“Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures”. Gkanatsiou A, Lioutas CB, Frangis N, Polychroniadis EK, Prystawko P, Leszczynski M, Altantzis T, Van Tendeloo G, Materials science in semiconductor processing 91, 159 (2019). http://doi.org/10.1016/j.mssp.2018.11.008
Abstract: AlGaN/GaN heterostructures were grown on “on-axis” and 2° off (0001) 4H-SiC substrates by metalorganic vapor phase epitaxy (MOVPE). Structural characterization was performed by transmission electron microscopy. The dislocation density, being greater in the on-axis case, is gradually reduced in the GaN layer and is forming
dislocation loops in the lower region. Steps aligned along [11̅00] in the off-axis case give rise to simultaneous defect formation. In the on-axis case, an almost zero density of steps is observed, with the main origin of defects probably being the orientation mismatch at the grain boundaries between the small not fully coalesced AlN grains. V-shaped formations are observed in the AlN nucleation layer, but are more frequent in the off-axis case, probably enhanced by the presence of steps. These V-shaped formations are completely overgrown by the GaN layer, during the subsequent deposition, presenting AlGaN areas in the walls of the defect, indicating an interdiffusion between the layers. Finally, at the AlGaN/GaN heterostructure surface in the on-axis case, V-shapes are observed, with the AlN spacer and AlGaN (21% Al) thickness on relaxed GaN exceeding the critical thickness for relaxation. On the other hand, no relaxation in the form of V-shape creation is observed in the off-axis case, probably due to the smaller AlGaN thickness (less than 21% Al). The AlN spacer layer, grown in between the heterostructure, presents a uniform thickness and clear interfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
Times cited: 1
DOI: 10.1016/j.mssp.2018.11.008
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“Enhanced electrochemical performance of Li-rich cathode materials through microstructural control”. Serrano-Sevillano J, Reynaud M, Saracibar A, Altantzis T, Bals S, van Tendeloo G, Casas-Cabanas M, Physical chemistry, chemical physics 20, 23112 (2018). http://doi.org/10.1039/C8CP04181D
Abstract: The microstructural complexity of Li-rich cathode materials has so far hampered understanding the critical link between size, morphology and structural defects with both capacity and voltage fadings that this family of materials exhibits. Li2MnO3 is used here as a model material to extract reliable structure–property
relationships that can be further exploited for the development of high-performing and long-lasting Li-rich oxides. A series of samples with microstructural variability have been prepared and thoroughly characterized using the FAULTS software, which allows quantification of planar defects and extraction of
average crystallite sizes. Together with transmission electron microscopy (TEM) and density functional theory (DFT) results, the successful application of FAULTS analysis to Li2MnO3 has allowed rationalizing the synthesis conditions and identifying the individual impact of concurrent microstructural features on
both voltage and capacity fadings, a necessary step for the development of high-capacity Li-ion cathode materials with enhanced cycle life.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.123
Times cited: 36
DOI: 10.1039/C8CP04181D
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“Self‐Assembly of Atomically Thin Chiral Copper Heterostructures Templated by Black Phosphorus”. Nerl HC, Pokle A, Jones L, Müller‐Caspary K, Bos KHW, Downing C, McCarthy EK, Gauquelin N, Ramasse QM, Lobato I, Daly D, Idrobo JC, Van Aert S, Van Tendeloo G, Sanvito S, Coleman JN, Cucinotta CS, Nicolosi V, Advanced functional materials 29, 1903120 (2019). http://doi.org/10.1002/adfm.201903120
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 1
DOI: 10.1002/adfm.201903120
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“YBa2Cu3O7−xfilms with Ba2Y(Nb,Ta)O6nanoinclusions for high-field applications”. Celentano G, Rizzo F, Augieri A, Mancini A, Pinto V, Rufoloni A, Vannozzi A, MacManus-Driscoll JL, Feighan J, Kursumovic A, Meledin A, Mayer J, Van Tendeloo G, Superconductor Science &, Technology 33, 044010 (2020). http://doi.org/10.1088/1361-6668/ab6ee5
Abstract: The structural and transport properties of YBa2Cu3O7−x films grown by pulsed laser deposition with mixed 2.5 mol% Ba2YTaO6 (BYTO) and 2.5 mol% Ba2YNbO6 (BYNO) double-perovskite secondary phases are investigated in an extended film growth rate, R = 0.02–1.8 nm s−1. The effect of R on the film microstructure analyzed by TEM techniques shows an evolution from sparse and straight to denser, thinner and splayed continuous columns, with mixed BYNO + BYTO (BYNTO) composition, as R increases from 0.02 nm s−1 to 1.2 nm s−1. This microstructure results in very efficient flux pinning at 77 K, leading to a remarkable improvement in the critical current density (J c) behaviour, with the maximum pinning force density F p(Max) = 13.5 GN m−3 and the irreversibility field in excess of 11 T. In this range, the magnetic field values at which the F p is maximized varies from 1 T to 5 T, being related to the BYNTO columnar density. The film deposited when R = 0.3 nm s−1 exhibits the best performances over the whole temperature and magnetic field ranges, achieving F p(Max) = 900 GN m−3 at 10 K and 12 T. At higher rates, R > 1.2 nm s−1, BYNTO columns show a meandering nature and are prone to form short nanorods. In addition, in the YBCO film matrix a more disordered structure with a high density of short stacking faults is observed. From the analysis of the F p(H, T) curves it emerges that in films deposited at the high R limit, the vortex pinning is no longer dominated by BYNTO columnar defects, but by a new mechanism showing the typical temperature scaling law. Even though this microstructure produces a limited improvement at 77 K, it exhibits a strong J c improvement at lower temperature with F p = 700 GN m−3 at 10 K, 12 T and 900 GN m−3 at 4.2 K, 18 T.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.6
DOI: 10.1088/1361-6668/ab6ee5
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“Grain boundaries as a diffusion-limiting factor in lithium-rich NMC cathodes for high-energy lithium-ion batteries”. Abakumov AM, Li C, Boev A, Aksyonov DA, Savina AA, Abakumova TA, Van Tendeloo G, Bals S, ACS applied energy materials 4, 6777 (2021). http://doi.org/10.1021/ACSAEM.1C00872
Abstract: High-energy lithium-rich layered transition metal oxides are capable of delivering record electrochemical capacity and energy density as positive electrodes for Li-ion batteries. Their electrochemical behavior is extremely complex due to sophisticated interplay between crystal structure, electronic structure, and defect structure. Here we unravel an extra level of this complexity by revealing that the most typical representative Li1.2Ni0.13Mn0.54Co0.13O2 material, prepared by a conventional coprecipitation technique with Na2CO3 as a precipitating agent, contains abundant coherent (001) grain boundaries with a Na-enriched P2-structured block due to segregation of the residual sodium traces. The trigonal prismatic oxygen coordination of Na triggers multiple nanoscale twinning, giving rise to incoherent (104) boundaries. The cationic layers at the (001) grain boundaries are filled with transition metal cations being Mn-depleted and Co-enriched; this makes them virtually not permeable for the Li+ cations, and therefore they negatively influence the Li diffusion in and out of the spherical agglomerates. These results demonstrate that besides the mechanisms intrinsic to the crystal and electronic structure of Li-rich cathodes, their rate capability might also be depreciated by peculiar microstructural aspects. Dedicated engineering of grain boundaries opens a way for improving inherently sluggish kinetics of these materials.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Times cited: 4
DOI: 10.1021/ACSAEM.1C00872
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“Unusual structural rearrangement and superconductivity in infinite layer cuprate superlattices”. Samal D, Gauquelin N, Takamura Y, Lobato I, Arenholz E, Van Aert S, Huijben M, Zhong Z, Verbeeck J, Van Tendeloo G, Koster G, Physical review materials 7, 054803 (2023). http://doi.org/10.1103/PhysRevMaterials.7.054803
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
DOI: 10.1103/PhysRevMaterials.7.054803
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