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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
Interaction of a Ti-capped Co thin film with Si3N4 |
2000 |
Applied physics letters |
77 |
3 |
UA library record; WoS full record; WoS citing articles |
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|
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM |
1999 |
Physica status solidi: A: applied research
T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
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UA library record; WoS full record; |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM |
1999 |
Physica status solidi: A: applied research |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope |
1998 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
77 |
23 |
UA library record; WoS full record; WoS citing articles |
|
|
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation |
1997 |
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UA library record |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
1997 |
Conference series of the Institute of Physics |
157 |
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UA library record; WoS full record; |
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