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\bibitem{VanDaele_etal2006} {\textquotedblleft}\textit{Mechanism for Ohmic contact formation on Si$_{3}$N$_{4}$ passivated AlGaN/GaN high-electron-mobility transistors}{\textquotedblright}.  Van Daele B, Van Tendeloo G, Derluyn J, Shrivastava P, Lorenz A, Leys MR, Germain M;, Applied physics letters \textbf{89}, Artn 201908 (2006).   http://doi.org/10.1063/1.2388889

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