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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Calogiuri, T.; Hagens, M.; Van Groenigen, J.W.; Corbett, T.; Hartmann, J.; Hendriksen, R.; Janssens, I.; Janssens, I.A.; Ledesma Dominguez, G.; Loescher, G.; Mortier, S.; Neubeck, A.; Niron, H.; Poetra, R.P.; Rieder, L.; Struyf, E.; Van Tendeloo, M.; De Schepper, T.; Verdonck, T.; Vlaeminck, S.E.; Vicca, S.; Vidal, A. |
Design and construction of an experimental setup to enhance mineral weathering through the activity of soil organisms |
2023 |
Journal of visualized experiments |
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UA library record; WoS full record |
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Grieb, T.; Tewes, M.; Schowalter, M.; Müller-Caspary, K.; Krause, F.F.; Mehrtens, T.; Hartmann, J.-M.; Rosenauer, A. |
Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation |
2018 |
Ultramicroscopy |
184 |
7 |
UA library record; WoS full record; WoS citing articles |
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Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy |
2012 |
Applied Physics Letters |
112 |
14 |
UA library record; WoS full record; WoS citing articles |
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Jalabert, D.; Pelloux-Gervais, D.; Béché, A.; Hartmann, J.M.; Gergaud, P.; Rouvière, J.L.; Canut, B. |
Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering |
2012 |
Physica Status Solidi A-Applications And Materials Science |
209 |
3 |
UA library record; WoS full record; WoS citing articles |
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Denneulin, T.; Rouvière, J.L.; Béché, A.; Py, M.; Barnes, J.P.; Rochat, N.; Hartmann, J.M.; Cooper, D. |
The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography |
2011 |
Semiconductor science and technology |
26 |
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UA library record; WoS full record; WoS citing articles |
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