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\bibitem{Pham_etal2011} {\textquotedblleft}\textit{Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current}{\textquotedblright}. Pham A-T, Zhao Q-T, Jungemann C, Meinerzhagen B, Mantl S, Sor{\'e}e B, Pourtois G, Solid state electronics \textbf{65-66}, 64 (2011).   http://doi.org/10.1016/j.sse.2011.06.021

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