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\bibitem{Germain_etal2004} {\textquotedblleft}\textit{High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers}{\textquotedblright}. Germain M, Leys M, Boeykens S, Degroote S, Wang W, Schreurs D, Ruythooren W, Choi K-H, van Daele B, Van Tendeloo G, Borghs G, Materials Research Society symposium proceedings \textbf{798}, Y10.22 (2004)

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