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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. |
Self-consistent procedure including envelope function normalization for full-zone Schrodinger-Poisson problems with transmitting boundary conditions |
2018 |
Journal of applied physics |
124 |
1 |
UA library record; WoS full record; WoS citing articles |
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Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. |
Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors |
2017 |
Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017) |
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UA library record; WoS full record |
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Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. |
Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides |
2016 |
Journal of applied physics |
120 |
6 |
UA library record; WoS full record; WoS citing articles |
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Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. |
Uniform strain in heterostructure tunnel field-effect transistors |
2016 |
IEEE electron device letters |
37 |
17 |
UA library record; WoS full record; WoS citing articles |
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Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. |
Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors |
2016 |
Solid-State Device Research (ESSDERC), European Conference
T2 – 46th European Solid-State Device Research Conference (ESSDERC) / 42nd, European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND |
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UA library record; WoS full record |
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Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. |
Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors |
2015 |
Journal of applied physics |
118 |
9 |
UA library record; WoS full record; WoS citing articles |
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Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. |
Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic |
2014 |
Applied physics letters |
105 |
10 |
UA library record; WoS full record; WoS citing articles |
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Toledano-Luque, M.; Matagne, P.; Sibaja-Hernandez, A.; Chiarella, T.; Ragnarsson, L.-A.; Sorée, B.; Cho, M.; Mocuta, A.; Thean, A. |
Superior reliability of junctionless pFinFETs by reduced oxide electric field |
2014 |
IEEE electron device letters |
35 |
13 |
UA library record; WoS full record; WoS citing articles |
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Verhulst, A.S.; Verreck, D.; Smets, Q.; Kao, K.-H.; Van de Put, M.; Rooyackers, R.; Sorée, B.; Vandooren, A.; De Meyer, K.; Groeseneken, G.; Heyns, M.M.; Mocuta, A.; Collaert, N.; Thean, A.V.-Y. |
Perspective of tunnel-FET for future low-power technology nodes |
2014 |
2014 Ieee International Electron Devices Meeting (iedm) |
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UA library record; WoS full record |
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