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Author de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C.
Title Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy Type A1 Journal article
Year (down) 2004 Publication Journal of the electrochemical society Abbreviated Journal J Electrochem Soc
Volume 151 Issue 9 Pages G598-G605
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Infrared absorption spectra of oxygen precipitates in boron-doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function representation of composite materials. The aspect ratio of the platelet precipitates is determined by transmission electron microscopy measurements. The analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOγ precipitates are formed with the same composition as in the lightly doped case. In the heavily boron-doped (>10(18) cm(-3)) samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3, with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. (C) 2004 The Electrochemical Society.
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Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000223622000072 Publication Date 2004-08-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0013-4651; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.259 Times cited 13 Open Access
Notes Fwo; Iuap P5/01 Approved Most recent IF: 3.259; 2004 IF: 2.356
Call Number UA @ lucian @ c:irua:103760 Serial 330
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