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\bibitem{Loo_etal2017} {\textquotedblleft}\textit{Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures}{\textquotedblright}. Loo R, Arimura H, Cott D, Witters L, Pourtois G, Schulze A, Douhard B, Vanherle W, Eneman G, Richard O, Favia P, Mitard J, Mocuta D, Langer R, Collaert N, Semiconductor Process Integration 10 , 241 (2017).   http://doi.org/10.1149/08004.0241ECST

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