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\bibitem{Lubyshev_etal2004} {\textquotedblleft}\textit{Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications}{\textquotedblright}. Lubyshev D, Fastenau JM, Fang X-M, Wu Y, Doss C, Snyder A, Liu WK, Lamb MSM, Bals S, Song C, Journal of vacuum science \& technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena \textbf{22}, 1565 (2004).   http://doi.org/10.1116/1.1691412

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