Abstract: Annular objective apertures are fabricated for a CM300 transmission electron microscope using a focused ion beam system. A central beam stop in the back focal plane of the objective lens of the microscope blocks all electrons scattered up to a semi-angle of approximately 20 mrad. In this manner, contributions to the image from Bragg scattering are largely reduced and the image contrast is sensitive to the atomic number Z. Experimentally, we find that single atom scattering cross sections measured with this technique are close to Rutherford scattering values. A comparison between this new method and STEM-HAADF shows that both techniques result in qualitatively similar images although the resolution of ADF-TEM is limited by contrast delocalization caused by the spherical aberration of the objective lens. This problem can be overcome by using an aberration corrected microscope.

Abstract: We report the complete disappearance of the structural modulation in heavily lead-doped Bi2-xPbxSr2CaCu2O8+delta crystals observed by transmission electron microscopy. Crystals with a nominal lead content of x = 0.8, corresponding to an effective lead content of x = 0.39, yield the non-modulated phase. The superconducting properties of this modulation-free phase (beta phase) have been studied and compared to those of undoped crystals displaying the modulated phase (alpha phase). Magnetisation measurements reveal that the irreversibility field H-irr(T) and relaxation rates are strongly improved within the beta phase. Measurements of the lower critical field, H-c1, show that the anisotropy factor, epsilon, is considerably reduced in the modulation-free crystals. This is the signature of stronger coupling between CuO2 layers which in turn deeply influences the effectiveness of the pinning. These measurements explain the enhanced pinning properties in moderately Pb-doped crystals in which the alpha phase and beta phase coexist. The enhanced pinning is not only due to the alpha/beta interfaces, which act as effective pinning centers: the emergence of modulation-free domains, characterized by a strongly reduced anisotropy, also significantly contribute to this effect. (C) 2003 Elsevier B.V. All rights reserved.

Abstract: Thin films of the superconducting Nd1+xBa2−xCu3O7−δ (NBCO) and Y1(NdxBa2−x)Cu3O7−δ (YNBCO) compounds have been deposited by dc magnetron sputtering and diode high pressure oxygen sputtering. Different techniques, including scanning tunneling microscopy, atomic force microscopy, X-ray diffraction and transmission electron microscopy (TEM) have been used to study the film microstructures and the surface morphology. It is shown that the Nd/Ba exchange promotes a 2D heteroepitaxial growth in the case of the NBCO films deposited on (1 0 0) SrTiO3 substrates, with a suppression of the characteristic 3D spirals structures. On the contrary in YNBCO the Nd/Ba exchange does not provide a driving force for the suppression of screw-dislocations, since spirals or towers originated by screw and half loop dislocations are observed on the surface. TEM reveals that anti-phase boundaries are eliminated during the growth of NBCO films thanks to the Nd/Ba exchange while this mechanism is not operating in the case of YNBCO films.

Abstract: The problem of the epitaxial growth of the high temperature superconducting R1+xBa2xCu3O7δ (R = Y or rare earth except Ce and Tb) films has been addressed. Using in situ ultra high vacuum Scanning Tunneling Microscopy (UHV-STM) we have studied the role of cationic substitution and substrate mismatch on the growth mode of stoichiometric and Nd-rich Nd1+xBa2xCu3O7δ thin films. The results are compared to the growth of Y1Ba2Cu3O7δ, Dy1Ba2Cu3O7δ and Gd1Ba2Cu3O7δ epitaxial films. Two main phenomena are investigated: a) the first stage of the direct nucleation on the substrate and b) the crossover between 2D and 3D growth upon increasing the film thickness. At the first stage of the growth, pseudo-cubic perovskite (Re,Ba)CuO3 nuclei are formed. While they disappear after the growth of a few nm in stoichiometric films, they persist on the surface of Nd-rich films of up to 110 nm thickness. Stoichiometric R1+xBa2xCu3O7δ films exhibit a rough morphology with increasing thickness due to island growth mode, whereas Nd-rich films remain smooth and continue to grow layer by layer. It is proposed that linear defects (like anti-phase boundaries), which are formed due to the misalignment of growth fronts, are the source of screw dislocations in stoichiometric films. In Nd-rich films, linear defects are eliminated through the insertion of (Nd,Ba)CuO3 extra layers without introduction of any screw dislocations.

Abstract: Using pulsed laser deposition ultra-thin DyBa2Cu3O7-x films were deposited on a single terminated (0 0 1) SrTiOr(3) substrate. The initial growth was studied by high-resolution electron microscopy. Two different types of interface arrangements occur and were determined as: bulk-SrO-TiO2-BaO-CuO-BaO-CuO2-Dy-CuO2-BaO bulk and bulk-SrO-TiO2-BaO-CuO2-Dy-CuO2-BaO-CuO-BaO-bulk This variable growth sequence causes structural shifts, resulting in antiphase boundaries with displacement vector R = [0 0 1/3]. as well as local chemical variations. (C) 2001 Elsevier Science B.V. All rights reserved.