| |
Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Cooper, D.; Denneulin, T.; Bernier, N.; Béché, A.; Rouvière, J.-L. |
Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope |
2016 |
Micron |
80 |
50 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D. |
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction |
2013 |
Applied physics letters |
103 |
53 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy |
2012 |
Applied Physics Letters |
112 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Denneulin, T.; Rouvière, J.L.; Béché, A.; Py, M.; Barnes, J.P.; Rochat, N.; Hartmann, J.M.; Cooper, D. |
The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography |
2011 |
Semiconductor science and technology |
26 |
|
UA library record; WoS full record; WoS citing articles |
|
