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“Combined characterization of silver halide photographic systems and their components by conventional and energy-filtering TEM/EELS, STEM/EDX, SEM, and image analysis techniques”. Oleshko VP, Gijbels R, Jacob W, , 46 (1996)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals”. Buschmann V, Schryvers D, van Landuyt J, van Roost C, de Keyzer R, The journal of imaging science and technology 40, 189 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.349
Times cited: 4
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“Composite fermions in tilded magnetic fields and the effect of the confining potential width on the composite fermion effective mass”. Gee PJ, Peeters FM, Singleton J, Uji S, Aoki H, Foxon CTB, Harris JJ, Physical review : B : condensed matter and materials physics 54, R14313 (1996)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 15
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“Corrélations chimiques-géothermométriques des paramètres microchimiques des hydrothermes profonds”. Pentcheva E, Van 't dack L, Veldeman E, Gijbels R, Comptes rendus de l'Académie bulgare des sciences 49, 61 (1996)
Keywords: A3 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Critical assessment of the process of growth of a YBa2Cu3O7-\delta layer on Y2BaCuO5”. Jacques P, Verbist K, Lapin J, Ryelandt L, Van Tendeloo G, Delannay F, Superconductor science and technology 9, 176 (1996). http://doi.org/10.1088/0953-2048/9/3/008
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.325
Times cited: 1
DOI: 10.1088/0953-2048/9/3/008
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“The crystal structure of Ba8Ta6NiO24: cation ordering in hexagonal perovskites”. Abakumov AM, Van Tendeloo G, Scheglov AA, Shpanchenko RV, Antipov EV, Journal of solid state chemistry 125, 102 (1996). http://doi.org/10.1006/jssc.1996.0270
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.133
Times cited: 38
DOI: 10.1006/jssc.1996.0270
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“Destruction of magnetophonon resonance in high magnetic fields from impurity and phonon scattering in heterojunctions”. Xu W, Peeters FM, Devreese JT, Leadley DR, Nicholas RJ, International journal of modern physics: B: condensed matter physics, statistical physics, applied physics 10, 169 (1996). http://doi.org/10.1142/S0217979296000076
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 0.937
Times cited: 11
DOI: 10.1142/S0217979296000076
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“Effects of DX centers on electronic structure of a ?-doped quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, , 2355 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Effects of the DX centers on electronic structure of a δ-doped quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, , 2355 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering”. Kálna K, Mo×ko M, Peeters FM, Applied physics letters 68, 117 (1996)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.302
Times cited: 10
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“An electron microscopic study of highly oriented undoped and FeCl3-doped poly (p-phenylenevinylene)”. Zhang XB, Van Tendeloo G, van Landuyt J, van Dyck D, Briers J, Bao Y, Geise HJ, Macromolecules 29, 1554 (1996). http://doi.org/10.1021/ma9513067
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 5.8
Times cited: 10
DOI: 10.1021/ma9513067
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“Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+”. Frangis N, van Landuyt J, Grimaldi MG, Calcagno L, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France 120, 186 (1996). http://doi.org/10.1016/S0168-583X(96)00506-X
Abstract: 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 2
DOI: 10.1016/S0168-583X(96)00506-X
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“Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Applied surface science 102, 163 (1996). http://doi.org/10.1016/0169-4332(96)00040-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 9
DOI: 10.1016/0169-4332(96)00040-2
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“Electronic structure of a Si \delta-doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, Physical Review B 54, 7996 (1996). http://doi.org/10.1103/PhysRevB.54.7996
Abstract: We present a theoretical study of the electronic structure of a heavily Si delta-doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier. In this class of structures the effect of DX centers on the electronic properties can be tuned by changing the AlxGa1-xAs barrier width and/or the Al concentration, which leads to a lowering of the DX level with respect to the Fermi energy without disturbing the wave functions much. A self-consistent approach is developed in which the effective confinement potential and the Fermi energy of the system, the energies, the wave functions, and the electron densities of the discrete subbands have been obtained as a function of both the material parameters of the samples and the experimental conditions. The effect of DX centers on such structures at nonzero temperature and under an external pressure is investigated for three different models: (1) the DX(nc)(0) model with no correlation effects, (2) the d(+)/DX(0) model, and (3) the d(+)/DX(-) model with inclusion of correlation effects. In the actual calculation, influences of the background accepters, the discontinuity of the effective mass of the electrons at the interfaces of the different materials, band nonparabolicity, and the exchange-correlation energy of the electrons have been taken into account. We have found that (1) introducing a quantum barrier into delta-doped GaAs makes it possible to control the energy gaps between different electronic; subbands; (2) the electron wave functions are mon spread out when the repellent effect of the barriers is increased as compared to those in delta-doped GaAs; (3) increasing the quantum-barrier height and/or the application of hydrostatic pressure are helpful to experimentally observe the effect of the DX centers through a decrease of the total free-electron density; and (4) the correlation effects of the charged impurities are important for the systems under study.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 11
DOI: 10.1103/PhysRevB.54.7996
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“Electronic structure, screening and charging effects at a metal/organic tunneling junction: a first principles study”. Lamoen D, Ballone P, Parrinello M, Physical review B 54, 5097 (1996)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.736
Times cited: 33
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“Electrons in a periodic magnetic field”. Ibrahim IS, Peeters FM, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 341 (1996). http://doi.org/10.1016/0039-6028(96)00417-7
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 3
DOI: 10.1016/0039-6028(96)00417-7
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“Energy-filtering TEM and electron energy-loss spectroscopy of double structure tabular microcrystals of silver halide emulsions”. Oleshko V, Gijbels R, Jacob W, Journal of microscopy 183, 27 (1996). http://doi.org/10.1046/j.1365-2818.1996.73068.x
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.331
Times cited: 8
DOI: 10.1046/j.1365-2818.1996.73068.x
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“Evolution of superconducting islands in a square mesoscopic loop”. Fomin VM, Misko VR, Devreese JT, Moshchalkov VV, Phantoms newsletter 12, 7 (1996)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
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“Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields”. Bogaerts R, Herlach F, de Keyser A, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, Physical review : B : condensed matter and materials physics 53, 15951 (1996). http://doi.org/10.1103/PhysRevB.53.15951
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 9
DOI: 10.1103/PhysRevB.53.15951
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“From Bi4V2O11 to Bi4V2O10.66: the VV-VIV transformation in the Aurovillius-type framework”. Huvé, M, Vannier R-N, Nowogrocki G, Mairesse G, Van Tendeloo G, Journal of materials chemistry 6, 1339 (1996). http://doi.org/10.1039/jm9960601339
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 63
DOI: 10.1039/jm9960601339
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“Geometry and electronic structure of porphyrines and porphyrazines”. Lamoen D, Parrinello M, Chemical Physics Letters 248, 309 (1996)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.897
Times cited: 46
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“High crystalline quality erbium silicide films on (100) silicon grown in high vacuum”. Kaltsas G, Travlos A, Nassiopoulos AG, Frangis N, van Landuyt J, Applied surface science 102, 151 (1996). http://doi.org/10.1016/0169-4332(96)00036-0
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 14
DOI: 10.1016/0169-4332(96)00036-0
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“How to interpret short-range order HREM images”. De Meulenaere P, Van Tendeloo G, van Landuyt J, (1996)
Keywords: P3 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
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“HREM investigation of martensite precursor effects and stacking sequences in Ni-Mn-Ti alloys”. Schryvers D, Lahjouji DE, Slootmaekers B, Potapov PL, Scripta metallurgica et materialia 35, 1235 (1996). http://doi.org/10.1016/1359-6462(96)00271-0
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.224
Times cited: 2
DOI: 10.1016/1359-6462(96)00271-0
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“HREM of ceramic high Tc superconductors”. Van Tendeloo G, Krekels T, Journal of the European Ceramic Society 16, 367 (1996). http://doi.org/10.1016/0955-2219(95)00193-X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.947
Times cited: 1
DOI: 10.1016/0955-2219(95)00193-X
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“HREM study of short-range order in Cu-Pd alloys”. Rodewald M, Rodewald K, De Meulenaere P, Van Tendeloo G, (1996)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/AlxGa1-xAs superlattice”. Hilber W, Helm M, Peeters FM, Alavi K, Pathak RN, Physical review : B : condensed matter and materials physics 53, 6919 (1996). http://doi.org/10.1103/PhysRevB.53.6919
Abstract: A combination of infrared spectroscopy and magnetotransport is used to investigate the impurity band and the magnetic-field-induced metal-insulator transition in n-type GaAs/AlxGa1-xAs superlattices. The dropping of the Fermi level from the conduction band into the impurity band upon increasing magnetic field is observed in a sample doped to n=4n(c), where n(c) is the critical density according to the Mott criterion. The metal-insulator transition takes place while the Fermi level is in the impurity band, with no qualitative change from the metallic to the insulating side. Due to the anisotropy of the superlattice band structure, the metal-insulator transition is shifted to higher magnetic field, when the magnetic field is tilted away from the growth axis towards the layer planes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 14
DOI: 10.1103/PhysRevB.53.6919
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“Inclusions in magnetron sputtered YBa2Cu3-x MxO7-d thin films: a study by means of electron microscopy”. Verbist K, Van Tendeloo G, Ye M, Schroeder J, Mehbod M, Deltour R, Microscopy, microanalysis, microstructures 7, 17 (1996). http://doi.org/10.1051/mmm:1996104
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
DOI: 10.1051/mmm:1996104
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“Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs”. de Keyser A, Bogaerts R, Karavolas VC, van Bockstal L, Herlach F, Peeters FM, van de Graaf W, Borghs G, Solid state electronics 40, 395 (1996). http://doi.org/10.1016/0038-1101(96)84617-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 2
DOI: 10.1016/0038-1101(96)84617-X
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“Intersubband-coupling and screening effects on the electron transport in a quasi-two-dimensional δ-doped semiconductor system”. Hai G-Q, Studart N, Peeters FM, Koenraad PM, Wolter JH, Journal of applied physics 80, 5809 (1996). http://doi.org/10.1063/1.363573
Abstract: The effects due to intersubband coupling and screening on the ionized impurity scattering are studied for a quasi-two-dimensional electron system in delta-doped semiconductors. We found that intersubband coupling plays an essential role in describing the screening properties and the effect of ionized impurity scattering on the mobility in a multisubband system. At the onset of the occupation of a higher subband, the screening due to the intersubband coupling leads to a reduction of the small angle scattering rate in the lower subband. We showed that such an effect is significant in a delta-doped quantum well and results in a pronounced increase of the quantum mobility at the onset of the occupation of a higher subband. (C) 1996 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.183
Times cited: 40
DOI: 10.1063/1.363573
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