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“The effect of surface defects on the vortex expulsion and penetration in mesoscopic superconducting disks”. Baelus BJ, Peeters FM, Physica: C : superconductivity
T2 –, 7th International Conference on Materials and Mechanisms of, Superconductive and High Temperature Superconductors, MAY 25-30, 2003, Rio de Janeiro, BRAZIL 408, 543 (2004). http://doi.org/10.1016/j.physc.2004.03.206
Abstract: Within the framework of the nonlinear Ginzburg-Landau theory we investigate how the vortex expulsion and penetration fields are influenced by the presence of surface defects in superconducting disks with zero thickness. We studied different types and sizes of defects. (C) 2004 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.404
Times cited: 1
DOI: 10.1016/j.physc.2004.03.206
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“Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy”. de Gryse O, Clauws P, Vanhellemont J, Lebedev OI, van Landuyt J, Simoen E, Claeys C, Journal of the electrochemical society 151, G598 (2004). http://doi.org/10.1149/1.1776592
Abstract: Infrared absorption spectra of oxygen precipitates in boron-doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function representation of composite materials. The aspect ratio of the platelet precipitates is determined by transmission electron microscopy measurements. The analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOγ precipitates are formed with the same composition as in the lightly doped case. In the heavily boron-doped (>10(18) cm(-3)) samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3, with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. (C) 2004 The Electrochemical Society.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.259
Times cited: 13
DOI: 10.1149/1.1776592
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“The modulated structure in the melilite CA2ZnGe2O7”. van Heurck C, Van Tendeloo G, Amelinckx S, Physics and chemistry of minerals 8, 441 (1992). http://doi.org/10.1007/BF00200967
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.538
Times cited: 19
DOI: 10.1007/BF00200967
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“Sources and elemental composition of ambient PM2.5 in three European cities”. Vallius M, Janssen NAH, Heinrich J, Hoek G, Ruuskanen J, Cyrys J, Van Grieken R, de Hartog JJ, Kreyling WG, Pekkanen J, The science of the total environment 337, 147 (2005). http://doi.org/10.1016/J.SCITOTENV.2004.06.018
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1016/J.SCITOTENV.2004.06.018
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“Effect of high-frequency electromagnetic field on Te+-implanted (001) Si</tex>”. Kalitzova M, Vlakhov E, Marinov Y, Gesheva K, Ignatova VA, Lebedev O, Muntele C, Gijbels R, Vacuum: the international journal and abstracting service for vacuum science and technology 76, 325 (2004). http://doi.org/10.1016/j.vacuum.2004.07.055
Abstract: The analysis of high-frequency electromagnetic field (HFEMF) effects on the microstructure and electrical properties of Te+ implanted (0 0 1) Si is reported. Cross-sectional high-resolution transmission electron microscopy (XHRTEM) demonstrates the formation of Te nanoclusters (NCs) embedded in the Si layer amorphized by implantation (a-Si) at fluences greater than or equal to 1 x 10(16) cm(-2). Post-implantation treatment with 0.45 MHz HFEMF leads to enlargement of Te NCs, their diffusion and accumulation at the a-Si surface and formation of laterally connected extended tellurium structures above the percolation threshold, appearing at an ion fluence of 1 x 10(17) cm(-2). AC electrical conductivity measurements show nearly four orders of magnitude decrease of impedance resistivity in this case, which is in good agreement with the results of our structural studies. The results obtained are discussed in terms of the two-phase isotropic spinodal structure. (C) 2004 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.53
Times cited: 2
DOI: 10.1016/j.vacuum.2004.07.055
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“Interpretation of electron diffraction from carbon nanotube bundles presenting precise helicity”. Colomer J-F, Henrard L, Launois P, Van Tendeloo G, Lucas AA, Lambin P, Physical review : B : condensed matter and materials physics 70, 075408 (2004). http://doi.org/10.1103/PhysRevB.70.075408
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 19
DOI: 10.1103/PhysRevB.70.075408
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Kirschhock CEA, Liang D, Aerts A, Aerts CA, Kremer SPB, Jacobs PA, Van Tendeloo G, Martens JA (2004) On the TEM and AFM evidence of zeosil nanoslabs present during the synthesis of silicalite-1 : reply. Weinheim, 4562–4564
Keywords: L1 Letter to the editor; Electron microscopy for materials research (EMAT)
Impact Factor: 11.994
DOI: 10.1002/anie.200460541
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“Synthesis, crystal structure, and magnetic properties of new layered hexagonal perovskite Ba8Ta4Ru8/3Co2/3O24”. Kopnin EM, Belik AA, Shpanchenko RV, Antipov EV, Izumi F, Takayama-Muromachi E, Hadermann J, Journal of solid state chemistry 177, 3499 (2004). http://doi.org/10.1016/j.jssc.2004.04.032
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 1
DOI: 10.1016/j.jssc.2004.04.032
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“Physical limits on atomic resolution”. van Dyck D, Van Aert S, den Dekker AJ, Microscopy and microanalysis 10, 153 (2004). http://doi.org/10.1017/S143192760404036X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.891
Times cited: 14
DOI: 10.1017/S143192760404036X
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“Crystal structure and properties of the new vanadyl(IV)phosphates Na2MVO(PO4)2 M=Ca and Sr”. Chernaya VV, Tsirlin AA, Shpanchenko RV, Antipov EV, Gippius AA, Morozova EN, Dyakov V, Hadermann J, Kaul EE, Geibel C, Journal of solid state chemistry 177, 2875 (2004). http://doi.org/10.1016/j.jssc.2004.04.035
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 6
DOI: 10.1016/j.jssc.2004.04.035
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“Synthesis and crystal structure of the novel Pb5Sb2MnO11 compound”. Abakumov AM, Rozova MG, Chizhov PS, Antipov EV, Hadermann J, Van Tendeloo G, Journal of solid state chemistry 177, 2855 (2004). http://doi.org/10.1016/j.jssc.2004.04.047
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 3
DOI: 10.1016/j.jssc.2004.04.047
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“Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Journal of applied physics 96, 2305 (2004). http://doi.org/10.1063/1.1767619
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 14
DOI: 10.1063/1.1767619
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“Molecular dynamics simulations for the growth of diamond-like carbon films from low kinetic energy species”. Neyts E, Bogaerts A, Gijbels R, Benedikt J, van den Sanden MCM, Diamond and related materials 13, 1873 (2004). http://doi.org/10.1016/j.diamond.2004.05.011
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.561
Times cited: 53
DOI: 10.1016/j.diamond.2004.05.011
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“Influence of well-width fluctuations on the binding energy of excitons, charged excitons, and biexcitons in GaAs-based quantum wells”. Filinov AV, Riva C, Peeters FM, Lozovik YE, Bonitz M, Physical review : B : condensed matter and materials physics 70, 035323 (2004). http://doi.org/10.1103/PhysRevB.70.035323
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 77
DOI: 10.1103/PhysRevB.70.035323
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“Modeling of the target surface modification by reactive ion implantation during magnetron sputtering”. Depla D, Chen ZY, Bogaerts A, Ignatova V, de Gryse R, Gijbels R, Journal of vacuum science and technology: A: vacuum surfaces and films 22, 1524 (2004). http://doi.org/10.1116/1.1705641
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.374
Times cited: 13
DOI: 10.1116/1.1705641
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“Computer simulations of crater profiles in glow discharge optical emission spectrometry: comparison with experiments and investigation of the underlying mechanisms”. Bogaerts A, Verscharen W, Steers E, Spectrochimica acta: part B : atomic spectroscopy 59, 1403 (2004). http://doi.org/10.1016/j.sab.2004.06.005
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.241
Times cited: 14
DOI: 10.1016/j.sab.2004.06.005
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“Model based quantification of EELS spectra”. Verbeeck J, Van Aert S, Ultramicroscopy 101, 207 (2004). http://doi.org/10.1016/j.ultramic.2004.06.004
Abstract: Recent advances in model based quantification of electron energy loss spectra (EELS) are reported. The maximum likelihood method for the estimation of physical parameters describing an EELS spectrum, the validation of the model used in this estimation procedure, and the computation of the attainable precision, that is, the theoretical lower bound on the variance of these estimates, are discussed. Experimental examples on An and GaAs samples show the power of the maximum likelihood method and show that the theoretical prediction of the attainable precision can be closely approached even for spectra with overlapping edges where conventional EELS quantification fails. To provide end-users with a low threshold alternative to conventional quantification, a user friendly program was developed which is freely available under a GNU public license. (C) 2004 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 147
DOI: 10.1016/j.ultramic.2004.06.004
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“Spin-dependent transmission through a chain of rings : influence of a periodically modulated spin-orbit interaction strength or ring radius”. Molnar B, Vasilopoulos P, Peeters FM, Applied physics letters 85, 612 (2004). http://doi.org/10.1063/1.1775283
Abstract: We study ballistic electron transport through a finite chain of quantum circular rings in the presence of spin-orbit interaction of strength alpha. For a single ring, the transmission and reflection coefficients are obtained analytically and from them the conductance for a chain of rings as a function of alpha and of the wave vector k of the incident electron. We show that due to destructive spin interferences, the chain can be totally opaque for certain ranges of k, the width of which depends on the value of alpha. A periodic modulation of the strength alpha or of the ring radius widens the gaps considerably and produces a nearly binary conductance output. (C) 2004 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 26
DOI: 10.1063/1.1775283
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“SrMn3O6: an incommensurate modulated tunnel structure”. Gillie LJ, Hadermann J, Pérez O, Martin C, Hervieu M, Suard E, Journal of solid state chemistry 177, 3383 (2004). http://doi.org/10.1016/j.jssc.2004.05.057
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 19
DOI: 10.1016/j.jssc.2004.05.057
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“Effect of charge transfer on EELS integrated cross sections in Mn and Ti oxides”. Potapov PL, Jorissen K, Schryvers D, Lamoen D, Physical review : B : condensed matter and materials physics 70, 045106 (2004). http://doi.org/10.1103/PhysRevB.70.045106
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 28
DOI: 10.1103/PhysRevB.70.045106
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“Superconducting vortex state in a mesoscopic disk containing a blind hole”. Berdiyorov GR, Milošević, MV, Baelus BJ, Peeters FM, Physical review : B : condensed matter and materials physics 70, 024508 (2004). http://doi.org/10.1103/PhysRevB.70.024508
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 39
DOI: 10.1103/PhysRevB.70.024508
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“Relativistic virial relations for both homogeneous and spatially varying electron liquids”. Leys FE, March NH, Lamoen D, Physics And Chemistry Of Liquids 42, 423 (2004). http://doi.org/10.1080/00319100410001697873
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.145
DOI: 10.1080/00319100410001697873
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“Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications”. Lubyshev D, Fastenau JM, Fang X-M, Wu Y, Doss C, Snyder A, Liu WK, Lamb MSM, Bals S, Song C, Journal of vacuum science &, technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena 22, 1565 (2004). http://doi.org/10.1116/1.1691412
Abstract: Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 25
DOI: 10.1116/1.1691412
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“High precision determination of the elastic strain of InGaN/GaN multiple quantum wells”. Wu MF, Zhou S, Yao S, Zhao Q, Vantomme A, van Daele B, Piscopiello E, Van Tendeloo G, Tong YZ, Yang ZJ, Yu TJ, Zhang GY, Journal of vacuum science and technology: B: microelectronics and nanometer structures 22, 920 (2004). http://doi.org/10.1116/1.1715085
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1116/1.1715085
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“Determination of the electron effective band mass in amorphous carbon from density-functional theory calculations”. Titantah JT, Lamoen D, Physical review : B : condensed matter and materials physics 70, 033101 (2004). http://doi.org/10.1103/PhysRevB.70.033101
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 24
DOI: 10.1103/PhysRevB.70.033101
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“Structure and microstructure of colossal magnetoresistant materials”. Van Tendeloo G, Lebedev OI, Hervieu M, Raveau B, Reports on progress in physics 67, 1315 (2004). http://doi.org/10.1088/0034-4885/67/8/R01
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 14.311
Times cited: 79
DOI: 10.1088/0034-4885/67/8/R01
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“Scheme for the generation of entangled atomic state in cavity QED”. Duan ZL, Chen ZY, Zhang JT, Feng XL, Xu ZZ, European physical journal : D : atomic, molecular and optical physics 30, 275 (2004). http://doi.org/10.1140/epjd/e2004-00086-2
Abstract: We propose a scheme to generate the entangled state of two Lambda-type three-level atoms trapped in a cavity. The atoms are initially prepared in their excited state and the cavity in vacuum state. Each atom has two possibilities to deexcite to one of the ground states. If two different polarized photons are detected subsequently, it is sure that both atoms are in different ground states. But which atom is in which ground state cannot be determined, the atoms are thus prepared in a superposition of two ground states, i.e., an entangled state. In comparison with the proposal of Hong and Lee [Phys. Rev. Lett. 89, 237901 (2002)], the requirement of a single polarized photon source can be avoided in our scheme.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.288
Times cited: 4
DOI: 10.1140/epjd/e2004-00086-2
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“Spatial ordering of charge and spin in quasi-one-dimensional Wigner molecules”. Szafran B, Peeters FM, Bednarek S, Chwiej T, Adamowski J, Physical review : B : condensed matter and materials physics 70, 035401 (2004). http://doi.org/10.1103/PhysRevB.70.035401
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 50
DOI: 10.1103/PhysRevB.70.035401
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“Investigation of growth mechanisms of clusters in a silane discharge with the use of a fluid model”. de Bleecker K, Bogaerts A, Goedheer W, Gijbels R, IEEE transactions on plasma science 32, 691 (2004). http://doi.org/10.1109/TPS.2004.826095
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.052
Times cited: 29
DOI: 10.1109/TPS.2004.826095
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“Magnetic field dependence of the normal mode spectrum of a planar complex plasma cluster”. Kong M, Ferreira WP, Partoens B, Peeters FM, IEEE transactions on plasma science 32, 569 (2004). http://doi.org/10.1109/TPS.2004.826084
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.052
Times cited: 4
DOI: 10.1109/TPS.2004.826084
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