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“Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks”. de Witte H, Conard T, Vandervorst W, Gijbels R, Applied surface science 203, 523 (2003). http://doi.org/10.1016/S0169-4332(02)00728-6
Abstract: We analyzed ultra-thin ZrO2/SiO2/Si gate dielectrics under post-deposition anneals in dry O-2 at temperatures from 500 to 700 degreesC. TOF-SIMS profiling of ZrO2/SiO2/Si stacks is hampered by many sputter induced artifacts. The depletion of oxygen leads to a decrease in SIMS intensities. However, preferential sputtering is accompanied by transport of the depleted species towards the surface. Due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. Either normal or radiation-enhanced diffusion transports oxygen back to the surface. Simultaneously also segregation of zirconium towards and through the interface is observed, resulting in a large zirconium tail in the underlying silicon substrate. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.387
Times cited: 15
DOI: 10.1016/S0169-4332(02)00728-6
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“The microstructure and interfaces of intermediate layers in sapphire bicrystals”. Vasiliev AL, Stepantsov EA, Ivanov ZG, Verbist K, Van Tendeloo G, Olsson E, Applied surface science 119, 215 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.387
Times cited: 2
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“Photoelectric and electrical responses of several erbium silicide/silicon interfaces”. Muret P, Nguyen TTA, Frangis N, Van Tendeloo G, van Landuyt J, Applied surface science
T2 –, International Symposium on Si Heterostructures –, From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE 102, 173 (1996). http://doi.org/10.1016/0169-4332(96)00042-6
Abstract: In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 3
DOI: 10.1016/0169-4332(96)00042-6
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“High crystalline quality erbium silicide films on (100) silicon grown in high vacuum”. Kaltsas G, Travlos A, Nassiopoulos AG, Frangis N, van Landuyt J, Applied surface science 102, 151 (1996). http://doi.org/10.1016/0169-4332(96)00036-0
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 14
DOI: 10.1016/0169-4332(96)00036-0
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“Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Applied surface science 102, 163 (1996). http://doi.org/10.1016/0169-4332(96)00040-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 9
DOI: 10.1016/0169-4332(96)00040-2
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“Stability and dynamical properties of a double-layer Wigner crystal in two dimensions”. Goldoni G, Schweigert V, Peeters FM, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 163 (1996). http://doi.org/10.1016/0039-6028(96)00359-7
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 4
DOI: 10.1016/0039-6028(96)00359-7
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“Magneto-oscillations of the gate current in a laterally modulated two-dimensional electron gas”. Blom FAP, Peeters FM, van de Zanden K, van Hove M, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 851 (1996). http://doi.org/10.1016/0039-6028(96)00549-3
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 1
DOI: 10.1016/0039-6028(96)00549-3
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“Resonant tunnelling through D- states”. Lok JGS, Geim AK, Maan JC, Marmorkos I, Peeters FM, Mori N, Eaves L, McDonnell P, Henini M, Sakai JW, Main PC;, Surface science : a journal devoted to the physics and chemistry of interfaces
T2 –, 11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI), August 07-11, 1995, Univ. Nottingham, Nottingham, England 362, 247 (1996). http://doi.org/10.1016/0039-6028(96)00395-0
Abstract: We have studied tunnelling through Si donors incorporated in the quantum well of double barrier resonant tunnelling devices. In addition to a resonance associated with the ground state of a single donor (1s level), a novel donor-related resonance at a smaller binding energy is observed in high magnetic fields where it becomes dominant over the Is resonance. We attribute this novel feature to a D-minus state of a shallow donor.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
DOI: 10.1016/0039-6028(96)00395-0
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“Resonant bound bipolarons in a superlattice in a high magnetic field”. Shi JM, Peeters FM, Devreese JT, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 397 (1996). http://doi.org/10.1016/0039-6028(96)00430-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.925
DOI: 10.1016/0039-6028(96)00430-X
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“Electrons in a periodic magnetic field”. Ibrahim IS, Peeters FM, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 341 (1996). http://doi.org/10.1016/0039-6028(96)00417-7
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 3
DOI: 10.1016/0039-6028(96)00417-7
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“Resonant tunneling through D- states”. Lok JGS, Geim AK, Maan JC, Marmorkos I, Peeters FM, Mori N, Eaves L, McDonnell P, Henini M, Sakai JW, Main PC, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 247 (1996)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
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“Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals”. Goessens C, Schryvers D, van Landuyt J, Amelinckx S, de Keyzer R, Surface science : a journal devoted to the physics and chemistry of interfaces 337, 153 (1995). http://doi.org/10.1016/0039-6028(95)00000-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.925
Times cited: 10
DOI: 10.1016/0039-6028(95)00000-3
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“EM, XPS and LEED study of deposition of Ag on hydrogenated Si substrate prepared by wet chemical treatments”. Zhang XB, Vasiliev AL, Van Tendeloo G, He Y, Yu L-M, Thiry PA, Surface science : a journal devoted to the physics and chemistry of interfaces 340, 317 (1995). http://doi.org/10.1016/0039-6028(95)00699-0
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.925
Times cited: 11
DOI: 10.1016/0039-6028(95)00699-0
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“Coupled electron-hole transport: generalized random-phase approximation and density functional theory”. Tso HC, Vasilopoulos P, Peeters FM, Surface science : a journal devoted to the physics and chemistry of interfaces 305, 400 (1994). http://doi.org/10.1016/0039-6028(94)90925-3
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 5
DOI: 10.1016/0039-6028(94)90925-3
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“Transition energies of D- centers in a superlattice”. Shi JM, Peeters FM, Devreese JT, Surface science : a journal devoted to the physics and chemistry of interfaces 305, 220 (1994). http://doi.org/10.1016/0039-6028(94)90888-5
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.925
Times cited: 6
DOI: 10.1016/0039-6028(94)90888-5
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“Two-dimensional tunneling through magnetic barriers”. Matulis A, Peeters FM, Vasilopoulos P, Surface science : a journal devoted to the physics and chemistry of interfaces 305, 434 (1994). http://doi.org/10.1016/0039-6028(94)90931-8
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 2
DOI: 10.1016/0039-6028(94)90931-8
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“Disappearance of magnetophonon resonance at high magnetic fields in GaAs-GaAlAs heterojunctions”. Leadley DR, Nicholas RJ, Singleton J, Xu W, Peeters FM, Devreese JT, van Bockstal L, Herlach F, Perenboom JAAJ, Harris JJ, Foxon CT, Surface science : a journal devoted to the physics and chemistry of interfaces 305, 327 (1994). http://doi.org/10.1016/0039-6028(94)90910-5
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.925
Times cited: 1
DOI: 10.1016/0039-6028(94)90910-5
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“Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry”. Vanhellemont J, Maes HE, Schaekers M, Armigliato A, Cerva H, Cullis A, de Sande J, Dinges H, Hallais J, Nayar V, Pickering C, Stehlé, JL, Van Landuyt J, Walker C, Werner H, Salieri P;, Applied surface science
T2 –, SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE 63, 45 (1993). http://doi.org/10.1016/0169-4332(93)90062-G
Abstract: The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 13
DOI: 10.1016/0169-4332(93)90062-G
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“Resonant magnetopolaron coupling to both polar and neutral optical phonons in the layer compound InSe”. Peeters FM, Wu XG, Devreese JT, Watts M, Nicholas RJ, Howell DF, van Bockstal L, Herlach F, Langerak CJGM, Singleton J, Chevy A, Surface science 263, 654 (1992). http://doi.org/10.1016/0039-6028(92)90429-A
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.925
Times cited: 4
DOI: 10.1016/0039-6028(92)90429-A
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“Infrared-spectroscopy of subbands, minibands, and donors in GaAs/AlGaAs superlattices”. Helm M, Peeters FM, de Rosa F, Colas E, Harbison JP, Florez LT, Surface science : a journal devoted to the physics and chemistry of interfaces
T2 –, 9TH INTERNATIONAL CONF ON THE ELECTRONIC PROPERTIES OF TWO-DIMENSIONAL, SYSTEMS ( EP2DS-9 ) / 5TH INTERNATIONAL CONF ON MODULATED SEMICONDUCTOR, STRUCTURES ( MSS-5 ), JUL 263, 518 (1992). http://doi.org/10.1016/0039-6028(92)90400-Z
Abstract: A far-infrared absorption study of electrons in lightly-doped GaAs/Al0.3Ga0.7As superlattices is presented. Both weakly and strongly coupled superlattices are investigated, and the difference between intersubband transitions and transitions between extended minibands is demonstrated. At low temperatures, the absorption spectra are dominated by donor transitions. The 1s-2p(z) transition, which is intimately related to the intersubband transition, is observed. All experimental data are compared to an envelope function calculation for the miniband structure and a variational calculation for the donor energies. Excellent agreement between experiment and theory is achieved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 5
DOI: 10.1016/0039-6028(92)90400-Z
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