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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Mary Joy, R.; Pobedinskas, P.; Baule, N.; Bai, S.; Jannis, D.; Gauquelin, N.; Pinault-Thaury, M.-A.; Jomard, F.; Sankaran, K.J.; Rouzbahani, R.; Lloret, F.; Desta, D.; D’Haen, J.; Verbeeck, J.; Becker, M.F.; Haenen, K. The effect of microstructure and film composition on the mechanical properties of linear antenna CVD diamond thin films 2024 Acta materialia 264 UA library record; WoS full record; WoS citing articles pdf url doi
Yu, S.; Sankaran, K.J.; Korneychuk, S.; Verbeeck, J.; Haenen, K.; Jiang, X.; Yang, N. High-performance supercabatteries using graphite@diamond nano-needle capacitor electrodes and redox electrolytes 2019 Nanoscale 11 26 UA library record; WoS full record; WoS citing articles url doi
Adelmann, C.; Sankaran, K.; Dutta, S.; Gupta, A.; Kundu, S.; Jamieson, G.; Moors, K.; Pinna, N.; Ciofi, I.; Van Elshocht, S.; Bommels, J.; Boccardi, G.; Wilson, C.J.; Pourtois, G.; Tokei, Z. Alternative Metals: from ab initio Screening to Calibrated Narrow Line Models 2018 Proceedings of the IEEE ... International Interconnect Technology Conference T2 – IEEE International Interconnect Technology Conference (IITC), JUN 04-07, 2018, Santa Clara, CA UA library record; WoS full record; WoS citing articles pdf doi
Sankaran, K.J.; Deshmukh, S.; Korneychuk, S.; Yeh, C.-J.; Thomas, J.P.; Drijkoningen, S.; Pobedinskas, P.; Van Bael, M.K.; Verbeeck, J.; Leou, K.-C.; Leung, K.-T.; Roy, S.S.; Lin, I.-N.; Haenen, K. Fabrication, microstructure, and enhanced thermionic electron emission properties of vertically aligned nitrogen-doped nanocrystalline diamond nanorods 2018 MRS communications 8 1 UA library record; WoS full record; WoS citing articles pdf doi
Deshmukh, S.; Sankaran, K.J.; Korneychuk, S.; Verbeeck, J.; Mclaughlin, J.; Haenen, K.; Roy, S.S. Nanostructured nitrogen doped diamond for the detection of toxic metal ions 2018 Electrochimica acta 283 22 UA library record; WoS full record; WoS citing articles doi
Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations 2018 ECS journal of solid state science and technology 7 2 UA library record; WoS full record; WoS citing articles doi
De Clercq, M.; Moors, K.; Sankaran, K.; Pourtois, G.; Dutta, S.; Adelmann, C.; Magnus, W.; Sorée, B. Resistivity scaling model for metals with conduction band anisotropy 2018 Physical review materials 2 UA library record; WoS full record; WoS citing articles url doi
Deshmukh, S.; Sankaran, K.J.; Srinivasu, K.; Korneychuk, S.; Banerjee, D.; Barman, A.; Bhattacharya, G.; Phase, D.M.; Gupta, M.; Verbeeck, J.; Leou, K.C.; Lin, I.N.; Haenen, K.; Roy, S.S. Local probing of the enhanced field electron emission of vertically aligned nitrogen-doped diamond nanorods and their plasma illumination properties 2018 Diamond and related materials 83 9 UA library record; WoS full record; WoS citing articles pdf doi
Sankaran, K.; Moors, K.; Dutta, S.; Adelmann, C.; Tokei, Z.; Pourtois, G. Metallic ceramics for low resitivity interconnects : an ab initio insight 2018 Proceedings of the IEEE ... International Interconnect Technology Conference T2 – IEEE International Interconnect Technology Conference (IITC), JUN 04-07, 2018, Santa Clara, CA UA library record; WoS full record; WoS citing articles pdf
Sankaran, K.; Swerts, J.; Carpenter, R.; Couet, S.; Garello, K.; Evans, R.F.L.; Rao, S.; Kim, W.; Kundu, S.; Crotti, D.; Kar, G.S.; Pourtois, G. Evidence of magnetostrictive effects on STT-MRAM performance by atomistic and spin modeling 2018 2018 Ieee International Electron Devices Meeting (iedm) UA library record; WoS full record; WoS citing articles
Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations 2017 Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar 1 UA library record; WoS full record; WoS citing articles pdf doi
Dutta, S.; Sankaran, K.; Moors, K.; Pourtois, G.; Van Elshocht, S.; Bommels, J.; Vandervorst, W.; Tokei, Z.; Adelmann, C. Thickness dependence of the resistivity of platinum-group metal thin films 2017 Journal of applied physics 122 42 UA library record; WoS full record; WoS citing articles doi
Ramaneti, R.; Sankaran, K.J.; Korneychuk, S.; Yeh, C.J.; Degutis, G.; Leou, K.C.; Verbeeck, J.; Van Bael, M.K.; Lin, I.N.; Haenen, K. Vertically aligned diamond-graphite hybrid nanorod arrays with superior field electron emission properties 2017 APL materials 5 16 UA library record; WoS full record; WoS citing articles url doi
Hoang, D.-Q.; Korneychuk, S.; Sankaran, K.J.; Pobedinskas, P.; Drijkoningen, S.; Turner, S.; Van Bael, M.K.; Verbeeck, J.; Nicley, S.S.; Haenen, K. Direct nucleation of hexagonal boron nitride on diamond : crystalline properties of hBN nanowalls 2017 Acta materialia 127 UA library record; ; WoS full record; WoS citing articles pdf doi
Sankaran, K.J.; Hoang, D.Q.; Srinivasu, K.; Korneychuk, S.; Turner, S.; Drijkoningen, S.; Pobedinskas, P.; Verbeeck, J.; Leou, K.C.; Lin, I.N.; Haenen, K. 2016 Physica status solidi : A : applications and materials science 213 5 UA library record; WoS full record; WoS citing articles pdf doi
Sankaran, K.; Swerts, J.; Couet, S.; Stokbro, K.; Pourtois, G. Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta vertical bar CoFe vertical bar MgO magnetic tunnel junctions : a first-principles study 2016 Physical review B 94 4 UA library record; WoS full record; WoS citing articles url doi
Sankaran, K.J.; Duc Quang Hoang; Korneychuk, S.; Kunuku, S.; Thomas, J.P.; Pobedinskas, P.; Drijkoningen, S.; Van Bael, M.K.; D'Haen, J.; Verbeeck, J.; Leou, K.-C.; Leung, K.T.; Lin, I.-N.; Haenen, K. Hierarchical hexagonal boron nitride nanowall-diamond nanorod heterostructures with enhanced optoelectronic performance 2016 RSC advances 6 8 UA library record; WoS full record; WoS citing articles doi
Sankaran, K.J.; Hoang, D.Q.; Kunuku, S.; Korneychuk, S.; Turner, S.; Pobedinskas, P.; Drijkoningen, S.; Van Bael, M.K.; D' Haen, J.; Verbeeck, J.; Leou, K.-C.; Lin, I.-N.; Haenen, K. Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures 2016 Scientific reports 6 15 UA library record; WoS full record; WoS citing articles url doi
Sankaran, K.; Clima, S.; Mees, M.; Pourtois, G. Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations 2015 ECS journal of solid state science and technology 4 19 UA library record; WoS full record; WoS citing articles url doi
Clima, S.; Sankaran, K.; Chen, Y.Y.; Fantini, A.; Celano, U.; Belmonte, A.; Zhang, L.; Goux, L.; Govoreanu, B.; Degraeve, R.; Wouters, D.J.; Jurczak, M.; Vandervorst, W.; Gendt, S.D.; Pourtois, G.; RRAMs based on anionic and cationic switching : a short overview 2014 Physica status solidi: rapid research letters 8 28 UA library record; WoS full record; WoS citing articles doi
Sankaran, K.; Clima, S.; Mees, M.; Adelmann, C.; Tokei, Z.; Pourtois, G. Exploring alternative metals to Cu and W for interconnects : an ab initio Insight 2014 2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) UA library record; WoS full record;
Clima, S.; Chen, Y.Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G. First-principles simulation of oxygen diffusion in HfOx : role in the resistive switching mechanism 2012 Applied physics letters 100 63 UA library record; WoS full record; WoS citing articles doi
Stankovski, M.; Antonius, G.; Waroquiers, D.; Miglio, A.; Dixit, H.; Sankaran, K.; Giantomassi, M.; Gonze, X.; Côté, M.; Rignanese, G.-M. G0W0 band gap of ZnO : effects of plasmon-pole models 2011 Physical review : B : condensed matter and materials physics 84 81 UA library record; WoS full record; WoS citing articles url doi
Houssa, M.; Scalise, E.; Sankaran, K.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Electronic properties of hydrogenated silicene and germanene 2011 Applied physics letters 98 63 UA library record; WoS full record; WoS citing articles doi
Sankaran, K.; Pourtois, G.; Degraeve, R.; Zahid, M.B.; Rignanese, G.-M.; Van Houdt, J. First-principles modeling of intrinsic and extrinsic defects in \gamma-Al2O3 2010 Applied physics letters 97 12 UA library record; WoS full record; WoS citing articles doi
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