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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Deylgat, E.; Chen, E.; Fischetti, M.V.; Sorée, B.; Vandenberghe, W.G. |
Image-force barrier lowering in top- and side-contacted two-dimensional materials |
2022 |
Solid state electronics |
198 |
|
UA library record; WoS full record |
|
|
|
Carrillo-Nunez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
Phonon-assisted Zener tunneling in a p-n diode silicon nanowire |
2013 |
Solid state electronics |
79 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Modeling the impact of junction angles in tunnel field-effect transistors |
2012 |
Solid state electronics |
69 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pham, A.-T.; Sorée, B.; Magnus, W.; Jungemann, C.; Meinerzhagen, B.; Pourtois, G. |
Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations |
2012 |
Solid state electronics |
71 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. |
Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current |
2011 |
Solid state electronics |
65-66 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Balaban, S.N.; Pokatilov, E.P.; Fomin, V.M.; Gladilin, V.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; van Rossum, M.; Sorée, B. |
Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET |
2002 |
Solid-State Electronics |
46 |
16 |
UA library record; WoS full record; WoS citing articles |
|
|
|
de Keyser, A.; Bogaerts, R.; Karavolas, V.C.; van Bockstal, L.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs |
1996 |
Solid state electronics |
40 |
2 |
UA library record; WoS full record; WoS citing articles |
|
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Peeters, F.M.; Shi, J.M.; Devreese, J.T.; Cheng, J.-P.; McCombe, B.D.; Schaff, W. |
Resonant magneto-polarons in strongly-coupled superlattices |
1994 |
Solid state electronics |
37 |
5 |
UA library record; WoS full record; WoS citing articles |
|
|
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Helm, M.; Hilber, W.; Fromherz, T.; Peeters, F.M.; Alavi, K.; Pathak, R.N. |
Mini-band dispersion, critical points, and impurity bands in superlattices: an infrared absorption study |
1994 |
Solid state electronics |
37 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
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Bogaerts, R.; de Keyser, A.; Herlach, F.; Peeters, F.M.; DeRosa, F.; Palmstrøm, C.J.; Brehmer, D.; Allen, S.J. |
Size effects in the transport properties of thin Sc1-xErxAs epitaxial layers buried in GaAs |
1994 |
Solid state electronics |
37 |
4 |
UA library record; WoS full record; WoS citing articles |
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