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Author Title Year (down) Publication Volume Times cited Additional Links
Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study 1997 Journal of crystal growth 181 9 UA library record; WoS full record; WoS citing articles