|
“Critical assessments and thermodynamic modeling of BaO-SiO2 and SiO2-TiO2 systems and their extensions into liquid immiscibility in the BaO-SiO2-TiO2 system”. Boulay E, Nakano J, Turner S, Idrissi H, Schryvers D, Godet S, Calphad computer coupling of phase diagrams and thermochemistry 47, 68 (2014). http://doi.org/10.1016/j.calphad.2014.06.004
Abstract: This study discusses rational reproduction of liquid immiscibility in the BaO-SiO2-TiO2 system. While a ternary assessment requires sub-binary descriptions in the same thermodynamic model, the related sub-binary systems BaO-SiO2, BaO-TiO2 and SiO2-TiO2 liquid and solid phases have been evaluated using different thermodynamic models in the literature. In this study, BaO-SiO2 and SiO2-TiO2 were assessed using the Ionic Two Sublattice model (I2SL) based on experimental data from the literature. BaO-TiO2 was already assessed using this model. Binary descriptions developed were then used for the assessment of liquid immiscibility in the BaO-SiO2-TiO2 system. Ternary interaction parameters were found necessary for rational reproduction of the new ternary experimental data gathered in the present work. The model parameters for each system were evaluated using a CAPLHAD approach. A set of parameters is proposed. They show good agreement between the calculated and experimental equilibrium liquidus, liquid immiscibility and thermochemical properties in the BaO-SiO2-TiO2 system. (C) 2014 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.6
Times cited: 9
DOI: 10.1016/j.calphad.2014.06.004
|
|
“Plasmonic effects in the neutralization of slow ions at a metallic surface”. Bercx M, Mayda S, Depla D, Partoens B, Lamoen D, Contributions to Plasma Physics (2023). http://doi.org/10.1002/ctpp.202300054
Abstract: Secondary electron emission is an important process that plays a significant role in several plasma‐related applications. As measuring the secondary electron yield experimentally is very challenging, quantitative modelling of this process to obtain reliable yield data is critical as input for higher‐scale simulations. Here, we build upon our previous work combining density functional theory calculations with a model originally developed by Hagstrum to extend its application to metallic surfaces. As plasmonic effects play a much more important role in the secondary electron emission mechanism for metals, we introduce an approach based on Poisson point processes to include both surface and bulk plasmon excitations to the process. The resulting model is able to reproduce the yield spectra of several available experimental results quite well but requires the introduction of global fitting parameters, which describe the strength of the plasmon interactions. Finally, we use an in‐house developed workflow to calculate the electron yield for a list of elemental surfaces spanning the periodic table to produce an extensive data set for the community and compare our results with more simplified approaches from the literature.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Impact Factor: 1.6
DOI: 10.1002/ctpp.202300054
|
|
“Prospects for out-of-plane magnetic field measurements through interference of electron vortex modes in the TEM”. Guzzinati G, Béché, A, McGrouther D, Verbeeck J, Journal of optics 21, 124002 (2019). http://doi.org/10.1088/2040-8986/AB51FC
Abstract: Magnetic field mapping in transmission electron microscopy is commonplace, but all conventional methods provide only a projection of the components of the magnetic induction perpendicular to the electron trajectory. Recent experimental advances with electron vortices have shown that it is possible to map the out of plane magnetic induction in a TEM setup via interferometry with a specifically prepared electron vortex state carrying high orbital angular momentum (OAM). The method relies on the Aharonov?Bohm phase shift that the electron undergoes when going through a longitudinal field. Here we show how the same effect naturally occurs for any electron wave function, which can always be described as a superposition of OAM modes. This leads to a clear connection between the occurrence of high-OAM partial waves and the amount of azimuthal rotation in the far field angular distribution of the beam. We show that out of plane magnetic field measurement can thus be obtained with a much simpler setup consisting of a ring-like aperture with azimuthal spokes. We demonstrate the experimental setup and explore the achievable sensitivity of the magnetic field measurement.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.741
Times cited: 3
DOI: 10.1088/2040-8986/AB51FC
|
|
“One-step synthesis of shelled PbS nanoparticles in a layered double hydroxide matrix”. Lukashin AV, Eliseev AA, Zhuravleva NG, Vertegel AA, Tretyakov YD, Lebedev OI, Van Tendeloo G, Mendeleev communications , 174 (2004). http://doi.org/10.1070/MC2004v014n04ABEH001973
Abstract: The one-step preparation of capped PbS nanoparticles in an inorganic matrix via UV-induced decomposition of lead thiosulfate complexes intercalated into a hydrotalcite-type layered double hydroxide is reported.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.741
Times cited: 9
DOI: 10.1070/MC2004v014n04ABEH001973
|
|
“Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas”. Volkov VV, van Landuyt J, Marushkin KM, Gijbels R, Férauge C, Vasilyev MG, Shelyakin AA, Sokolovsky AA, Journal of crystal growth 173, 285 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.751
Times cited: 4
|
|
“Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals”. Goessens C, Schryvers D, van Landuyt J, de Keyzer R, Journal of crystal growth 172, 426 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 15
|
|
“The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study”. Frangis N, Stoemenos J, van Landuyt J, Nejim A, Hemment PLF, Journal of crystal growth 181, 218 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 9
|
|
“Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction”. Frangis N, van Landuyt J, Kaltsas G, Travlos A, Nassiopoulos AG, Journal of crystal growth 172, 175 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 29
|
|
“Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1”. Bernaerts D, Amelinckx S, Van Tendeloo G, van Landuyt J, Journal of crystal growth 172, 433 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 23
|
|
“Defects and growth mechanisms of AgCl(100) tabular crystals”. van Renterghem W, Goessens C, Schryvers D, van Landuyt J, Verrept P, Bollen D, van Roost C, de Keyzer R, Journal of crystal growth 187, 410 (1998). http://doi.org/10.1016/S0022-0248(98)00004-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 8
DOI: 10.1016/S0022-0248(98)00004-9
|
|
“Hetero-epitaxial growth of CoSi2 thin films on Si(100) : template effects and epitaxial orientations”. Buschmann V, Rodewald M, Fuess H, Van Tendeloo G, Schaffer C, Journal of crystal growth 191, 430 (1998). http://doi.org/10.1016/S0022-0248(98)00167-5
Abstract: This HREM investigation focuses on the influence of point defects on the final epitaxial relation and atomic interface configuration in a CoSi2/Si(1 0 0) heterostructure. A two-step SPE-MBE grown CoSi2/Si(1 0 0) system is used and, by altering the number of deposited Co monolayers in the template layer, the point defect behavior is studied. We propose a film growth model in which the knowledge about the reconstructed (2 x 1) : Si(1 0 0) surface, the point defect behavior in the presence of an interface, especially a silicide interface, the migration of point defects through a lattice by formation of [1 0 0]-split interstitial (dumbbell) atomic configurations, and a new type of extended defect configurations in diamond type materials will all amalgamate. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 6
DOI: 10.1016/S0022-0248(98)00167-5
|
|
“Growth of pure and doped Rb2ZnCl4and K2ZnCl4 single crystals by Czochralski technique”. Stefan M, Nistor SV, Mateescu DC, Abakumov AM, Journal of crystal growth 200, 148 (1999). http://doi.org/10.1016/S0022-0248(98)01247-0
Abstract: High-quality single crystals of Rb2ZnCl4 and K2ZnCl4, pure or doped with Cu, Mn, Cd, Tl, Sn, Pb and In cations, were grown by Czochralski technique in argon atmosphere, using an experimental setup that allows direct visual access to the whole growth zone. Slowly cooled crystals exhibit excellent cleavage properties. Fastly cooled crystals do cleave poorly. As shown by X-ray diffraction studies, such K2ZnCl4 samples exhibit inclusions of the high-temperature Pmcn phase with lattice parameters a = 7.263(2) Angstrom, b = 12.562(2) Angstrom and c = 8.960(4) Angstrom in the P2(1) cn room temperature stable phase. ESR and optical spectroscopy studies revealed the localization and valence state of the cation dopants. (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 13
DOI: 10.1016/S0022-0248(98)01247-0
|
|
“Multiply twinned C60 and C70 nanoparticles”. Pauwels B, Bernaerts D, Amelinckx S, Van Tendeloo G, Joutsensaari J, Kauppinen EI, Journal of crystal growth 200, 126 (1999). http://doi.org/10.1016/S0022-0248(98)01285-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 17
DOI: 10.1016/S0022-0248(98)01285-8
|
|
“Growth kinetic of MgO film on r-plane of sapphire: microstructural study”. Lei CH, Van Tendeloo G, Lisoni JG, Siegert M, Schubert J, Journal of crystal growth 226, 419 (2001). http://doi.org/10.1016/S0022-0248(01)01396-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 7
DOI: 10.1016/S0022-0248(01)01396-3
|
|
“Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation”. Lei CH, Van Tendeloo G, Siegert M, Schubert J, Buchal C, Journal of crystal growth 222, 558 (2001). http://doi.org/10.1016/S0022-0248(00)00943-X
Abstract: Yittria-stabilized zirconia (YSZ) films doped with 3 and 9 vol%. Y(2)O(3), respectively, are epitaxially deposited on (0 0 1) silicon substrates by means of pulsed laser deposition (PLD) technique. Transmission electron microscopy (TEM) and X-ray diffraction are mainly combined to study the film microstructure. It is: found that the film structure strongly depends on the amount of Y(2)O(3) dopant. 99/0 Y(2)O(3)-doped films display a near cubic structure; 45 degrees 1/2(1 1 0) dislocations are the main defects in the film and thermal cracks are formed during cooling. The 3% Y(2)O(3)-doped films are dominated by {1 1 0} twin-related tetragonal domains in which monoclinic phase is found. The films are free of thermal cracks even for films thicker than 2 mum. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 12
DOI: 10.1016/S0022-0248(00)00943-X
|
|
“Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures”. Jacobs K, van Daele B, Leys M, Moerman I, Van Tendeloo G, Journal of crystal growth 248, 498 (2003). http://doi.org/10.1016/S0022-0248(02)01847-X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 14
DOI: 10.1016/S0022-0248(02)01847-X
|
|
“Epitaxial Sr4Fe6O13\pm\delta films obtained by pulsed laser deposition”. Pardo JA, Santiso J, Solis C, Garcia G, Figueras A, Rossell MD, Van Tendeloo G, Journal of crystal growth 262, 334 (2004). http://doi.org/10.1016/j.jcrysgro.2003.10.037
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 8
DOI: 10.1016/j.jcrysgro.2003.10.037
|
|
“Growth and characterization of a-axis textured ZnO thin films”. Nistor LC, Ghica C, Matei D, Dinescu G, Dinescu M, Van Tendeloo G, Journal of crystal growth 277, 26 (2005). http://doi.org/10.1016/j.jcrysgro.2004.12.162
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 44
DOI: 10.1016/j.jcrysgro.2004.12.162
|
|
“Mechanism of preferential orientation in sputter deposited titanium nitride and yttria-stabilized zirconia layers”. Mahieu S, Ghekiere P, de Winter G, Heirwegh S, Depla D, de Gryse R, Lebedev OI, Van Tendeloo G, Journal of crystal growth 279, 100 (2005). http://doi.org/10.1016/j.jcrysgro.2005.02.014
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 41
DOI: 10.1016/j.jcrysgro.2005.02.014
|
|
“Structural and optical properties of CdSe quantum dots induced by amorphous Se”. Aichele T, Robin I-C, Bougerol C, André, R, Tatarenko S, Van Tendeloo G, Journal of crystal growth 301, 281 (2007). http://doi.org/10.1016/j.jcrysgro.2006.11.077
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 5
DOI: 10.1016/j.jcrysgro.2006.11.077
|
|
“Crystal growth of CsCl-type Yb0.24Sn0.76Ru”. Klimczuk T, Wang CH, Xu Q, Lawrence J, Durakiewicz T, Ronning F, Llobet A, Bauer ED, Griveau J-C, Sadowski W, Zandbergen HW, Thompson JD, Cava RJ, Journal of crystal growth 318, 1005 (2011). http://doi.org/10.1016/j.jcrysgro.2010.10.045
Abstract: The YbRuSn ternary system was investigated and a new material, Yb0.24Sn0.76Ru, with a simple cubic crystal structure, was discovered. Yb0.24Sn0.76Ru has a smaller lattice parameter a=3.217(4) Å, than its isostructural YbRu analogue (a=3.360 Å). Both X-ray diffraction and electron microscopy techniques were used to refine the crystal structure of Yb0.24Sn0.76Ru. It was found that a new compound forms in the CsCl structure, with Ru on the 1a site and a (Yb, Sn) mixture on site 1b. The XRD Rietveld analysis provides the occupation of Yb equal to 0.24, in agreement with the single crystal nano-electron diffraction refinement, which gives the occupation 0.21.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 1
DOI: 10.1016/j.jcrysgro.2010.10.045
|
|
“C-H\cdots X (X = S, P) hydrogen bonding : the complexes of halothane with dimethyl sulfide and trimethylphosphine”. Michielsen B, Verlackt C, van der Veken BJ, Herrebout WA, Journal Of Molecular Structure 1023, 90 (2012). http://doi.org/10.1016/j.molstruc.2012.02.063
Abstract: The formation of CH⋯S and CH⋯P hydrogen bonded complexes of halothane, CHBrClCF3, with dimethyl sulfide(-d6) and trimethylphosphine(-d9) have been studied in solutions of liquid krypton using infrared and Raman spectroscopy. In the 1:1 complexes, the halothane CH stretching mode is found to be red-shifted by 43 cm−1 in the dimethyl sulfide complex, and by 63 cm−1 in the trimethylphosphine complex. The complexation enthalpies were derived and amount to −10.7(2) and −11.2(2) kJ mol−1 for the respective complexes. The experiments were supported by ab initio calculations and Monte Carlo simulations. The obtained data for the CH⋯S and CH⋯P hydrogen bonds is compared to that of corresponding CH⋯O and CH⋯N hydrogen bonds.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.753
Times cited: 21
DOI: 10.1016/j.molstruc.2012.02.063
|
|
“Orientational disorder in some molecular solids in relation to the boson peak in glasses”. Lamoen D, March NH, Physics letters : A 373, 799 (2009). http://doi.org/10.1016/j.physleta.2009.01.003
Abstract: Orientational disorder in some molecular solids is discussed in relation to the emphasis placed on transverse vibrational modes in glasses as the origin of the observed boson peak in two very recent contributions in Nature Materials. In particular, facts are here presented for (i) CH4, (ii) C60 and (iii) ethanol in their solid phases for (a) specific heat and (b) neutron scattering. The results for ethanol in particular do not fit in with the interpretation of the boson peak in terms of transverse acoustic phonons in disordered systems. Glasses will therefore have to be separated into at least two classes where the physical interpretation of the boson peak is concerned.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.772
Times cited: 3
DOI: 10.1016/j.physleta.2009.01.003
|
|
“The effect of molecular structure of organic compound on the direct high-pressure synthesis of boron-doped nanodiamond: Effect of organic compound on synthesis of boron-doped nanodiamond”. Ekimov EA, Kudryavtsev OS, Turner S, Korneychuk S, Sirotinkin VP, Dolenko TA, Vervald AM, Vlasov II, Physica status solidi : A : applications and materials science 213, 2582 (2016). http://doi.org/10.1002/pssa.201600181
Abstract: Evolution of crystalline phases with temperature has been studied in materials produced by high-pressure high-temperature treatment of 9-borabicyclo[3.3.1]nonane dimer (9BBN), triphenylborane and trimesitylborane. The boron-doped diamond nanoparticles with a size below 10 nm were obtained at 8–9 GPa and temperatures 970–1250 °C from 9BBN only. Bridged structure and the presence of boron atom in the carbon cycle of 9BBN were revealed to be a key point for the direct synthesis of doped diamond nanocrystals. The diffusional transformation of the disordered carbon phase is suggested to be the main mechanism of the nanodiamond formation from 9BBN in the temperature range of 970–1400 °C. Aqueous suspensions of primary boron-doped diamond nanocrystals were prepared upon removal of non-diamond phases that opens wide opportunities for application of this new nanomaterial in electronics and biotechnologies.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 8
DOI: 10.1002/pssa.201600181
|
|
Sankaran KJ, Hoang DQ, Srinivasu K, Korneychuk S, Turner S, Drijkoningen S, Pobedinskas P, Verbeeck J, Leou KC, Lin IN, Haenen K, Physica status solidi : A : applications and materials science 213, 2654 (2016). http://doi.org/10.1002/PSSA.201600233
Abstract: Utilization of Au and nanocrystalline diamond ( NCD) as interlayers noticeably modifies the microstructure and field electron emission ( FEE) properties of hexagonal boron nitride nanowalls ( hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3V mu m(-1), attaining FEE current density of 2.58mAcm(-2) and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride ( aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 5
DOI: 10.1002/PSSA.201600233
|
|
“Surface passivation of CIGS solar cells using gallium oxide”. Garud S, Gampa N, Allen TG, Kotipalli R, Flandre D, Batuk M, Hadermann J, Meuris M, Poortmans J, Smets A, Vermang B, Physica status solidi : A : applications and materials science 215, 1700826 (2018). http://doi.org/10.1002/PSSA.201700826
Abstract: This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 8
DOI: 10.1002/PSSA.201700826
|
|
“Measurement of the Indirect Band Gap of Diamond with EELS in STEM”. Korneychuk S, Guzzinati G, Verbeeck J, Physica status solidi : A : applications and materials science 215, 1800318 (2018). http://doi.org/10.1002/pssa.201800318
Abstract: In this work, a simple method to measure the indirect band gap of diamond with electron energy loss spectroscopy (EELS) in transmission electron microscopy (TEM) is showed. The authors discuss the momentum space resolution achievable with EELS and the possibility of deliberately selecting specific transitions of interest. Based on a simple 2 parabolic band model of the band structure, the authors extend our predictions from the direct band gap case discussed in previous work, to the case of an indirect band gap. Finally, the authors point out the emerging possibility to partly reconstruct the band structure with EELS exploiting our simplified model of inelastic scattering and support it with experiments on diamond.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 6
DOI: 10.1002/pssa.201800318
|
|
“Dislocation distributions in brown diamond”. Willems B, Martineau PM, Fisher D, van Royen J, Van Tendeloo G, Physica status solidi: A: applied research 203, 3076 (2006). http://doi.org/10.1002/pssa.200671129
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 21
DOI: 10.1002/pssa.200671129
|
|
“First-principles characterization of amorphous carbon nitride systems: structural and electronic properties”. Titantah JT, Lamoen D, Physica status solidi: A: applied research 203, 3191 (2006). http://doi.org/10.1002/pssa.200671107
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 3
DOI: 10.1002/pssa.200671107
|
|
“Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study”. Mortet V, Zhang L, Eckert M, D'Haen J, Soltani A, Moreau M, Troadec D, Neyts E, De Jaeger JC, Verbeeck J, Bogaerts A, Van Tendeloo G, Haenen K, Wagner P, Physica status solidi : A : applications and materials science 209, 1675 (2012). http://doi.org/10.1002/pssa.201200581
Abstract: In this work, a detailed structural and spectroscopic study of nanocrystalline diamond (NCD) thin films grown by a continuous bias assisted CVD growth technique is reported. This technique allows the tuning of grain size and phase purity in the deposited material. The crystalline properties of the films are characterized by SEM, TEM, EELS, and Raman spectroscopy. A clear improvement of the crystalline structure of the nanograined diamond film is observed for low negative bias voltages, while high bias voltages lead to thin films consisting of diamond grains of only ∼10 nm nanometer in size, showing remarkable similarities with so-called ultrananocrystalline diamond. These layers arecharacterized by an increasing amount of sp2-bonded carbon content of the matrix in which the diamond grains are embedded. Classical molecular dynamics simulations support the observed experimental data, giving insight in the underlying mechanism for the observed increase in deposition rate with bias voltage. Furthermore, a high atomic concentration of hydrogen has been determined in these films. Finally, Raman scattering analyses confirm that the Raman line observed at ∼1150 cm−1 cannot be attributed to trans-poly-acetylene, which continues to be reported in literature, reassigning it to a deformation mode of CHx bonds in NCD.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.775
Times cited: 31
DOI: 10.1002/pssa.201200581
|