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“Transmission electron microscopy and Monte Carlo simulations of ordering in Au-Cu clusters produced in a laser vaporization source”. Pauwels B, Van Tendeloo G, Zhurkin E, Hou M, Verschoren G, Kuhn LT, Bouwen W, Lievens P, Physical review : B : condensed matter and materials physics 63, 165406 (2001). http://doi.org/10.1103/PhysRevB.63.165406
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 64
DOI: 10.1103/PhysRevB.63.165406
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“Resistance effects due to magnetic guiding orbits”. Reijniers J, Peeters FM, Physical review : B : condensed matter and materials physics 63, 165317 (2001). http://doi.org/10.1103/PhysRevB.63.165317
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.63.165317
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“Bright to dark exciton transition in symmetric coupled quantum wells”. Chang K, Peeters FM, Physical review : B : condensed matter and materials physics 63 (2001). http://doi.org/10.1103/PhysRevB.63.153307
Abstract: The energy dispersion of an exciton in a coupled quantum well is modified by an external in-plane magnetic field. We find that the in-plane magnetic field can shift the ground state of the magnetoexciton from a zero in-plane center-of-mass (CM) momentum to a finite CM momentum, and render the ground state of the magnetoexciton stable against radiative recombination due to momentum conservation. At the same time, a spatial separation of the electron and hole is realized. Thus an in-plane magnetic field can be used to tailor the radiative properties of excitons in coupled quantum wells.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 42
DOI: 10.1103/PhysRevB.63.153307
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“Saddle point states and energy barriers for vortex entrance and exit in superconducting disks and rings”. Baelus BJ, Peeters FM, Schweigert VA, Physical review : B : condensed matter and materials physics 63, 144517 (2001). http://doi.org/10.1103/PhysRevB.63.144517
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 86
DOI: 10.1103/PhysRevB.63.144517
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“The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Materials science in semiconductor processing 4, 117 (2001). http://doi.org/10.1016/S1369-8001(00)00110-4
Abstract: Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
Times cited: 6
DOI: 10.1016/S1369-8001(00)00110-4
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“Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy”. Hens S, van Landuyt J, Bender H, Boullart W, Vanhaelemeersch S, Materials science in semiconductor processing 4, 109 (2001). http://doi.org/10.1016/S1369-8001(00)00147-5
Abstract: The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
DOI: 10.1016/S1369-8001(00)00147-5
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“Magnetic field dependence of the energy of negatively charged excitons in semiconductor quantum wells”. Riva C, Peeters FM, Varga K, Physical review : B : condensed matter and materials physics 63, 115302 (2001). http://doi.org/10.1103/PhysRevB.63.115302
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 100
DOI: 10.1103/PhysRevB.63.115302
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“In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates”. Ghica C, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of materials research 16, 701 (2001). http://doi.org/10.1557/JMR.2001.0121
Abstract: The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
Times cited: 4
DOI: 10.1557/JMR.2001.0121
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“Microscopic theory of quadrupolar oredring in TmTe”. Nikolaev AV, Michel KH, Physical review : B : condensed matter and materials physics 63, 1 (2001). http://doi.org/10.1103/PhysRevB.63.104105
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 7
DOI: 10.1103/PhysRevB.63.104105
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“Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Institute of physics conference series
T2 –, Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND , 495 (1999)
Abstract: In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization”. Romano-Rodriguez A, Perez-Rodriguez A, Serre C, van Landuyt J, et al, Materials science forum
T2 –, International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA 338-3, 309 (2000)
Abstract: In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
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“Structural transformation in fluorinated LaACuGaO5 (A=Ca, Sr) brownmillerites”. Hadermann J, Van Tendeloo G, Abakumov AM, Pavlyuk BP, Rozova MG, Antipov EV, International journal of inorganic materials 2, 493 (2000). http://doi.org/10.1016/S1466-6049(00)00072-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 13
DOI: 10.1016/S1466-6049(00)00072-6
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“Atomic structure of alloys close to phase transitions”. Van Tendeloo G, Schryvers D, Nucleation and growth processes in materials 580, 283 (2000)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Chemical, structural and electrical characterizations in the BIZNVOX family”. Vernochet C, Vannier R-N, Huvé, M, Pirovano C, Nowogrocki G, Mairesse G, Van Tendeloo G, Journal of materials chemistry 10, 2811 (2000). http://doi.org/10.1039/b006157n
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 13
DOI: 10.1039/b006157n
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“Comparative Hall studies in the electron- and hole-doped manganites La0.33Ca0.67MnO3 and La0.70Ca0.30MnO3”. Gordon I, Wagner P, Das A, Vanacken J, Moshchalkov VV, Bruynseraede Y, Schuddinck W, Van Tendeloo G, Ziese M, Borghs G, Physical review : B : condensed matter and materials physics 62, 11633 (2000). http://doi.org/10.1103/PhysRevB.62.11633
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 18
DOI: 10.1103/PhysRevB.62.11633
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“Low-energy-deposited Au clusters investigated by high-resolution electron microscopy and molecular dynamics simulations”. Pauwels B, Van Tendeloo G, Bouwen W, Kuhn LT, Lievens P, Lei H, Hou M, Physical review : B : condensed matter and materials physics 62, 10383 (2000). http://doi.org/10.1103/PhysRevB.62.10383
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 88
DOI: 10.1103/PhysRevB.62.10383
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“Vortex styructure of thin mesoscopic disks with enhanced superconductivity”. Yampolskii SV, Peeters FM, Physical review : B : condensed matter and materials physics 62, 9663 (2000). http://doi.org/10.1103/PhysRevB.62.9663
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 61
DOI: 10.1103/PhysRevB.62.9663
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“Fine structure of excitons in a quantum well in the presence of a non-homogeneous magnetic field”. Freire JAK, Matulis A, Peeters FM, Freire VN, Farias GA, Physical review : B : condensed matter and materials physics 62, 7316 (2000). http://doi.org/10.1103/PhysRevB.62.7316
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 14
DOI: 10.1103/PhysRevB.62.7316
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“Magnetoresistance of a two-dimensional electron gas in weakly modulated magnetic fields”. Matulis A, Peeters FM, Physical review : B : condensed matter and materials physics 62, 91 (2000). http://doi.org/10.1103/PhysRevB.62.91
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PhysRevB.62.91
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“Microstructural characterization of diamond films deposited on c-BN crystals”. Nistor L, Buschmann V, Ralchenko V, Dinca G, Vlasov I, van Landuyt J, Fuess H, Diamond and related materials
T2 –, 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC 9, 269 (2000). http://doi.org/10.1016/S0925-9635(99)00246-0
Abstract: The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 9
DOI: 10.1016/S0925-9635(99)00246-0
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“Excitons and charged excitons in semiconductor quantum wells”. Riva C, Peeters FM, Varga K, Physical review : B : condensed matter and materials physics 61, 13873 (2000). http://doi.org/10.1103/PhysRevB.61.13873
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 120
DOI: 10.1103/PhysRevB.61.13873
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“Structural and magnetotransport transitions in the electron-doped Pr1-xSrxMnO3(0.85\leq x\leq1) manganites”. Hervieu M, Martin C, Maignan A, Van Tendeloo G, Jirak Z, Hejtmanek J, Barnabe A, Thopart D, Raveau B, Chemistry and materials 12, 1456 (2000). http://doi.org/10.1021/cm000016o
Abstract: The exploration of the Mn4+-rich side of the Pr1-xSrxMnO3 system has allowed the extension of the domain of the cubic perovskite, by using a two-step process, combining synthesis under Ar flow at high temperature and O-2 pressure annealing at lower temperature. We show that these Pr-doped cubic perovskites exhibit a coupled structural (cubic-tetragonal) and magnetic (para-antiferro) transition connected with a resistivity jump at the same temperature. The strong interplay between lattice, charges, and spins for these oxides results from the appearance at low temperature of the distorted C-type antiferromagnetic structure. The Pr1-xSrxMnO3 magnetic phase diagram shows, for 0.9 less than or equal to x less than or equal to 1 (i.e., on the Mn4+-rich side), the existence at low temperature of C- and G-type antiferromagnetism. The absence of ferromagnetic-antiferromagnetic competition explains that magnetoresistante properties are not observed in this system, in contrast to Mn4+-rich Ln(1-x)Ca(x)MnO(3) systems.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 24
DOI: 10.1021/cm000016o
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“In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Mironov OA, Parker EHC, Physical review : B : condensed matter and materials physics 61, 10336 (2000). http://doi.org/10.1103/PhysRevB.61.10336
Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.61.10336
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“Structural and magnetic properties of the colossal magnetoresistance perovskite La0.85Ca0.15MnO3”. Lobanov MV, Balagurov AM, Pomjakushin VJ, Fischer P, Gutmann M, Abakumov AM, D'yachenko OG, Antipov EV, Lebedev OI, Van Tendeloo G, Physical review : B : condensed matter and materials physics 61, 8941 (2000). http://doi.org/10.1103/PhysRevB.61.8941
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 47
DOI: 10.1103/PhysRevB.61.8941
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“Vortex states in superconducting rings”. Baelus BJ, Peeters FM, Schweigert VA, Physical review : B : condensed matter and materials physics 61, 9734 (2000). http://doi.org/10.1103/PhysRevB.61.9734
Abstract: The superconducting state. of a thin superconducting disk with a hole is studied within the, nonlinear Ginzburg-Landau theory in which the demagnetization effect is accurately taken into account. We find that the flux through the hole is not quantized, the superconducting state is stabilized with increasing size of the hole for fixed radius of the disk, and a transition to a multivortex state is found if the disk is sufficiently large. Breaking the circular symmetry through a non-central-location of the hole in the disk favors the multivortex state.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 78
DOI: 10.1103/PhysRevB.61.9734
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“Molecular information in static SIMS for the speciation of inorganic compounds”. van Ham R, Adriaens A, van Vaeck L, Gijbels R, Adams F, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms 161/163, 245 (2000). http://doi.org/10.1016/S0168-583X(99)00750-8
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.109
Times cited: 19
DOI: 10.1016/S0168-583X(99)00750-8
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“Relation between structure, charge ordering and magnetotransport properties in Nd0.5Ca0.5Mn1-xCrxO3 manganites”. Schuddinck W, Van Tendeloo G, Barnabé, A, Hervieu M, Raveau B, Journal of magnetism and magnetic materials
T2 –, Symposium G Material Physics Issues and Applications of Magnetic Oxides, at the E-MRS Spring Meeting, JUN 01-04, 1999, Strasbourg, France 211, 105 (2000). http://doi.org/10.1016/S0304-8853(99)00720-9
Abstract: The relationships between incommensurability, charge ordering and magnetotransport properties in Nd0.5Ca0.5Mn1-xCrxO3 manganites have been studied by electron diffraction and lattice imaging versus temperature with 0.02 less than or equal to x less than or equal to 0.07. All compositions show an incommensurate superstructure over the whole temperature domain, despite the fact that they are ferromagnetic and conductive below 140 K, The q-vector (1/2 – delta)a* decreases with increasing temperature for all compositions x. For a given temperature q also decreases with x. Lattice images obtained at low temperature give a clear view of the characteristics of the incommensurate structure. They also provide a better understanding of the charge ordering process. The low-temperature form of the Cr-doped manganites is not a perfectly doubled cell [[2a(p)root 2 x 2a(p) x a(p)root 2]], but defects inducing a tripled cell occur pseudo-periodically. (C) 2000 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.63
Times cited: 16
DOI: 10.1016/S0304-8853(99)00720-9
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“Atomic and microstructure of CMR materials”. Van Tendeloo G, Lebedev OI, Amelinckx S, Journal of magnetism and magnetic materials 211, 73 (2000). http://doi.org/10.1016/S0304-8853(99)00716-7
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.63
Times cited: 48
DOI: 10.1016/S0304-8853(99)00716-7
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“Confinement of two-dimensional excitons in a non-homogeneous magnetic field”. Freire JAK, Matulis A, Peeters FM, Freire VN, Farias GA, Physical review : B : condensed matter and materials physics 61, 2895 (2000). http://doi.org/10.1103/PhysRevB.61.2895
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 22
DOI: 10.1103/PhysRevB.61.2895
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“Optically detected magnetophonon resonance in polar semiconductors GaAs”. Hai GQ, Peeters FM, Physical review : B : condensed matter and materials physics 60, 16513 (1999). http://doi.org/10.1103/PhysRevB.60.16513
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 24
DOI: 10.1103/PhysRevB.60.16513
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