| Records |
| Author |
Li, B.; Partoens, B.; Peeters, F.M.; Magnus, W. |
| Title |
Dielectric mismatch effect on coupled impurity states in a freestanding nanowire |
Type |
A1 Journal article |
Year  |
2009 |
Publication |
Microelectronics journal |
Abbreviated Journal |
Microelectron J |
| Volume |
40 |
Issue |
3 |
Pages |
446-448 |
| Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| Abstract |
We studied the coupled impurity states in a freestanding semiconductor nanowire (NW), within the effective mass approximation and including the effect of the dielectric mismatch, by using finite element method. Bonding and anti-bonding states are found and their energies converge with increasing distance di between the two impurities. The dependence of the binding energy on the wire radius R and the distance di between the two impurities is investigated, and we compare it with the result of a freestanding NW that contains a single impurity. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
|
Place of Publication |
Luton |
Editor |
|
| Language |
|
Wos |
000264694700017 |
Publication Date |
2008-07-30 |
| Series Editor |
|
Series Title |
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Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0026-2692; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
1.163 |
Times cited |
4 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 1.163; 2009 IF: 0.778 |
| Call Number |
UA @ lucian @ c:irua:76410 |
Serial |
690 |
| Permanent link to this record |
| |
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| |
| Author |
Li, B.; Partoens, B.; Peeters, F.M.; Magnus, W. |
| Title |
Dielectric mismatch effect on coupled shallow impurity states in a semiconductor nanowire |
Type |
A1 Journal article |
| Year |
2009 |
Publication |
Physical review : B : solid state |
Abbreviated Journal |
Phys Rev B |
| Volume |
79 |
Issue |
8 |
Pages |
085306,1-085306,7 |
| Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| Abstract |
Coupled shallow impurity states in a freestanding semiconductor nanowire and in a semiconductor nanowire surrounded by a metallic gate are studied within the effective-mass approximation. Bonding and antibonding states are found due to the coupling of the two impurities, and their energy converges with increasing distance di between the two impurities. The dependences of the binding energy on the wire radius R, the distance di between the two impurities, and the impurity radial position in the nanowire are examined. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
|
Place of Publication |
Lancaster, Pa |
Editor |
|
| Language |
|
Wos |
000263816000051 |
Publication Date |
2009-02-09 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1098-0121;1550-235X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
3.836 |
Times cited |
11 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 3.836; 2009 IF: 3.475 |
| Call Number |
UA @ lucian @ c:irua:76223 |
Serial |
691 |
| Permanent link to this record |
