| Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. |
The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study |
1997 |
Journal of crystal growth |
181 |
9 |
UA library record; WoS full record; WoS citing articles |
