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“3D-printed microneedle-based potentiometric sensor for pH monitoring in skin interstitial fluid”. Parrilla M, Vanhooydonck A, Johns M, Watts R, De Wael K, Sensors and actuators : B : chemical 378, 133159 (2023). http://doi.org/10.1016/J.SNB.2022.133159
Abstract: Wearable electrochemical sensors are driven by the user-friendly capability of continuous monitoring of key biomarkers for diagnostic or therapeutic operations. Particularly, microneedle (MN)-based sensors can access the interstitial fluid (ISF) in the dermis layer of skin to carry out on-body transdermal detection of analytes. Interestingly, 3D-printing technology allows for rapid and versatile prototyping reaching micrometer resolution. Herein, for the first time, we explore 3D-printed hollow MN patches (1 mm height x 1 mm base with 0.3 mm hole) which are modified with conductive inks to develop a potentiometric sensor for pH monitoring. First, the piercing capability of 3D-printed MN patches is demonstrated by using the parafilm model and their insertion in porcine skin. Subsequently, the hollow MNs are filled with conductive inks to engineer a set of microelectrodes. Thereafter, the working and reference electrodes are properly modified with polyaniline and polyvinyl butyral, respectively, toward a highly stable potentiometric cell. A full in vitro characterization is performed within a broad range of pH (i.e. pH 4 to pH 9). Besides, the MN sensor is analytically assessed in phantom gel and pierced on porcine skin to evaluate the resilience of the MN sensor. Finally, the MN sensor is pierced on the forearm of a subject and tested for its on-body monitoring capability. Overall, 3D-printed MN-based potentiometric sensing brings a versatile and affordable technology to minimally-invasively monitor key physiological parameters in the body.
Keywords: A1 Journal article; Engineering sciences. Technology; Internet Data Lab (IDLab); Product development; Antwerp Electrochemical and Analytical Sciences Lab (A-Sense Lab)
DOI: 10.1016/J.SNB.2022.133159
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“Resolution of opiate illicit drugs signals in the presence of some cutting agents with use of a voltammetric sensor array and machine learning strategies”. Ortiz-Aguayo D, Ceto X, De Wael K, del Valle M, Sensors and actuators : B : chemical 357, 131345 (2022). http://doi.org/10.1016/J.SNB.2021.131345
Abstract: In the present work, the resolution and quantification of mixtures of different opiate compounds in the presence of common cutting agents using an electronic tongue (ET) is evaluated. More specifically, ternary mixtures of heroin, morphine and codeine were resolved in the presence of caffeine and paracetamol. To this aim, an array of three carbon screen-printed electrodes were modified with different ink-like solutions of graphite, cobalt (II) phthalocyanine and palladium, and their responses towards the different drugs were characterized by means of square wave voltammetry (SWV). Developed sensors showed a good performance with good linearity at the mu M level, LODs between 1.8 and 5.3 mu M for the 3 actual drugs, and relative standard deviation (RSD) ca. 2% for over 50 consecutive measurements. Next, a quantitative model that allowed the identification and quantification of the individual substances from the overlapped voltammograms was built using partial least squares regression (PLS) as the modeling tool. With this approach, quantification of the different drugs was achieved at the mu M level, with a total normalized root mean square error (NRMSE) of 0.084 for the test subset.
Keywords: A1 Journal article; Antwerp Electrochemical and Analytical Sciences Lab (A-Sense Lab)
DOI: 10.1016/J.SNB.2021.131345
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“Catalytic impact of RuOx clusters to high ammonia sensitivity of tin dioxide”. Marikutsa A, Krivetskiy V, Yashina L, Rumyantseva M, Konstantinova E, Ponzoni A, Comini E, Abakumov A, Gaskov A, Sensors and actuators : B : chemical
T2 –, 25th Eurosensors Conference, SEP 04-07, 2011, Athens, GREECE 175, 186 (2012). http://doi.org/10.1016/j.snb.2012.03.003
Abstract: A comparative study of NH3-sensing performance of blank and modified nanocrystal line SnO2 was performed. Tin dioxide modified by ruthenium displayed the highest ammonia sensitivity with a maximum signal at 200 degrees C. The modifier was shown by XPS and EPR to occur in a mixed valence state of oxidized ruthenium distributed between the surface and bulk of tin dioxide nanocrystals. RuOx clustering on SnO2 surface was detected by means of electron microscopy assisted EDX-mapping. The effect of RuOx on tin dioxide interaction with ammonia was studied by temperature-programmed NH3 desorption, simultaneous Kelvin probe and DC-resistance measurements, EPR spectroscopy and analyses of the gas-solid interaction products. The modifier was shown to promote the materials reactivity to NH3 due to the catalytic activity of RuOx. The interaction with ammonia resulted in dipoles formation on the oxide surface along with reducing the grains net surface charge, established from the electron affinity increase and resistance decrease during NH3 exposure. The RuOx-catalyzed gas-solid interaction was deduced to proceed deeper than in the case of non-modified SnO2 and to yield nitrogen oxides (e.g. NO2), as was suggested by the oxidative character of gaseous products of NH3 interaction with RuOx-modified tin dioxide at 200 degrees C. (C) 2012 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.401
Times cited: 20
DOI: 10.1016/j.snb.2012.03.003
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“LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas”. Volkov VV, van Landuyt J, Marushkin K, Gijbels R, Férauge C, Vasilyev MG, Shelyakin AA, Sokolovsky AA, Sensors and actuators : A : physical 62, 624 (1997). http://doi.org/10.1016/S0924-4247(97)01377-0
Abstract: Highly effective IR light-emitting diodes operating at the wavelength 1.66 mu m and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/ In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM),electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CK, gas sensor has been developed and fabricated an the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested, It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2 x 1 km. (C) 1997 Elsevier Science S.A.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.499
Times cited: 3
DOI: 10.1016/S0924-4247(97)01377-0
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“Electrochemical methods for on-site multidrug detection at festivals”. Van Echelpoel R, Schram J, Parrilla M, Daems D, Slosse A, Van Durme F, De Wael K, Sensors &, Diagnostics 1, 793 (2022). http://doi.org/10.1039/D2SD00043A
Abstract: Two electrochemical methodologies, i.e. flowchart and dual-sensor, were developed to aid law enforcement present at festivals to obtain a rapid indication of the presence of four illicit drugs in suspicious samples encountered.
Keywords: A1 Journal article; Engineering sciences. Technology; Antwerp Electrochemical and Analytical Sciences Lab (A-Sense Lab)
DOI: 10.1039/D2SD00043A
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“An improved electrochemical aptasensor for chloramphenicol detection based on aptamer incorporated gelatine”. Hamidi-Asl E, Dardenne F, Blust R, De Wael K, Sensors 15, 7605 (2015). http://doi.org/10.3390/S150407605
Abstract: Because of the biocompatible properties of gelatine and the good affinity of aptamers for their targets, the combination of aptamer and gelatine type B is reported as promising for the development of biosensing devices. Here, an aptamer for chloramphenicol (CAP) is mixed with different types of gelatine and dropped on the surface of disposable gold screen printed electrodes. The signal of the CAP reduction is investigated using differential pulse voltammetry. The diagnostic performance of the sensor is described and a detection limit of 1.83 x 10(-10) M is found. The selectivity and the stability of the aptasensor are studied and compared to those of other CAP sensors described in literature.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 2.677
Times cited: 21
DOI: 10.3390/S150407605
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“An electrochemical impedimetric aptasensing platform for sensitive and selective detection of small molecules such as chloramphenicol”. Pilehvar S, Dierckx T, Blust R, Breugelmans T, De Wael K, Sensors 14, 12059 (2014). http://doi.org/10.3390/S140712059
Abstract: We report on the aptadetection of chloramphenicol (CAP) using electrochemical impedance spectroscopy. The detection principle is based on the changes of the interfacial properties of the electrode after the interaction of the ssDNA aptamers with the target molecules. The electrode surface is partially blocked due to the formation of the aptamer-CAP complex, resulting in an increase of the interfacial electron-transfer resistance of the redox probe detected by electrochemical impedance spectroscopy or cyclic voltammetry. We observed that the ratio of polarization resistance had a linear relationship with the concentrations of CAP in the range of 1.76127 nM, and a detection limit of 1.76 nM was obtained. The covalent binding of CAP-aptamer on the electrode surface combined with the unique properties of aptamers and impedimetric transduction leads to the development of a stable and sensitive electrochemical aptasensor for CAP.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Applied Electrochemistry & Catalysis (ELCAT)
Impact Factor: 2.677
Times cited: 34
DOI: 10.3390/S140712059
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“Redesigning an electrochemical MIP sensor for PFOS : practicalities and pitfalls”. Moro G, Cristofori D, Bottari F, Cattaruzza E, De Wael K, Moretto LM, Sensors 19, 4433 (2019). http://doi.org/10.3390/S19204433
Abstract: There is a growing interest in the technological transfer of highly performing electrochemical sensors within portable analytical devices for the in situ monitoring of environmental contaminants, such as perfluorooctanesulfonic acid (PFOS). In the redesign of biomimetic sensors, many parameters should be taken into account from the working conditions to the electrode surface roughness. A complete characterization of the surface modifiers can help to avoid time-consuming optimizations and better interpret the sensor responses. In the present study, a molecularly imprinted polymer electrochemical sensor (MIP) for PFOS optimized on gold disk electrodes was redesigned on commercial gold screen-printed electrodes. However, its performance investigated by differential pulse voltammetry was found to be poor. Before proceeding with further optimization, a morphological study of the bare and modified electrode surfaces was carried out by scanning electron microscopy-energy-dispersive X-ray spectrometry (SEM-EDS), atomic force microscopy (AFM) and profilometry revealing an heterogeneous distribution of the polymer strongly influenced by the electrode roughness. The high content of fluorine of the target-template molecule allowed to map the distribution of the molecularly imprinted polymer before the template removal and to define a characterization protocol. This case study shows the importance of a multi-analytical characterization approach and identify significant parameters to be considered in similar redesigning studies.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 2.677
DOI: 10.3390/S19204433
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“Real-time wood behaviour : the use of strain gauges for preventive conservation applications”. Anaf W, Cabal A, Robbe M, Schalm O, Sensors 20, 305 (2020). http://doi.org/10.3390/S20010305
Abstract: Within the heritage field, the application of strain gauges on wood surfaces is a little-explored but inexpensive and effective method to analyse the environmental appropriateness of rooms for the wooden heritage collections they contain. This contribution proposes a wood sensor connected to a data logger to identify short moments with an elevated risk of harm. Two experiments were performed to obtain insights pertaining to the applicability of wood sensors to evaluate preservation conditions. (1) The representativeness of strain gauges on dummies was tested for their use in evaluating the preservation conditions of a range of wooden objects exposed to the same environment. For this, three situations were mimicked: a bare wood surface, a wood surface covered with a preparation layer, and a wood surface covered with a preparation and varnish layer. (2) The usability of strain gauges to monitor the wood behaviour in real-time measurements was tested with a monitoring campaign of almost two years in a church where a new heating system was installed. The results of both experiments are promising, and the authors encourage a broader application of strain gauges in the heritage field.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Antwerp Cultural Heritage Sciences (ARCHES)
DOI: 10.3390/S20010305
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“Electrochemical rapid detection of methamphetamine from confiscated samples using a graphene-based printed platform”. Truta F, Drăgan A-M, Tertis M, Parrilla M, Slosse A, Van Durme F, De Wael K, Cristea C, Sensors 23, 6193 (2023). http://doi.org/10.3390/S23136193
Abstract: Methamphetamine (MAP) is a highly addictive and illegal stimulant drug that has a significant impact on the central nervous system. Its detection in biological and street samples is crucial for various organizations involved in forensic medicine, anti-drug efforts, and clinical diagnosis. In recent years, nanotechnology and nanomaterials have played a significant role in the development of analytical sensors for MAP detection. In this study, a fast, simple, and cost-effective electrochemical sensor is presented that is used for the sensitive detection of MAP in confiscated street samples with a complex matrix. The optimized screen-printed sensor based on a carbon working electrode modified with graphene demonstrated an excellent limit of detection, good sensitivity, and a wide dynamic range (1–500 μM) for the target illicit drug both for standard solutions and real samples (seized samples, tap water, and wastewater samples). It can detect MAP at concentrations as low as 300 nM in real samples. This limit of detection is suitable for the rapid preliminary screening of suspicious samples in customs, ports, airports, and on the street. Furthermore, the sensor exhibits a good recovery rate, indicating its reliability and repeatability. This quality is crucial for ensuring consistent and accurate results during screening processes.
Keywords: A1 Journal article; Antwerp Electrochemical and Analytical Sciences Lab (A-Sense Lab)
DOI: 10.3390/S23136193
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“Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations”. Pourtois G, Dabral A, Sankaran K, Magnus W, Yu H, de de Meux AJ, Lu AKA, Clima S, Stokbro K, Schaekers M, Houssa M, Collaert N, Horiguchi N, Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar , 303 (2017). http://doi.org/10.1149/08001.0303ECST
Abstract: In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first-principles calculations with Non-Equilibrium Green functions transport simulations. The intrinsic contact resistivity is found to saturate at similar to 2x10(-10) Omega.cm(2) with the doping concentration and sets an intrinsic limit to the ultimate contact resistance achievable for n-doped Si vertical bar amorphous-TiSi. This limit arises from the intrinsic properties of the semiconductor and of the metal such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting metals with a heavy electron effective mass helps reducing the interface intrinsic contact resistivity.
Keywords: P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 1
DOI: 10.1149/08001.0303ECST
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“Hot magneto-phonon and electro-phonon resonances in heterostructures”. Peeters FM, Devreese JT, Semiconductor science and technology: B 7, 15 (1992). http://doi.org/10.1088/0268-1242/7/3B/004
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 2.19
Times cited: 12
DOI: 10.1088/0268-1242/7/3B/004
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“Novel nonlinear transport phenomena in a triangular quantum well”. Kastalsky A, Peeters FM, Chan WK, Florez LT, Harbison JP, Semiconductor science and technology: B 7, 530 (1992). http://doi.org/10.1088/0268-1242/7/3B/138
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.19
Times cited: 4
DOI: 10.1088/0268-1242/7/3B/138
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“Bloch and localized electrons in semiconductor superlattices”. Helm M, Hilber W, Fromherz T, Peeters FM, Alavi K, Pathak RN, Semiconductor science and technology 9, 1989 (1994). http://doi.org/10.1088/0268-1242/9/11S/022
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.19
Times cited: 1
DOI: 10.1088/0268-1242/9/11S/022
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“Klein tunneling in single and multiple barriers in graphene”. Pereira JM, Peeters FM, Chaves A, Farias GA, Semiconductor science and technology 25, 033002 (2010). http://doi.org/10.1088/0268-1242/25/3/033002
Abstract: We review the transmission properties of carriers interacting with potential barriers in graphene. The tunneling of electrons and holes in quantum structures in graphene is found to display features that are in marked contrast with those of other systems. In particular, the interaction between the carriers with electrostatic potential barriers can be related to the propagation of electromagnetic waves in media with negative refraction indices, also known as metamaterials. This behavior becomes evident as one calculates the time evolution of wavepackets propagating across the barrier interface. In addition, we discuss the effect of trigonal warping on the tunneling through potential barriers.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.305
Times cited: 83
DOI: 10.1088/0268-1242/25/3/033002
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“Warm-electron transport in a two-dimensional semiconductor”. Xu W, Peeters FM, Devreese JT, Semiconductor science and technology 7, 1251 (1992)
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 2.19
Times cited: 3
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“Driven spin transitions in fluorinated single- and bilayer-graphene quantum dots”. Zebrowski DP, Peeters FM, Szafran B, Semiconductor science and technology 32, 065016 (2017). http://doi.org/10.1088/1361-6641/AA6DF4
Abstract: Spin transitions driven by a periodically varying electric potential in dilute fluorinated graphene quantum dots are investigated. Flakes of monolayer graphene as well as electrostatic electron traps induced in bilayer graphene are considered. The stationary states obtained within the tight-binding approach are used as the basis for description of the system dynamics. The dilute fluorination of the top layer lifts the valley degeneracy of the confined states and attenuates the orbital magnetic dipole moments due to current circulation within the flake. The spin-orbit coupling introduced by the surface deformation of the top layer induced by the adatoms allows the spin flips to be driven by the AC electric field. For the bilayer quantum dots the spin flip times is substantially shorter than the spin relaxation. Dynamical effects including many-photon and multilevel transitions are also discussed.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.305
DOI: 10.1088/1361-6641/AA6DF4
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“The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography”. Denneulin T, Rouvière JL, Béché, A, Py M, Barnes JP, Rochat N, Hartmann JM, Cooper D, Semiconductor science and technology 26, 1 (2011). http://doi.org/10.1088/0268-1242/26/12/125010
Abstract: Si/Si(1 − x − y)GexCy superlattices are used in the construction of new microelectronic architectures such as multichannel transistors. The introduction of carbon in SiGe allows for compensation of the strain and to avoid plastic relaxation. However, the formation of incoherent β-SiC clusters during annealing limits the processability of SiGeC. This precipitation leads to a modification of the strain in the alloy due to the reduction of the substitutional carbon content. Here, we investigated the strain in annealed Si/Si0.744Ge0.244C0.012 superlattices grown by reduced pressure chemical vapour deposition using dark-field electron holography. The variation of the substitutional C content was calculated by correlating the results with finite-element simulations. The obtained values were then compared with Fourier-transformed infrared spectrometry measurements. It was shown that after annealing for 2 min at 1050 °C carbon no longer has any influence on strain in the superlattice, which behaves like pure SiGe. However, a significant proportion of substitutional C atoms remain in a third-nearest neighbour (3nn) configuration. It was deduced that the influence of 3nn C on strain is negligible and that only isolated atoms have a significant contribution. It was also proposed that the 3nn configuration is an intermediary step during the formation of SiC clusters.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.305
DOI: 10.1088/0268-1242/26/12/125010
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“Strain measurement in semiconductor FinFET devices using a novel moiré, demodulation technique”. Prabhakara V, Jannis D, Béché, A, Bender H, Verbeeck J, Semiconductor science and technology (2019). http://doi.org/10.1088/1361-6641/ab5da2
Abstract: Moiré fringes are used throughout a wide variety of applications in physics and
engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in Scanning Transmission Electron Microscopy imaging to provide local strain measurement in crystals by comparing the crystal lattice with the scanning raster that then serves as the reference. The images obtained in this way contain a beating fringe pattern with a local period that represents the deviation of the lattice from the reference. In order to obtain the actual strain value, a region containing a full period of the fringe is required, which results in a compromise between strain sensitivity and spatial resolution. In this paper we propose an advanced setup making use of an optimised scanning pattern and a novel phase stepping demodulation scheme. We demonstrate the novel method on a series of 16 nm Si-Ge semiconductor FinFET devices in which strain plays a crucial role in modulating the charge carrier mobility. The obtained results are compared with both Nano-beam diffraction and the recently proposed Bessel beam diffraction technique. The setup provides a much improved spatial resolution over conventional moiré imaging in STEM while at the same time being fast and requiring no specialised diffraction camera as opposed to the diffraction techniques we compare to.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.305
Times cited: 8
DOI: 10.1088/1361-6641/ab5da2
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“Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures”. Loo R, Arimura H, Cott D, Witters L, Pourtois G, Schulze A, Douhard B, Vanherle W, Eneman G, Richard O, Favia P, Mitard J, Mocuta D, Langer R, Collaert N, Semiconductor Process Integration 10 , 241 (2017). http://doi.org/10.1149/08004.0241ECST
Abstract: Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees C. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during the Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1149/08004.0241ECST
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“HREM investigation of martensite precursor effects and stacking sequences in Ni-Mn-Ti alloys”. Schryvers D, Lahjouji DE, Slootmaekers B, Potapov PL, Scripta metallurgica et materialia 35, 1235 (1996). http://doi.org/10.1016/1359-6462(96)00271-0
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.224
Times cited: 2
DOI: 10.1016/1359-6462(96)00271-0
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“Analytical TEM investigations on concentration gradients surrounding Ni4Ti3 precipitates in Ni-Ti shape memory material”. Yang Z, Tirry W, Schryvers D, Scripta materialia 52, 1129 (2005). http://doi.org/10.1016/j.scriptamat.2005.02.013
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.747
Times cited: 49
DOI: 10.1016/j.scriptamat.2005.02.013
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“Atomistic structure of Cu-containing \beta", precipitates in an Al-Mg-Si-Cu alloy”. Li K, Béché, A, Song M, Sha G, Lu X, Zhang K, Du Y, Ringer SP, Schryvers D, Scripta materialia 75, 86 (2014). http://doi.org/10.1016/j.scriptamat.2013.11.030
Abstract: The beta '' precipitates in a peak-aged Al-Mg-Si-Cu alloy were measured with an average composition of 28.6Al-38.7Mg-26.5Si-5.17Cu (at.%) using atom probe tomography. High-angle annular dark-field observations revealed that Cu incompletely substitutes for the Mg-1 and Si-3 columns, preferentially for one column in each pair of Si-3. Cu-free Si columns form a parallelogram-shaped network that constitutes the basis of subsequent precipitates in the system, with a = 0.37 nm, b = 0.38 nm, gamma = 113 degrees and c = 0.405 nm. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.747
Times cited: 22
DOI: 10.1016/j.scriptamat.2013.11.030
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“Effect of amorphous-crystalline interfaces on the martensitic transformation in Ti50Ni25Cu25”. Santamarta R, Schryvers D, Scripta materialia 50, 1423 (2004). http://doi.org/10.1016/j.scriptamat.2004.03.013
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.747
Times cited: 29
DOI: 10.1016/j.scriptamat.2004.03.013
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“Electron microscopy study of Nb-rich nanoprecipitates in NiTiNb and their influence on the martensitic transformation”. Shi H, Pourbabak S, Van Humbeeck J, Schryvers D, Scripta materialia 67, 939 (2012). http://doi.org/10.1016/j.scriptamat.2012.08.020
Abstract: Nb-rich nanoprecipitates in the matrix of an annealed commercial NiTiNb alloy are investigated by scanning and transmission electron microscopy, including slice-and-view and chemical analysis. The precipitates have a diameter of around 100 nm, are faceted and have a cube-on-cube relation with the B2 matrix. In situ TEM cooling shows that the martensitic transformation is hampered by the presence of these precipitates. The latter could explain the increase in hysteresis when compared with the binary system.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.747
Times cited: 29
DOI: 10.1016/j.scriptamat.2012.08.020
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“Focused ion beam/scanning electron microscopy tomography and conventional transmission electron microscopy assessment of Ni4Ti3 morphology in compression-aged Ni-rich Ni-Ti single crystals”. Cao S, Somsen C, Croitoru M, Schryvers D, Eggeler G, Scripta materialia 62, 399 (2010). http://doi.org/10.1016/j.scriptamat.2009.11.040
Abstract: The size, morphology and configuration of Ni4Ti3 precipitates in a single-crystal NiTi alloy have been investigated by two-dimensional transmission electron microscopy-based image analysis and three-dimensional reconstruction from slice-and-view images obtained in a focused ion beam/scanning electron microscopy (FIB/SEM) dual-beam system. Average distances between the precipitates measured along the compression direction correlate well between both techniques, while particle shape and configuration data is best obtained from FIB/SEM. Precipitates form pockets of B2 of 0.54 ìm in the compression direction and 1 ìm perpendicular to the compression direction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.747
Times cited: 16
DOI: 10.1016/j.scriptamat.2009.11.040
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“Is there a relationship between the stacking fault character and the activated mode of plasticity of FeMn-based austenitic steels?”.Idrissi H, Ryelandt L, Veron M, Schryvers D, Jacques PJ, Scripta materialia 60, 941 (2009). http://doi.org/10.1016/j.scriptamat.2009.01.040
Abstract: By changing the testing temperature, an austenitic FeMnAlSi alloy presents either å-martensite transformation or mechanical twinning during straining. In order to understand the nucleation and growth mechanisms involved in both phenomena, defects and particularly stacking faults, were characterized by transmission electron microscopy. It is observed that the character of the stacking faults also changes (from extrinsic to intrinsic) together with the temperature and the activated mode of plasticity.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.747
Times cited: 84
DOI: 10.1016/j.scriptamat.2009.01.040
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“Microstructure and precipitates in as-cast Co38Ni33Al29 shape memory alloy”. Bartova B, Schryvers D, Yang Z, Ignacova S, Sittner P, Scripta materialia 57, 37 (2007). http://doi.org/10.1016/j.scriptamat.2007.03.007
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.747
Times cited: 22
DOI: 10.1016/j.scriptamat.2007.03.007
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“On the crystal structure of TiNi-Cu martensite”. Potapov P, Shelyakov A, Schryvers D, Scripta materialia 44, 1 (2001). http://doi.org/10.1016/S1359-6462(00)00555-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.747
Times cited: 36
DOI: 10.1016/S1359-6462(00)00555-8
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“On the relationship between the twin internal structure and the work-hardening rate of TWIP steels”. Idrissi H, Renard K, Schryvers D, Jacques PJ, Scripta materialia 63, 961 (2010). http://doi.org/10.1016/j.scriptamat.2010.07.016
Abstract: FeMnC and FeMnSiAl TWIP steels deformed under the same conditions exhibit different work-hardening rates. The present study investigates the microstructure of plastically deformed FeMnC and FeMnSiAl samples, particularly the internal structure of the mechanically generated twins and their topology at the grain scale. Twins in the FeMnC steel are finer and full of sessile dislocations, rendering this material distinctly stronger with an improved work-hardening rate.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.747
Times cited: 145
DOI: 10.1016/j.scriptamat.2010.07.016
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