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“Ab initio modeling of few-layer dilute magnetic semiconductors”. Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX , 141 (2021). http://doi.org/10.1109/SISPAD54002.2021.9592535
Abstract: We present a computational model to model the magnetic structure of two-dimensional (2D) dilute-magnetic-semiconductors (DMS) both the monolayers and multilayers using first-principles density functional theory (DFT), as well as their magnetic phase transition as a function of temperature using Monte-Carlo simulations. Using our method, we model the magnetic structure of bulk, bilayer, and monolayer MoS2 substitutionally doped with Fe atoms. We find that the out-of-plane interaction in bilayer MoS2 is weakly ferromagnetic, whereas in bulk MoS2 it is strongly anti-ferromagnetic. Finally, we show that the magnetic order is more robust in bilayer Fe-doped MoS2 compared to the monolayer and results in a room-temperature FM at an atomic substitution of 14-16%.
Keywords: P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
DOI: 10.1109/SISPAD54002.2021.9592535
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“Ab-initio study of magnetically intercalated Tungsten diselenide”. Reyntjens PD, Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 23-OCT 06, 2020 , 97 (2020). http://doi.org/10.23919/SISPAD49475.2020.9241592
Abstract: We theoretically investigate the effect of intercalation of third row transition metals (Co, Cr, Fe, Mn, Ti and V) in the layers of WSe2. Using density functional theory (DFT), we investigate the structural stability. We also compute the DFT energies of various magnetic spin configurations. Using these energies, we construct a Heisenberg Hamiltonian and perform a Monte Carlo study on each WSe2 + intercalant system to estimate the Curie or Neel temperature. We find ferromagnetic ground states for Ti and Cr intercalation, with Curie temperatures of 31K and 225K, respectively. In Fe-intercalated WSe2, we predict that antiferromagnetic ordering is present up to 564K. For V intercalation, we find that the system exhibits a double phase transition.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
DOI: 10.23919/SISPAD49475.2020.9241592
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“Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects”. Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX , 92 (2018). http://doi.org/10.1109/SISPAD.2018.8551720
Abstract: We model transport through two-dimensional topological insulator (TI) nanoribbons. To model the quantum transport, we employ the non-equilibrium Green's function approach. With the presented approach, we study the effect of lattice imperfections on the carrier transport. We observe that the topologically protected edge states of TIs are robust against a high percentage (2%) of vacancy defects. We also investigate tunneling of the edge states in two decoupled TI nanoribbons.
Keywords: P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
DOI: 10.1109/SISPAD.2018.8551720
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“Strained graphene structures : from valleytronics to pressure sensing”. Milovanović, SP, Peeters FM, Nanostructured Materials For The Detection Of Cbrn , 3 (2018). http://doi.org/10.1007/978-94-024-1304-5_1
Abstract: Due to its strong bonds graphene can stretch up to 25% of its original size without breaking. Furthermore, mechanical deformations lead to the generation of pseudo-magnetic fields (PMF) that can exceed 300 T. The generated PMF has opposite direction for electrons originating from different valleys. We show that valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by a Gaussian-like deformation allows electrons from only one valley to transmit and a current of electrons from a single valley is generated at the opposite side of the locally strained region. Furthermore, applying a pressure difference between the two sides of a graphene membrane causes it to bend/bulge resulting in a resistance change. We find that the resistance changes linearly with pressure for bubbles of small radius while the response becomes non-linear for bubbles that stretch almost to the edges of the sample. This is explained as due to the strong interference of propagating electronic modes inside the bubble. Our calculations show that high gauge factors can be obtained in this way which makes graphene a good candidate for pressure sensing.
Keywords: P1 Proceeding; Pharmacology. Therapy; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Times cited: 6
DOI: 10.1007/978-94-024-1304-5_1
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“Ultrascaled graphene-capped interconnects : a quantum mechanical study”. Reyntjens P, Van de Put M, Vandenberghe WG, Sorée B, Proceedings of the IEEE ... International Interconnect Technology Conference
T2 –, IEEE International Interconnect Technology Conference (IITC) / IEEE, Materials for Advanced Metallization Conference (MAM), MAY 22-25, 2023, Dresden, Germany , 1 (2023). http://doi.org/10.1109/IITC/MAM57687.2023.10154656
Abstract: In this theoretical study, we assess the impact of a graphene capping layer on the resistivity of defective, extremely scaled interconnects. We investigate the effect of graphene capping on the electronic transport in ultrascaled interconnects, in the presence of grain boundary defects in the metal layer. We compare the results obtained using our quantum mechanical model to a simple parallel-conductor model and find that the parallel-conductor model does not capture the effect of the graphene cap correctly. At 0.5 nm metal thickness, the parallel-conductor model underestimates the conductivity by 3.0% to 4.0% for single-sided and double sided graphene capping, respectively.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
DOI: 10.1109/IITC/MAM57687.2023.10154656
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“Quantum transport study of contact resistance of edge- and top-contacted two-dimensional materials”. Deylgat E, Chen E, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2023, Kobe, Japan , 45 (2023). http://doi.org/10.23919/SISPAD57422.2023.10319537
Abstract: We calculate the contact resistance for an edge- and top-contacted 2D semiconductor. The contact region consists of a metal contacting a monolayer of MoS2 which is otherwise surrounded by SiO2. We use the quantum transmitting boundary method to compute the contact resistance as a function of the 2D semiconductor doping concentration. An effective mass Hamiltonian is used to describe the properties of the various materials. The electrostatic potentials are obtained by solving the Poisson equation numerically. We incorporate the effects of the image-force barrier lowering on the Schottky barrier and examine the impact on the contact resistance. At low doping concentrations, the contact resistance of the top contact is lower compared to edge contact, while at high doping concentrations, the edge contact exhibits lower resistance.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
DOI: 10.23919/SISPAD57422.2023.10319537
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“Binding of remote and spatial separated D- centers in double barrier resonant tunneling semiconductor devices”. Marmorkos IK, Schweigert VA, Peeters FM, Lok JGS, , 2769 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Charged-impurity correlations in a δ-doped quantum barrier”. Koenraad PM, Shi JM, van de Stadt AFW, Smets A, Perenboom JAAJ, Peeters FM, Devreese JT, Wolter JH, , 2351 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Charged-impurity correlations in Si ?-doped GaAs”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, , 2351 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“The classical electron gas in artificial structures”. Peeters FM, Partoens B, Kong M, , 235 (2004)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Correlation between a remote electron and a two-dimensional electron gas in resonant tunneling devices”. Kato H, Peeters FM, , 843 (2001)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“A cyclotron resonance study of the resonant polaron coupling in CdTe/CdMgTe quantum wells”. Chang CC, Michels JG, Cheng HH, Nicholas RJ, Peeters FM, Wu XG, Ossau W, Waag A, Landwehr G, , 383 (1997)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Destruction of magnetophonon resonance in high mobility heterojunctions from competition between elastic and inelastic scattering”. Xu W, Leadley DR, Peeters FM, Devreese JT, Nicholas RJ, Harris JJ, Foxon CT, Proceedings of the International Conference on the Physics of Semiconductors 22, 839 (1994)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Devices consisting of hybrid systems: ferro-magnetic and superconducting disks on top of a heterojunction”. Peeters FM, Li XQ, Matulis A, , 253 (1997)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“The effect of chemical composition on enthalpy and entropy changes of martensitic transformations in binary NiTi shape memory alloys”. Khalil-Allafi J, Amin-Ahmadi B, Journal Of Alloys And Compounds 487Proceedings of the 22nd International Conference on the Physics of Semiconductors, 363 (2009). http://doi.org/10.1016/j.jallcom.2009.07.135
Abstract: In the present research work the binary NiTi alloys with various compositions in the range of 50.351 at.% Ni were used. Samples have been annealed at 850 °C for 15 min and then quenched in water. In order to characterize transformation temperatures and enthalpy changes of the forward and the reverse martensitic transformation, Differential Scanning Calorimetric (DSC) experiments were performed. The enthalpy and entropy changes as a function of Ni atomic content have been thermodynamically investigated. Results show that enthalpy and entropy changes of martensitic transformation decrease when Ni atomic content increases. The variation of enthalpy and entropy of martensitic transformation with Ni content in binary NiTi alloys were explained by thermodynamic parameters and electron concentration of alloy (e/a) respectively.
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
Impact Factor: 3.133
Times cited: 30
DOI: 10.1016/j.jallcom.2009.07.135
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“Effects of confinement in strongly-coupled superlattices on impurity bound magneto-polarons”. Shi JM, Peeters FM, Devreese JT, Cheng J-P, Kono J, McCombe BD, Proceedings of the International Conference on the Physics of Semiconductors 22, 2267 (1994)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Effects of DX centers on electronic structure of a ?-doped quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, , 2355 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Effects of the DX centers on electronic structure of a δ-doped quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, , 2355 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Electron correlation effects in quantum dots”. Matulis A, Peeters FM, , 1875 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Electron mobility in Si delta-doped GaAs”. Hai GQ, Studart N, Peeters FM, Devreese JT, Koenraad PM, van de Stadt AFW, Wolter JH, Proceedings of the International Conference on the Physics of Semiconductors 22, 823 (1994)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“High field magnetotransport in a Ga0.8In0.2As quantum well with a parallel δ-layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, van Hove M, Borghs G, , 588 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Magnetic-field-induced metal-insulator transition in GaAs/AlGaAs quantum wells and superlattices”. Hilber W, Helm M, Hauke W, Peeters FM, Alavi K, Pathak RN, , 196 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Magnetic freeze-out induced transition from three- to two-dimensional magnetotransport in Si-δ-doped InSb layers grown on GaAs”. Bogaerts R, de Keyser A, van Bockstal L, Herlach F, Karavolas VC, Peeters FM, Borghs G, , 706 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Magneto-optical spectrum of a quantum dot”. Geerinckx F, Peeters FM, Wen X, Devreese JT, (1991)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Measuring quantum Hall resistors in pulsed magnetic fields”. van der Burgt M, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, Foxon CT, , 750 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Melting of a quantum Wigner crystal in bi-layer structures”. Goldoni G, Peeters FM, , 2451 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Modification of the 2D electronic properties in Si-δ-doped InSb due to surface effects”. de Keyser A, Bogaerts R, van Bockstal L, Herlach F, Karavolas VC, Peeters FM, van de Graaf W, Borghs G, , 383 (1997)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Optically detected magnetophonon resonance in GaAs-GaAlAs heterojunctions”. Barnes DJ, Nicholas RJ, Watts M, Peeters FM, Wu XG, Devreese JT, Langerak CJ, Singleton J, Harris JJ, Foxon CT, (1991)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Precision magnetometry on a submicron scale”. Geim AK, Lok JGS, Maan JC, Dubonos SV, Li XQ, Peeters FM, Nazarov YV, , 3311 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Quantum oscillations in the Hall effect of thin Sc1-xErxAs epitaxial layers burried in GaAs”. Bogaerts R, de Keyser A, Herlach F, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, , 596 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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