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\bibitem{Li_etal2018} {\textquotedblleft}\textit{Epitaxial stress-free growth of high crystallinity ferroelectric PbZr$_{0.52}$Ti$_{0.48}$O$_{3}$ on GaN/AlGaN/Si(111) substrate}{\textquotedblright}. Li L, Liao Z, Gauquelin N, Minh Duc Nguyen, Hueting RJE, Gravesteijn DJ, Lobato I, Houwman EP, Lazar S, Verbeeck J, Koster G, Rijnders G, Advanced Materials Interfaces \textbf{5}, 1700921 (2018).   http://doi.org/10.1002/ADMI.201700921

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