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Author Title Year Publication Volume Times cited Additional Links
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope 1996 Nuclear instruments and methods in physics research B112 4 UA library record; WoS full record; WoS citing articles
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope 1996 Materials Research Society symposium proceedings 404 1 UA library record; WoS full record; WoS citing articles
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. On the interpretation of HREM images of partially ordered alloys 1995 Ultramicroscopy 60 20 UA library record; WoS full record; WoS citing articles
Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J. Ordering and defects in BanTaxTiyO3n ternary oxides 1994 Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences UA library record; WoS full record;
Van Tendeloo, G.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Verheijen, M.A.; van Loosdrecht, P.H.M.; Meijer, G. Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy 1992 Journal of physical chemistry 96 33 UA library record; WoS full record; WoS citing articles
Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. Photoelectric and electrical responses of several erbium silicide/silicon interfaces 1996 Applied surface science T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE 102 3 UA library record; WoS full record; WoS citing articles
Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope 1995 Materials science and technology 11 7 UA library record; WoS full record; WoS citing articles
Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope 1995 Materials science and technology 11 7 UA library record; WoS full record; WoS citing articles
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.; Dinescu, M. TEM study of laser induced phase transition in iron thin films 1994 Materials research bulletin 29 2 UA library record; WoS full record; WoS citing articles
Zhang, Z.; Ma, L.N.; Liao, X.Z.; van Landuyt, J. A transmission electron-microscopy study of crystalline surface domains on al-co decagonal quasi-crystals and the \tau2-Al13CO4 approximant 1994 Philosophical magazine letters 70 4 UA library record; WoS full record; WoS citing articles
Zhang, Z.; Geng, W.; van Landuyt, J.; Van Tendeloo, G. A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals 1995 Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 71 7 UA library record; WoS full record; WoS citing articles
Van Tendeloo, G.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; Amelinckx, S. Up close: Center for Electron Microscopy of Materials Science at the University of Antwerp 1994 MRS bulletin UA library record; WoS full record;
Schryvers, D.; Van Landuyt, J. Electron microscopy study of twin sequences and branching in NissAl34 3R martensite 1992 ICOMAT
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation 2001 Institute of physics conference series UA library record; WoS full record;
van Landuyt, J.; Van Tendeloo, G. Charcaterization by high-resolution transmission electron microscopy 1998 UA library record; WoS full record;
De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy 2002 UA library record; WoS full record;
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation 1999 Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. Comparative study of structural properties and photoluminescence in InGaN layers with a high In content 2000 Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS 5 UA library record; WoS full record;
Schryvers, D.; Goessens, C.; van Renterghem, W.; van Landuyt, J.; de Keyzer, R. Conventional and HREM study of structural defects in nanostructured silver halides 1998 UA library record
Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study 2000 UA library record; WoS full record;
van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. Defect related growth of tabular AgCl(100) crystals: a TEM study 1998 UA library record; WoS full record;
van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. Defects in AgCl and AgBr(100) tabular crystals studied by TEM 1998 UA library record
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. EFTEM study of plasma etched low-k Si-O-C dielectrics 2001 Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. Electron microscopy: principles and fundamentals 1997 UA library record
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization 2000 Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA 338-3 2 UA library record; WoS full record; WoS citing articles
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM 1999 Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171 40 UA library record; WoS full record; WoS citing articles
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM 1999 Physica status solidi: A: applied research 171 40 UA library record; WoS full record; WoS citing articles
Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. Handbook of microscopy: applications in materials science, solid-state physics and chemistry 1997 UA library record
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. High resolution TEM observation of in situ colloid formation in CaF2 crystals 1997 Materials science forum 239-241 3 UA library record; WoS full record; WoS citing articles
van Landuyt, J.; Van Tendeloo, G. HREM for characterisation of nanoscale microstructures 1998 UA library record