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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
van Daele, B.; Van Tendeloo, G.; Jacobs, K.; Moerman, I.; Leys, M. |
Formation of metallic In in InGaN/GaN multiquantum wells |
2004 |
Applied physics letters |
85 |
32 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Jacobs, K.; van Daele, B.; Leys, M.; Moerman, I.; Van Tendeloo, G. |
Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures |
2003 |
Journal of crystal growth |
248 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
2000 |
Applied physics letters |
77 |
44 |
UA library record; WoS full record; WoS citing articles |
|
