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Title
Year
Publication
Volume
Times cited
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Vantomme, A.
;
Wu, M.F.
;
Hogg, S.
;
van Landuyt, J.
;
et al.
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
2000
Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS
5
UA library record
;
WoS full record
;