| |
Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
de Keyser, A.; Bogaerts, R.; van Bockstal, L.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
Modification of the 2D electronic properties in Si-δ-doped InSb due to surface effects |
1997 |
|
|
|
UA library record |
|
|
|
Bogaerts, R.; de Keyser, A.; van Bockstal, L.; van der Burgt, M.; van Esch, A.; Provoost, R.; Silverans, R.; Herlach, F.; Swinnen, B.; van de Stadt, A.F.W.; Koenraad, P.M.; Wolter, J.H.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
2D semiconductors at the Leuven pulsed field facility |
1997 |
Physicalia magazine |
19 |
|
UA library record |
|
|
|
Bogaerts, R.; Herlach, F.; de Keyser, A.; Peeters, F.M.; DeRosa, F.; Palmstrøm, C.J.; Brehmer, D.; Allen, S.J. |
Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields |
1996 |
Physical review : B : condensed matter and materials physics |
53 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
|
de Keyser, A.; Bogaerts, R.; Karavolas, V.C.; van Bockstal, L.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs |
1996 |
Solid state electronics |
40 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; Van de Graaf, W.; Borghs, G. |
Cyclotron-resonance of 2d electrons at Si-\delta-doped InSb layers grown on GaAs |
1995 |
Physica: B : condensed matter |
211 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
de Keyser, A.; Bogaerts, R.; van Bockstal, L.; Hoeks, W.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
Magnetotransport properties of Si-δ-doped InSb layers grown on GaAs |
1995 |
Physica: B : condensed matter |
211 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
Cyclotron-resonance of 2D electrons at Si-δ-doped InSb layers grown on GaAs |
1995 |
Physica: B : condensed matter |
211 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Bogaerts, R.; de Keyser, A.; van Bockstal, L.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; Borghs, G. |
Magnetic freeze-out induced transition from three- to two-dimensional magnetotransport in Si-δ-doped InSb layers grown on GaAs |
1995 |
|
|
|
UA library record |
|
|
|
Bogaerts, R.; de Keyser, A.; Herlach, F.; Peeters, F.M.; DeRosa, F.; Palmstrøm, C.J.; Brehmer, D.; Allen, S.J. |
Quantum oscillations in the Hall effect of thin Sc1-xErxAs epitaxial layers burried in GaAs |
1995 |
|
|
|
UA library record |
|
|
|
Bogaerts, R.; de Keyser, A.; Herlach, F.; Peeters, F.M.; DeRosa, F.; Palmstrøm, C.J.; Brehmer, D.; Allen, S.J. |
Size effects in the transport properties of thin Sc1-xErxAs epitaxial layers buried in GaAs |
1994 |
Solid state electronics |
37 |
4 |
UA library record; WoS full record; WoS citing articles |
|
