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\bibitem{Farvacque_etal1999} {\textquotedblleft}\textit{Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE}{\textquotedblright}. Farvacque JL, Bougrioua Z, Moerman I, Van Tendeloo G, Lebedev O, Physica: B : condensed matter
T2 -- 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA \textbf{273-4}, 140 (1999).   http://doi.org/10.1016/S0921-4526(99)00431-7

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