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“2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors”. Sels D, Sorée B, Groeseneken G, 14th International Workshop on Computational Electronics, 85 (2010)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
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“How would a superconducting liquid flow in a magnetic field?”.Maeyens A, Tempère J, Europhysics news 38, 18 (2007)
Keywords: A3 Journal article; Theory of quantum systems and complex systems; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems”. Goux L, Fantini A, Govoreanu B, Kar G, Clima S, Chen Y-Y, Degraeve R, Wouters DJ, Pourtois G, Jurczak M, ECS solid state letters 1, 63 (2012). http://doi.org/10.1149/2.003204ssl
Abstract: In this letter, we address the bipolar resistive switching phenomenology in scaled TiN\HfO2\Hf cells. By means of stack engineering using a thin Al2O3 layer inserted either at the TiN\HfO2 or at the Hf\HfO2 interface, we demonstrate that the reset operation takes place close to the TiNanode. Due to the increase of the oxygen-vacancy profile from the TiN to the Hf interface, the filament-confining and wide band-gap Al2O3 layer should indeed be engineered at the interface with the TiN electrode in order to further improve the switching control and to allow reaching larger state resistances. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.003204ssl] All rights reserved.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.184
Times cited: 11
DOI: 10.1149/2.003204ssl
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“Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates”. Delabie A, Jayachandran S, Caymax M, Loo R, Maggen J, Pourtois G, Douhard B, Conard T, Meersschaut J, Lenka H, Vandervorst W, Heyns M;, ECS solid state letters 2, P104 (2013). http://doi.org/10.1149/2.009311ssl
Abstract: Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O-3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O-3 reaction at 50 degrees C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm(2) is achieved from SiH4 at 500 degrees C. (C) 2013 The Electrochemical Society. All rights reserved.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.184
Times cited: 12
DOI: 10.1149/2.009311ssl
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“Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations”. Sankaran K, Clima S, Mees M, Pourtois G, ECS journal of solid state science and technology 4, N3127 (2015). http://doi.org/10.1149/2.0181501jss
Abstract: The bulk properties of elementary metals and copper based binary alloys have been investigated using automated first-principles simulations to evaluate their potential to replace copper and tungsten as interconnecting wires in the coming CMOS technology nodes. The intrinsic properties of the screened candidates based on their cohesive energy and on their electronic properties have been used as a metrics to reflect their resistivity and their sensitivity to electromigration. Using these values, the 'performances' of the alloys have been benchmarked with respect to the Cu and W ones. It turns out that for some systems, alloying Cu with another element leads to a reduced tendency to electromigration. This is however done at the expense of a decrease of the conductivity of the alloy with respect to the bulk metal. (C) 2014 The Electrochemical Society. All rights reserved.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.787
Times cited: 19
DOI: 10.1149/2.0181501jss
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“Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures”. Loo R, Arimura H, Cott D, Witters L, Pourtois G, Schulze A, Douhard B, Vanherle W, Eneman G, Richard O, Favia P, Mitard J, Mocuta D, Langer R, Collaert N, ECS journal of solid state science and technology 7, P66 (2018). http://doi.org/10.1149/2.0191802JSS
Abstract: Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET and Gate All Around devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions. (C) The Author(s) 2018. Published by ECS.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.787
Times cited: 5
DOI: 10.1149/2.0191802JSS
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“Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations”. Dabral A, Pourtois G, Sankaran K, Magnus W, Yu H, de de Meux AJ, Lu AKA, Clima S, Stokbro K, Schaekers M, Collaert N, Horiguchi N, Houssa M, ECS journal of solid state science and technology 7, N73 (2018). http://doi.org/10.1149/2.0041806JSS
Abstract: In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped n-type 2D and 3D semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first principles calculations with Non-Equilibrium Green functions transport simulations. The evolution of the intrinsic contact resistivity with the doping concentration is found to saturate at similar to 2 x 10(-10) Omega.cm(2) for the case of TiSi and imposes an intrinsic limit to the ultimate contact resistance achievable for n-doped Silamorphous-TiSi (aTiSi). The limit arises from the intrinsic properties of the semiconductors and of the metals such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting heavy electron effective mass metals with semiconductor helps reducing the interface intrinsic contact resistivity. This observation seems to hold true regardless of the 3D character of the semiconductor, as illustrated for the case of three 2D semiconducting materials, namely MoS2, ZrS2 and HfS2. (C) The Author(s) 2018. Published by ECS.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.787
Times cited: 2
DOI: 10.1149/2.0041806JSS
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“On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications”. Dhayalan SK, Kujala J, Slotte J, Pourtois G, Simoen E, Rosseel E, Hikavyy A, Shimura Y, Loo R, Vandervorst W, ECS journal of solid state science and technology 7, P228 (2018). http://doi.org/10.1149/2.0071805JSS
Abstract: Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (<1%). Literature proposes the formation of local semiconducting Si3P4 complexes to explain the observed behaviors in Si:P [Z. Ye et al., ECS Trans., 50(9) 2013, p. 1007-10111. The development of tensile strain and the saturation in active carrier is attributed to the presence of local complexes while their dispersal on annealing is attributed to strain reduction and increase in active carrier density. However, the existence of such local complexes is not proven and a fundamental void exists in understanding the structure-property correlation in Si:P films. In this respect, our work investigates the reason behind the evolution of strain and electrical properties in the as-grown and annealed Si:P epitaxial layers using ab-initio techniques and corroborate the results with physical characterization techniques. It will be shown that the strain developed in Si:P films is not due to any specific complexes while the formation of Phosphorus-vacancy complexes will be shown responsible for the carrier saturation and the increase in resistivity in the as-grown films. Interstitial/precipitate formation is suggested to be a reason for the strain loss in the annealed films. (C) The Author(s) 2018. Published by ECS.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.787
Times cited: 4
DOI: 10.1149/2.0071805JSS
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“Modeling the growth of SWNTs and graphene on the atomic scale”. Neyts EC, Bogaerts A, ECS transactions 45, 73 (2012). http://doi.org/10.1149/1.3700454
Abstract: The possibility of application of nanomaterials is determined by our ability to control the properties of the materials, which are ultimately determined by their structure and hence their growth processes. We employ hybrid molecular dynamics / Monte Carlo (MD/MC) simulations to explore the growth of SWNTs and graphene on nickel as a catalyst, with the specific goal of unraveling the growth mechanisms. While the general observations are in agreement with the literature, we find a number of interesting phenomena to be operative which are crucial for the growth, and which are not accessible by MD simulations alone due to the associated time scale. Specifically, we observe metal mediated healing and restructuring processes to take place, reorganizing the carbon network during the initial nucleation step. In the case of carbon nanotube growth, this leads to the growth of tubes with a determinable chirality. In the case of graphene formation, we find that graphene is only formed at temperatures above 700 K. These results are of importance for understanding the growth mechanisms of these carbon nanomaterials on the fundamental level.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 2
DOI: 10.1149/1.3700454
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“Theoretical study of silicene and germanene”. Houssa M, van den Broek B, Scalise E, Pourtois G, Afanas'ev VV, Stesmans A, Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 (2013). http://doi.org/10.1149/05301.0051ECST
Abstract: The structural and electronic properties of silicene and germanene on metallic and non-metallic substrates are investigated theoretically, using first-principles simulations. We first study the interaction of silicene with Ag(111) surfaces, focusing on the (4x4) silicene/Ag structure. Due to symmetry breaking in the silicene layer (nonequivalent number of top and bottom Si atoms), silicene is predicted to be semiconducting, with a computed energy gap of about 0.3 eV. However, the charge transfer occurring at the silicene/Ag(111) interface leads to an overall metallic system. We next investigate the interaction of silicene and germanene with hexagonal non-metallic substrates, namely ZnS and ZnSe. On reconstructed (semiconducting) (0001) ZnS or ZnSe surfaces, silicene and germanene are found to be semiconducting. Remarkably, the nature (indirect or direct) and magnitude of their energy band gap can be controlled by an out-of-plane electric field.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 6
DOI: 10.1149/05301.0051ECST
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“Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures”. Loo R, Arimura H, Cott D, Witters L, Pourtois G, Schulze A, Douhard B, Vanherle W, Eneman G, Richard O, Favia P, Mitard J, Mocuta D, Langer R, Collaert N, Semiconductor Process Integration 10 , 241 (2017). http://doi.org/10.1149/08004.0241ECST
Abstract: Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees C. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during the Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1149/08004.0241ECST
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“Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations”. Pourtois G, Dabral A, Sankaran K, Magnus W, Yu H, de de Meux AJ, Lu AKA, Clima S, Stokbro K, Schaekers M, Houssa M, Collaert N, Horiguchi N, Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar , 303 (2017). http://doi.org/10.1149/08001.0303ECST
Abstract: In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first-principles calculations with Non-Equilibrium Green functions transport simulations. The intrinsic contact resistivity is found to saturate at similar to 2x10(-10) Omega.cm(2) with the doping concentration and sets an intrinsic limit to the ultimate contact resistance achievable for n-doped Si vertical bar amorphous-TiSi. This limit arises from the intrinsic properties of the semiconductor and of the metal such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting metals with a heavy electron effective mass helps reducing the interface intrinsic contact resistivity.
Keywords: P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 1
DOI: 10.1149/08001.0303ECST
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“Nanodiamond-based nanolubricants : investigation of friction surfaces”. Shenderova O, Vargas A, Turner S, Ivanov DM, Ivanov MG, Tribology transactions 57, 1051 (2014). http://doi.org/10.1080/10402004.2014.933933
Abstract: Synergistic compositions of detonation nanodiamond (DND) particles with polytetrafluoroethylene and molybdenum dialkyldithiophosphate were used in ring-on-ring, four-ball, and block-on-ring tests as an additive to polyalphaolefins and engine oils. Modest to significant reductions in the friction coefficients, wear, or both were observed. In the wear scars produced in the block-on-ring tests, the friction surfaces were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and profilometry. Significant polishing effects of the friction surfaces in lubricants containing DND were revealed in SEM observations and roughness measurements. The roughness of the scar surfaces produced in the presence of DND additives was about 35% lower than the roughness of the scars observed in pure oil experiments.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.685
Times cited: 23
DOI: 10.1080/10402004.2014.933933
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“L'analyse des eaux géothermales par spectrométrie de masse à, étincelles”. Vandelannoote R, Blommaert W, van Grieken R, Gijbels R, Spectra 2000: la revue de l'instrumentation 53, 66 (1979)
Keywords: A3 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Anharmonic effects on thermodynamic properties of a graphene monolayer”. da Silva ALC, Candido L, Teixeira Rabelo JN, Hai G-Q, Peeters FM, Europhysics letters 107, 56004 (2014). http://doi.org/10.1209/0295-5075/107/56004
Abstract: We extend the unsymmetrized self-consistent-field method (USF) for anharmonic crystals to layered non-Bravais crystals to investigate structural, dynamical and thermodynamic properties of a free-standing graphene monolayer. In this theory, the main anharmonicity of the crystal lattice has been included and the quantum corrections are taken into account in an h-expansion for the one-particle density matrix. The obtained result for the thermal expansion coefficient (TEC) of graphene shows a strong temperature dependence and agrees with experimental results by Bao et al. (Nat. Nanotechnol., 4 (2009) 562). The obtained value of TEC at room temperature (300 K) is -6.4 x 10(- 6) K- 1 and it becomes positive for T > T-alpha = 358K. We find that quantum effects are significant for T < 1000 K. The interatomic distance, effective amplitudes of the graphene lattice vibrations, adiabatic and isothermal bulk moduli, isobaric and isochoric heat capacities are also calculated and their temperature dependences are determined. Copyright (C) EPLA, 2014
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 23
DOI: 10.1209/0295-5075/107/56004
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“The break-up of the vortex structure in a mesoscopic wire containing a constriction”. Elmurodov AK, Vodolazov DY, Peeters FM, Europhysics letters 74, 151 (2006). http://doi.org/10.1209/epl/i2005-10496-0
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 11
DOI: 10.1209/epl/i2005-10496-0
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“Confined magnetic guiding orbit states”. Reijniers J, Matulis A, Chang K, Peeters FM, Vasilopoulos P, Europhysics letters 59, 749 (2002). http://doi.org/10.1209/epl/i2002-00189-8
Abstract: We show how snake-orbit states which run along a magnetic edge can be confined electrically. We consider a two-dimensional electron gas (2DEG) confined into a quantum wire, subjected to a strong perpendicular and steplike magnetic field B/ − B. Close to this magnetic step, new, spatially confined bound states arise as a result of the lateral confinement and the magnetic-field step. The number of states, with energy below the first Landau level, increases as B becomes stronger or as the wire width becomes larger. These bound states can be understood as an interference between two counter-propagating one-dimensional snake-orbit states.
Keywords: A1 Journal article; Engineering Management (ENM); Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 26
DOI: 10.1209/epl/i2002-00189-8
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“Continuum vs. discrete flux behaviour in large mesoscopic Bi2Sr2CaCu2O8+\delta disks”. Connolly MR, Milošević, MV, Bending SJ, Clem JR, Tamegai T, Europhysics letters 85, 17008 (2009). http://doi.org/10.1209/0295-5075/85/17008
Abstract: Scanning Hall probe and local Hall magnetometry measurements have been used to investigate flux distributions in large mesoscopic superconducting disks with sizes that lie near the crossover between the bulk and mesoscopic vortex regimes. Results obtained by directly mapping the magnetic induction profiles of the disks at different applied fields can be quite successfully fitted to analytic models which assume a continuous distribution of flux in the sample. At low fields, however, we do observe clear signatures of the underlying discrete vortex structure and can resolve the characteristic mesoscopic compression of vortex clusters in increasing magnetic fields. Even at higher fields, where single-vortex resolution is lost, we are still able to track configurational changes in the vortex patterns, since competing vortex orders impose unmistakable signatures on “local” magnetisation curves as a function of the applied field. Our observations are in excellent agreement with molecular-dynamics numerical simulations which lead us to a natural definition of the lengthscale for the crossover between discrete and continuum behaviours in our system.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 17
DOI: 10.1209/0295-5075/85/17008
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“Direct observation of nanometer-scale pinning sites in (Nd0.33Eu0.20Gd0.47)Ba2Cu3O7-\delta single crystals”. Das P, Koblischka MR, Turner S, Van Tendeloo G, Wolf T, Jirsa M, Hartmann U, Europhysics letters 83, 37005 (2008). http://doi.org/10.1209/0295-5075/83/37005
Abstract: We report on the observation of self-organized stripe-like structures on the as-grown surface and in the bulk of (Nd,Eu,Gd)Ba2Cu3Oy single crystals. The periodicity of the stripes on the surface lies between 500800 nm. These are possibly the growth steps of the crystal. Transmission electron microscopy investigations revealed stripes of periodicity in the range of 2040 nm in the bulk. From electron back scattered diffraction investigations, no crystallographic misorientation due to the nanostripes has been found. Scanning tunneling spectroscopic experiments revealed nonsuperconducting regions, running along twin directions, which presumably constitute strong pinning sites.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.957
Times cited: 5
DOI: 10.1209/0295-5075/83/37005
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“Direct structural and spectroscopic investigation of ultrathin films of tetragonal CuO: Six-fold coordinated copper”. Samal D, Tan H, Takamura Y, Siemons W, Verbeeck J, Van Tendeloo G, Arenholz E, Jenkins CA, Rijnders G, Koster G, Europhysics letters 105, 17003 (2014). http://doi.org/10.1209/0295-5075/105/17003
Abstract: Unlike other 3d transition metal monoxides (MnO, FeO, CoO, and NiO), CuO is found in a low-symmetry distorted monoclinic structure rather than the rocksalt structure. We report here of the growth of ultrathin CuO films on SrTiO3 substrates; scanning transmission electron microscopy was used to show the stabilization of a tetragonal rocksalt structure with an elongated c-axis such that c/a similar to 1.34 and the Cu-O-Cu bond angle similar to 180 degrees, pointing to metastable six-fold coordinated Cu. X-ray absorption spectroscopy demonstrates that the hole at the Cu site for the CuO is localized in 3d(x2-y2) orbital unlike the well-studied monoclinic CuO phase. The experimental confirmation of the tetragonal structure of CuO opens up new avenues to explore electronic and magnetic properties of six-fold coordinated Cu. Copyright (C) EPLA, 2014
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.957
Times cited: 15
DOI: 10.1209/0295-5075/105/17003
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“Dynamics of topological defects and the effects of the cooling rate on finite-size two-dimensional screened Coulomb clusters”. Nelissen K, Partoens B, Peeters FM, Europhysics letters 79, 66001 (2007). http://doi.org/10.1209/0295-5075/79/66001
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 9
DOI: 10.1209/0295-5075/79/66001
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“Electron diffraction refinement of the TiNi(Fe) R-phase structure”. Schryvers D, Potapov P, Journal de physique 112, 751 (2003). http://doi.org/10.1051/jp4:2003991
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
DOI: 10.1051/jp4:2003991
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“Electron-microscopy investigation of superconducting la2cu(o, f)4+y oxyfluoride”. Weill, Chevalier, Chambon, Tressaud, Darriet, Etourneau, Van Tendeloo G, European journal of solid state and inorganic chemistry 30, 1095 (1993)
Abstract: The fluorination of La2CuO4 can lead to different oxyfluoride compounds depending on the TF2 temperature of the fluorine gas treatment. When 150-degrees-C T(F2) less-than-or-equal-to 200-degrees-c less-than-or-equal-to 200-degrees-C a superconducting material is obtained. Previous neutron diffraction experiments as well as the EXAFS measurements at the La L(III) edge indicate that extra anions lie in an interstitial site between the two (LaO) layers. Electron diffraction patterns clearly show the existence of an incommensurate modulation due to the presence of shear planes. A second phase is also pointed out which can be obtained as a major component when the fluorination temperature is raised to 230-degrees-C. This phase which is not a superconductor crystallizes with the monoclinic symmetry.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
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“Electron microscopy investigation of superconducting La2Cu(O,F)4+y oxyfluoride”. Weill F, Chevalier B, Chambon M, Tressaud A, Darriet B, Etourneau J, Van Tendeloo G, European journal of solid state and inorganic chemistry 30, 1095 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
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“Equivalence of 3D bipolarons in a strong magnetic field to 1D bipolarons”. Smondyrev MA, Kochetov EA, Verbist G, Peeters FM, Devreese JT, Europhysics letters 19, 519 (1992). http://doi.org/10.1209/0295-5075/19/6/013
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 2.095
Times cited: 17
DOI: 10.1209/0295-5075/19/6/013
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“Evidence of strain induced structural change in hetero-epitaxial NdNiO3 thin films with metal-insulator transition”. Laffez P, Lebedev OI, Ruello P, Desfeux R, Banerjee G, Capon F, European physical journal: applied physics 25, 25 (2004). http://doi.org/10.1051/epjap:2003087
Abstract: Neodymium nickelate thin films have been prepared on NdGaO3 substrates by RF magnetron sputtering and post-annealing treatment under oxygen pressure. Transport properties are found to depend strongly on film thickness. Thick films show transport properties close to bulk ceramics, while very thin films exhibit a large transition from metal to insulator which occurs over a wide temperature range with high resistivity. Structure and surface morphology of the films have been investigated by Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM). Thin films (approximate to17 nm) grow heteroepitaxially, while thicker films (approximate to73 nm) show a granular structure. The thinnest sample suggests a symmetry change induced by the epitaxial strain of the substrate. This paper discusses the relationship between microstructure and transport properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.684
Times cited: 12
DOI: 10.1051/epjap:2003087
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“Field-enhanced critical parameters in magnetically nanostructured superconductors”. Milošević, MV, Peeters FM, Europhysics letters 70, 670 (2005). http://doi.org/10.1209/epl/i2005-10032-4
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 40
DOI: 10.1209/epl/i2005-10032-4
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“A homologous series Pb2n+1Nb2n-1O7n-1 studied by electron microscopy”. Leroux C, Badeche T, Nihoul G, Richard O, Van Tendeloo G, European physical journal: applied physics 7, 33 (1999). http://doi.org/10.1051/epjap:1999196
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.684
Times cited: 4
DOI: 10.1051/epjap:1999196
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“Identification des substances inorganiques et organiques en surface des solides par la microsonde laser”. van Vaeck L, Gijbels R Eyrolles, Paris, page 27 (1992).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Induced order and re-entrant melting in classical two-dimensional binary clusters”. Nelissen K, Partoens B, Schweigert I, Peeters FM, Europhysics letters 74, 1046 (2006). http://doi.org/10.1209/epl/i2006-10044-6
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 17
DOI: 10.1209/epl/i2006-10044-6
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