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\bibitem{Chen_etal2012} {\textquotedblleft}\textit{Insights into Ni-filament formation in unipolar-switching Ni/HfO$_{2}$/TiN resistive random access memory device}{\textquotedblright}. Chen YY, Pourtois G, Adelmann C, Goux L, Govoreanu B, Degreave R, Jurczak M, Kittl JA, Groeseneken G, Wouters DJ, Applied physics letters \textbf{100}, 113513 (2012).   http://doi.org/10.1063/1.3695078

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