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| Record | |||||
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| Author | Slachmuylders, A.F.; Partoens, B.; Magnus, W.; Peeters, F.M. | ||||
| Title | Neutral shallow donors near a metallic interface | Type | A1 Journal article | ||
Year  |
2009 | Publication | Microelectronics journal | Abbreviated Journal | Microelectron J |
| Volume | 40 | Issue | 4/5 | Pages | 753-755 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | The effect of a metallic gate on the bound states of a shallow donor located near the gate is studied. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anti-crossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Luton | Editor | ||
| Language | Wos | 000265870200024 | Publication Date | 2009-02-04 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0026-2692; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 1.163 | Times cited | 1 | Open Access | |
| Notes | Approved | Most recent IF: 1.163; 2009 IF: 0.778 | |||
| Call Number | UA @ lucian @ c:irua:77029 | Serial | 2296 | ||
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