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\bibitem{Clima_etal2015} {\textquotedblleft}\textit{Intrinsic tailing of resistive states distributions in amorphous <tex>HfO$_{x}$ </tex> and TaO$_{x}$ based resistive random access memories}{\textquotedblright}. Clima S, Chen YY, Fantini A, Goux L, Degraeve R, Govoreanu B, Pourtois G, Jurczak M, IEEE electron device letters \textbf{36}, 769 (2015).   http://doi.org/10.1109/LED.2015.2448731

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