|  | Author | Title | Year  | Publication | Volume | Times cited | Additional Links | Links | 
	|  | Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W. | Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers | 2019 | ECS journal of solid state science and technology | 8 |  | UA library record; WoS full record |     | 
	|  | Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. | On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications | 2018 | ECS journal of solid state science and technology | 7 | 4 | UA library record; WoS full record; WoS citing articles |     | 
	|  | Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. | Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides | 2016 | Journal of applied physics | 120 | 6 | UA library record; WoS full record; WoS citing articles |     | 
	|  | Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; | On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films | 2016 | Applied physics letters | 108 | 9 | UA library record; WoS full record; WoS citing articles |     | 
	|  | Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; | InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models | 2014 | Journal of applied physics | 115 | 34 | UA library record; WoS full record; WoS citing articles |   | 
	|  | de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. | Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy | 2004 | Journal of the electrochemical society | 151 | 13 | UA library record; WoS full record; WoS citing articles |     | 
	|  | de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. | A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon | 2003 | Physica: B : condensed matter
T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK | 340 | 4 | UA library record; WoS full record; WoS citing articles |   | 
	|  | Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. | Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon | 2002 | Journal of physics : condensed matter
T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY | 14 | 3 | UA library record; WoS full record; WoS citing articles |       | 
	|  | Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. | Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques | 2002 | Journal of applied physics | 91 | 27 | UA library record; WoS full record; WoS citing articles |     | 
	|  | De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. | Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy | 2002 |  |  |  | UA library record; WoS full record; |  | 
	|  | de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. | Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM | 2001 | Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY | 308 | 3 | UA library record; WoS full record; WoS citing articles |     |