|
Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
Xu, W.; Peeters, F.M.; Devreese, J.T.; Leadley, D.R.; Nicholas, R.J. |
Destruction of magnetophonon resonance in high magnetic fields from impurity and phonon scattering in heterojunctions |
1996 |
International journal of modern physics: B: condensed matter physics, statistical physics, applied physics |
10 |
11 |
UA library record; WoS full record; WoS citing articles |
|
|
Leadley, D.R.; Nicholas, R.J.; Singleton, J.; Xu, W.; Peeters, F.M.; Devreese, J.T.; van Bockstal, L.; Herlach, F.; Perenboom, J.A.A.J.; Harris, J.J.; Foxon, C.T. |
Disappearance of magnetophonon resonance at high magnetic fields in GaAs-GaAlAs heterojunctions |
1994 |
Surface science : a journal devoted to the physics and chemistry of interfaces |
305 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
Leadley, D.R.; Nicholas, R.J.; Singleton, J.; Xu, W.; Peeters, F.M.; Devreese, J.T.; Perenboom, J.A.A.J.; van Bockstal, L.; Herlach, F.; Harris, J.J.; Foxon, C.T. |
Collapse of high field magnetophonon resonance in GaAs-GaAlAs heterojunctions |
1994 |
Physical review letters |
73 |
24 |
UA library record; WoS full record; WoS citing articles |
|
|
Xu, W.; Leadley, D.R.; Peeters, F.M.; Devreese, J.T.; Nicholas, R.J.; Harris, J.J.; Foxon, C.T. |
Destruction of magnetophonon resonance in high mobility heterojunctions from competition between elastic and inelastic scattering |
1994 |
Proceedings of the International Conference on the Physics of Semiconductors |
22 |
|
UA library record |
|
|
Leadley, D.R.; Nicholas, R.J.; Xu, W.; Peeters, F.M.; Devreese, J.T.; Foxon, C.T.; Harris, J.J. |
High-field magneto-resistance in GaAs-GaAlAs heterojunctions |
1993 |
Physica: B : condensed matter |
184 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
Leadley, D.R.; Nicholas, R.J.; Xu, W.; Peeters, F.M.; Devreese, J.T.; Singleton, J.; Perenboom, J.A.; van Bockstal, L.; Herlach, F.; Foxon, C.T.; Harris, J.J. |
High-field magnetoresistance in GaAs/Ga0.7Al0.3As heterojunctions arising from elastic and inelastic scattering |
1993 |
Physical review : B : condensed matter and materials physics |
48 |
22 |
UA library record; WoS full record; WoS citing articles |
|