods in physics research B112 4 UA library record; WoS full record; WoS citing articles doi
Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J. Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application 2000 Sensors and actuators : B : chemical 68 51 UA library record; WoS full record; WoS citing articles doi
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. Ion beam synthesis of β-SiC at 9500C and structural characterization 1996 Nuclear instruments and methods in physics research B112 UA library record
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization 1996 Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr 112 9 UA library record; WoS full record; WoS citing articles doi
Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study 1997 Journal of crystal growth 181 9 UA library record; WoS full record; WoS citing articles
Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ 1996 Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France 120 2 UA library record; WoS full record; WoS citing articles doi
Frangis, N.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction 1997 Journal of crystal growth 172 29 UA library record; WoS full record; WoS citing articles
Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing 1998 Applied physics letters 72 16 UA library record; WoS full record; WoS citing articles pdf doi
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. New erbium silicide superstructures: a study by high resolution electron microscopy 1996 Physica status solidi: A: applied research 158 6 UA library record; WoS full record; WoS citing articles
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate 1996 Applied surface science 102 9 UA library record; WoS full record; WoS citing articles doi
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. Structural characterisation of erbium silicide thin films of an Si(111) substrate 1996 Journal of alloys and compounds 234 14 UA library record; WoS full record; WoS citing articles pdf doi
Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates 2001 Journal of materials research 16 4 UA library record; WoS full record; WoS citing articles doi
Goessens, C.; Schryvers, D.; de Keyzer, R.; van Landuyt, J. In situ HREM study of electron irradiation effects in AgCl microcrystals 1992 UA library record
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