Abstract: A model for superstructure ordering in the <<chain>> layers of Ga (Co) substituted YBCO intergrowths with general formula (REO2)NSr2MCu2O5 (M = Co, Ga; n = 1, 2, ...) is proposed. By Ga or Co substitution for Cu, the structure of the <<chain>> layer changes : instead of the CuO4 planar squares, the chains consist of MO4 tetrahedra (M = Ga, Co) running along the [110] perovskite direction. The existing model for the Ga substituted <<123>> implies that all the chains are the same. Our new model is based on the results of Electron diffraction and High-resolution electron microscopy investigations. The model reveals the occurrence of two types of chains as a consequence of <<opposite>> ordering between neighbouring tetrahedra. The comer linked tetrahedra in each chain appear as alternatingly rotated in opposite sense, and a chain itself, as being displaced with respect to the underlying structure in one of two senses ; either forth (right) or back (left) along the chain direction. The regular alternation of chains of opposite type doubles the periodicity within a layer and induces the possibility for intrinsic disorder in the chain layer stacking sequence. The planar superstructure and a staggered stacking of the tetrahedral chain layers is found irrespective of the rest of the intergrowth structure. Superstructure ordering in the case of Co substitution is more perfect than for the Ga substitution.

Abstract: The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.

Abstract: Cubic as well as hexagonal single crystals of C70 have been grown and investigated by electron diffraction, electron microscopy and X-ray diffraction. Several phase transitions have been detected and crystallographic models are proposed. Hexagonal crystals, stable at room temperature with c/a = 1.63 will undergo two transitions, upon cooling. First the c/a ratio will increase to 1.82 owing to c-axis allignment of the molecules; at a lower temperature the molecules will orientationally order, resulting in a monoclinic structure.

Abstract: YBCO-based materials containing SO4-tetrahedra centered on the Cu(1)-sites of the CuO-chain plane have been examined by means of electron diffraction and high resolution electron microscopy. An incommensurate modulation is observed and attributed to the ordering of b-oriented SO4-rich chains in the Cu(1)-S-O-layer, described in terms of an SO4-concentration wave.

Abstract: In Bi2Sr2Ca0.6Y0.4Cu2Oy single crystals we have identified the intergrowth of two phases; a normal Bi2Sr2CaCu2Oy type phase with a 4.6b modulation period and a secondary,phase with a 9.4b modulation period. Both the two phases have orthorhombic basic structures with similar lattice parameters but different symmetries, i.e. Bbmb for the normal phase and Ccca for the secondary phase. The c-parameters of these two phases are found to vary independently upon changing the nominal Y content. The modulation characteristics of the secondary phase implies a close structural relation between the two phases. Both phases are discussed from a structural and a compositional point of view.