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\bibitem{Cheng_etal2006} {\textquotedblleft}\textit{Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers}{\textquotedblright}. Cheng K, Leys M, Degroote S, van Daele B, Boeykens S, Derluyn J, Germain M, Van Tendeloo G, Engelen J, Borghs G, Journal of electronic materials \textbf{35}, 592 (2006).   http://doi.org/10.1007/s11664-006-0105-1

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