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“The Dirichlet problem for the Laplace equation in supershaped annuli”. Caratelli D, Gielis J, Tavkhelidze I, Ricci PE, Boundary value problems , 113 (2013). http://doi.org/10.1186/1687-2770-2013-113
Abstract: The Dirichlet problem for the Laplace equation in normal-polar annuli is addressed by using a suitable Fourier-like technique. Attention is in particular focused on the wide class of domains whose boundaries are defined by the so-called superformula introduced by Gielis. A dedicated numerical procedure based on the computer algebra system Mathematica© is developed in order to validate the proposed methodology. In this way, highly accurate approximations of the solution, featuring properties similar to the classical ones, are obtained.
Keywords: A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
DOI: 10.1186/1687-2770-2013-113
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“Spherical harmonic solution of the Robin problem for the Helmholtz equation in a supershaped shell”. Caratelli D, Gielis J, Tavkhelidze I, Ricci PE, Applied mathematics 4, 263 (2013). http://doi.org/10.4236/AM.2013.41A040
Abstract: The Robin problem for the Helmholtz equation in normal-polar shells is addressed by using a suitable spherical harmonic expansion technique. Attention is in particular focused on the wide class of domains whose boundaries are defined by a generalized version of the so-called superformula introduced by Gielis. A dedicated numerical procedure based on the computer algebra system Mathematica? is developed in order to validate the proposed methodology. In this way, highly accurate approximations of the solution, featuring properties similar to the classical ones, are obtained.
Keywords: A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
DOI: 10.4236/AM.2013.41A040
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“Bulky knots and links generated by cutting generalized Mobius-Listing bodies and applications in the natural sciences”. Gielis J, Caratelli D, Tavkelidze I, Fougerolle Y, Ricci PE, Gerats T page 167 (2013).
Keywords: H2 Book chapter; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
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“Some properties of “bulky&rdquo, links, generated by Generalized Möbius Listing's bodies GML4n”. Caratelli D, Gielis J, Ricci PE, Tavkhelidze I, (2013)
Keywords: P3 Proceeding; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
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“Electromagnetic characterization of supershaped lens antennas for high-frequency applications”. Bia P, Caratelli D, Mescia L, Gielis J page 1679 (2013).
Keywords: H1 Book chapter; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
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“Universal natural shapes : from unifying shape description to simple methods for shape analysis and boundary value problems”. Gielis J, Caratelli D, Fougerolle Y, Ricci PE, Tavkelidze I, Gerats T, PLoS ONE 7, e29324 (2012). http://doi.org/10.1371/JOURNAL.PONE.0029324
Abstract: Gielis curves and surfaces can describe a wide range of natural shapes and they have been used in various studies in biology and physics as descriptive tool. This has stimulated the generalization of widely used computational methods. Here we show that proper normalization of the Levenberg-Marquardt algorithm allows for efficient and robust reconstruction of Gielis curves, including self-intersecting and asymmetric curves, without increasing the overall complexity of the algorithm. Then, we show how complex curves of k-type can be constructed and how solutions to the Dirichlet problem for the Laplace equation on these complex domains can be derived using a semi-Fourier method. In all three methods, descriptive and computational power and efficiency is obtained in a surprisingly simple way.
Keywords: A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
DOI: 10.1371/JOURNAL.PONE.0029324
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“Optimization of gate-on-source-only tunnel FETs with counter-doped pockets”. Kao K-H, Verhulst AS, Vandenberghe WG, Sorée B, Magnus W, Leonelli D, Groeseneken G, De Meyer K, IEEE transactions on electron devices 59, 2070 (2012). http://doi.org/10.1109/TED.2012.2200489
Abstract: We investigate a promising tunnel FET configuration having a gate on the source only, which is simultaneously exhibiting a steeper subthreshold slope and a higher ON-current than the lateral tunneling configuration with a gate on the channel. Our analysis is performed based on a recently developed 2-D quantum-mechanical simulator calculating band-to-band tunneling and including quantum confinement (QC). It is shown that the two disadvantages of the structure, namely, the sensitivity to gate alignment and the physical oxide thickness, are mitigated by placing a counter-doped parallel pocket underneath the gate-source overlap. The pocket also significantly reduces the field-induced QC. The findings are illustrated with all-Si and all-Ge gate-on-source-only tunnel field-effect transistor simulations.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.605
Times cited: 72
DOI: 10.1109/TED.2012.2200489
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“The Robin problem for the Helmholtz equation in a starlike planar domain”. Caratelli D, Gielis J, Natalini P, Ricci PE, Tavkhelidze I, Georgian mathematical journal 18, 465 (2011). http://doi.org/10.1515/GMJ.2011.0031
Abstract: The interior and exterior Robin problems for the Helmholtz equation in starlike planar domains are addressed by using a suitable Fourier-like technique. Attention is in particular focused on normal-polar domains whose boundaries are defined by the so-called superformula introduced by J. Gielis. A dedicated numerical procedure based on the computer algebra system Mathematica© is developed in order to validate the proposed approach. In this way, highly accurate approximations of the solution, featuring properties similar to the classical ones, are obtained. The computed results are found to be in good agreement with the theoretical findings on Fourier series expansion presented by L. Carleson.
Keywords: A1 Journal article; Sustainable Energy, Air and Water Technology (DuEL)
DOI: 10.1515/GMJ.2011.0031
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“Unexpected optical response of single ZnO nanowires probed using controllable electrical contacts”. Zeng YI, Menghini M, Li DY, Lin SS, Ye ZZ, Hadermann J, Moorkens T, Seo JW, Locquet J-P, van Haesendonck C, Physical chemistry, chemical physics 13, 6931 (2011). http://doi.org/10.1039/c1cp00012h
Abstract: Relying on combined electron-beam lithography and lift-off methods Au/Ti bilayer electrical contacts were attached to individual ZnO nanowires (NWs) that were grown by a vapor phase deposition method. Reliable Schottky-type as well as ohmic contacts were obtained depending on whether or not an ion milling process was used. The response of the ZnO NWs to ultraviolet light was found to be sensitive to the type of contacts. The intrinsic electronic properties of the ZnO NWs were studied in a field-effect transistor configuration. The transfer characteristics, including gate threshold voltage, hysteresis and operational mode, were demonstrated to unexpectedly respond to visible light. The origin of this effect could be accounted for by the presence of point defects in the ZnO NWs.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.123
Times cited: 7
DOI: 10.1039/c1cp00012h
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“Fourier-like solution of the Dirichlet problem for the Laplace Equation in k-type Gielis domains”. Caratelli D, Gielis J, Ricci PE, Journal of pure and applied mathematics : advances and applications 5, 99 (2011)
Abstract: The interior and exterior Dirichlet problems for the Laplace equation in k-type Gielis domains are analytically addressed by using a suitable Fourier-like technique. A dedicated numerical procedure based on the computer-aided algebra tool Mathematica© is developed in order to validate the proposed approach. In this way, highly accurate approximations of the solution, featuring properties similar to the classical ones, are obtained. Computed results are found to be in good agreement with theoretical findings on Fourier series expansion presented by Carleson.
Keywords: A1 Journal article; Sustainable Energy, Air and Water Technology (DuEL)
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“Combined use of synchrotron-radiation-based imaging techniques for the characterization of structured catalysts”. Basile F, Benito P, Bugani S, de Nolf W, Fornasari G, Janssens K, Morselli L, Scavetta E, Tonelli D, Vaccari A, Advanced functional materials 20, 4117 (2010). http://doi.org/10.1002/ADFM.201001004
Abstract: Active-phase-coated metallic supports as structured catalysts are gaining attention in endothermic and exothermic processes because they improve heat transfer. The deposition of a well-adhered and stable catalyst layer on the metallic support constitutes an important feature for the successful application of the final material. In this work, coating of FeCrAlY foams is performed by a one-step electrosynthesis-deposition of hydrotalcite-type compounds, precursors of catalysts active in endothermic steam methane reforming. The catalysts are studied at different length scales by using, for the first time, a combination of several techniques: SEM/EDS and X-ray fluorescence, X-ray powder diffraction and absorption-tomography experiments on the micro- and nanoscales at a synchrotron facility. The results show that the morphology of the coating depends on the synthesis conditions and that the catalyst may be described as Ni metal crystallites dispersed on γ-Al2O3, homogeneously coating the FeCrAlY foam.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 12.124
Times cited: 24
DOI: 10.1002/ADFM.201001004
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“Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor”. Verhulst A, Sorée B, Leonelli D, Vandenberghe WG, Groeseneken G, Journal Of Applied Physics 107, 024518 (2010). http://doi.org/10.1063/1.3277044
Abstract: Tunnel field-effect transistors (TFETs) are potential successors of metal-oxide-semiconductor FETs because scaling the supply voltage below 1 V is possible due to the absence of a subthreshold-swing limit of 60 mV/decade. The modeling of the TFET performance, however, is still preliminary. We have developed models allowing a direct comparison between the single-gate, double-gate, and gate-all-around configuration at high drain voltage, when the drain-voltage dependence is negligible, and we provide improved insight in the TFET physics. The dependence of the tunnel current on device parameters is analyzed, in particular, the scaling with gate-dielectric thickness, channel thickness, and dielectric constants of gate dielectric and channel material. We show that scaling the gate-dielectric thickness improves the TFET performance more than scaling the channel thickness and that improvements are often overestimated. There is qualitative agreement between our model and our experimental data.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.068
Times cited: 150
DOI: 10.1063/1.3277044
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