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| Author | van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.; Germain, M. | ||||
| Title | The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN | Type | A1 Journal article | ||
Year  |
2005 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 87 | Issue | 6 | Pages | 061905,1-3 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000231016900019 | Publication Date | 2005-08-02 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.411 | Times cited | 57 | Open Access | |
| Notes | Approved | Most recent IF: 3.411; 2005 IF: 4.127 | |||
| Call Number | UA @ lucian @ c:irua:54808 | Serial | 2910 | ||
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