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	Author	Title	Year	Publication	Volume	Times cited	Additional Links	Links
	Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.;	Mechanism for Ohmic contact formation on Si₃N₄ passivated AlGaN/GaN high-electron-mobility transistors	2006	Applied physics letters	89	15	UA library record; WoS full record; WoS citing articles
	van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M.	Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN	2005	Springer proceedings in physics	107		UA library record; WoS full record;

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