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“Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure”. Schowalter M, Rosenauer A, Titantah JT, Lamoen D, Acta crystallographica: section A: foundations of crystallography 65, 227 (2009). http://doi.org/10.1107/S0108767309004966 Abstract: We computed Debye-Waller factors in the temperature range from 0.1 to 1000 K for AlN, GaN, InN, ZnO and CdO with the wurtzite-type structure. The Debye-Waller factors were derived from phonon densities of states obtained from Hellmann-Feynman forces computed within the density-functional-theory formalism. The temperature dependences of the Debye-Waller factors were fitted and fit parameters are given. Keywords: A1 Journal article; Electron microscopy for materials research (EMAT) Impact Factor: 5.725 Times cited: 23 DOI: 10.1107/S0108767309004966 Additional Links: UA library record; WoS full record; WoS citing articles show.php?record=3497

Abstract: We computed Debye-Waller factors in the temperature range from 0.1 to 1000 K for AlN, GaN, InN, ZnO and CdO with the wurtzite-type structure. The Debye-Waller factors were derived from phonon densities of states obtained from Hellmann-Feynman forces computed within the density-functional-theory formalism. The temperature dependences of the Debye-Waller factors were fitted and fit parameters are given.

Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)

Impact Factor: 5.725

Times cited: 23

DOI: 10.1107/S0108767309004966

Additional Links: UA library record; WoS full record; WoS citing articles

show.php?record=3497