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\bibitem{Vohra_etal2020} {\textquotedblleft}\textit{Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge$_{1-x}$Sn$_{x}$ and Si$_{y}$Ge$_{1-x-y}$Sn$_{x}$}{\textquotedblright}. Vohra A, Makkonen I, Pourtois G, Slotte J, Porret C, Rosseel E, Khanam A, Tirrito M, Douhard B, Loo R, Vandervorst W, Ecs Journal Of Solid State Science And Technology \textbf{9}, 044010 (2020).   http://doi.org/10.1149/2162-8777/AB8D91

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